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  • 1
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    Angiogenic sprouting into neural tissue requires Gpr124, an orphan G protein-coupled receptor [Developmental Biology] (2011)
    National Academy of Sciences
    Details
    Publication Date: 2011-02-16
    Description: The vasculature of the CNS is structurally and functionally distinct from that of other organ systems and is particularly prone to developmental abnormalities and hemorrhage. Although other embryonic tissues undergo primary vascularization, the developing nervous system is unique in that it is secondarily vascularized by sprouting angiogenesis from a surrounding perineural plexus. This sprouting angiogenesis requires the TGF-β and Wnt pathways because ablation of these pathways results in aberrant sprouting and hemorrhage. We have genetically deleted Gpr124, a member of the large family of long N-terminal group B G protein-coupled receptors, few members of which have identified ligands or well-defined biologic functions in mammals. We show that, in the developing CNS, Gpr124 is specifically expressed in the vasculature and is absolutely required for proper angiogenic sprouting into the developing neural tube. Embryos lacking Gpr124 exhibit vascular defects characterized by delayed vascular penetration, formation of pathological glomeruloid tufts within the CNS, and hemorrhage. In addition, they display defects in palate and lung development, two processes in which TGF-β and/or Wnt pathways also play important roles. We also show that TGF-β stimulates Gpr124 expression, and ablation of Gpr124 results in perturbed TGF-β pathway activation, suggesting roles for Gpr124 in modulating TGF-β signaling. These results represent a unique function attributed to a long N-terminal group B–type G protein-coupled receptor in a mammalian system.
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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  • 2
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    Synthesis of two-dimensional polymers (1993)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1993-01-01
    Description: A synthetic pathway is described to construct "in bulk" two-dimensional (2D) polymers shaped as molecular sheets. A chiral oligomeric precursor is used that contains two reactive sites, a polymerizable group at one terminus and a reactive stereogenic center near the middle of the molecule. The bulk reaction yields bilayer 2D polymers of molecular weight in the order of millions and a monodisperse thickness of 50.2 angstroms. The 2D molecular objects form through molecular recognition by the oligomers, which self-organize into layers that place the reactive groups within specific planes. The oligomers become catenated by two different stitching reactions involving the reactive sites. At room temperature, stacks of these molecular objects can organize as single crystals and at higher temperatures melt into smectic liquid crystals. Nonlinear optical experiments reveal that solid films containing the 2D polymers form structures that are thermally and temporally more stable than those containing analogous 1D polymers. This observation suggests that the transformation of common polymers from a 1D to a 2D architecture may produce generations of organic materials with improved properties.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Stupp, S I -- Son, S -- Lin, H C -- Li, L S -- New York, N.Y. -- Science. 1993 Jan 1;259(5091):59-63.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/17757473" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
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    SELENOPROTEINS. CRL2 aids elimination of truncated selenoproteins produced by failed UGA/Sec decoding (2015)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2015-07-04
    Description: Selenocysteine (Sec) is translated from the codon UGA, typically a termination signal. Codon duality extends the genetic code; however, the coexistence of two competing UGA-decoding mechanisms immediately compromises proteome fidelity. Selenium availability tunes the reassignment of UGA to Sec. We report a CRL2 ubiquitin ligase-mediated protein quality-control system that specifically eliminates truncated proteins that result from reassignment failures. Exposing the peptide immediately N-terminal to Sec, a CRL2 recognition degron, promotes protein degradation. Sec incorporation destroys the degron, protecting read-through proteins from detection by CRL2. Our findings reveal a coupling between directed translation termination and proteolysis-assisted protein quality control, as well as a cellular strategy to cope with fluctuations in organismal selenium intake.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4766860/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4766860/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Lin, Hsiu-Chuan -- Ho, Szu-Chi -- Chen, Yi-Yun -- Khoo, Kay-Hooi -- Hsu, Pang-Hung -- Yen, Hsueh-Chi S -- AG011085/AG/NIA NIH HHS/ -- R01 AG011085/AG/NIA NIH HHS/ -- New York, N.Y. -- Science. 2015 Jul 3;349(6243):91-5. doi: 10.1126/science.aab0515.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Institute of Molecular Biology, Academia Sinica, Taiwan. Genome and Systems Biology Degree Program, National Taiwan University, Taiwan. ; Institute of Molecular Biology, Academia Sinica, Taiwan. ; Institute of Biological Chemistry, Academia Sinica, Taiwan. ; Genome and Systems Biology Degree Program, National Taiwan University, Taiwan. Institute of Biological Chemistry, Academia Sinica, Taiwan. ; Department of Life Science, Institute of Bioscience and Biotechnology, National Taiwan Ocean University, Taiwan.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/26138980" target="_blank"〉PubMed〈/a〉
    Keywords: Codon, Terminator ; HEK293 Cells ; Humans ; Peptide Chain Termination, Translational/*genetics ; *Proteolysis ; SKP Cullin F-Box Protein Ligases/*metabolism ; Selenium/metabolism ; Selenocysteine/genetics/*metabolism ; Selenoproteins/genetics/*metabolism ; Ubiquitin/metabolism
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 4
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    Internal Photoemission at Interaces of ALD TaiO x Insulating Layers Deposited on Si, InP and In 0.53 Ga 0.47 As (2012)
    Institute of Physics (IOP)
    Details
    Publication Date: 2012-12-07
    Description: Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In 0.53 Ga 0.47 As with TaSiO x (Ta/Si≈1) films atomic-layer deposited using SiCl 4 , TaCl 5 , and H 2 O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiO x /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiO x layers exhibit a bandgap of only 4.5±0.1 eV, typica...
    Print ISSN: 1757-8981
    Electronic ISSN: 1757-899X
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Institute of Physics (IOP)
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  • 5
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    Absorption, emission and photolysis of C60 with far-UV excitation (2015)
    Oxford University Press
    Details
    Publication Date: 2015-07-31
    Description: Far-ultraviolet absorption spectra of solid C 60 were measured at 10 and 300 K with radiation from a synchrotron. Solid C 60 was irradiated with far-UV light and monitored with infrared absorption at 3 and 300 K. Emissions from solid C 60 were recorded upon excitation with far-UV radiation at 10 and 300 K. Information about the far-UV absorption and photolysis of solid C 60 is valuable for its implications about astrophysical environments. The emission feature of C 60 can provide a new means of identification for its observation in space.
    Print ISSN: 0035-8711
    Electronic ISSN: 1365-2966
    Topics: Physics
    Published by Oxford University Press
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  • 6
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    Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-09-03
    Description: In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g m ), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si 3 N 4 , Rapid Thermal Chemical Vapor Deposition Si 3 N 4 , and Atomic Layer Deposition (ALD) Al 2 O 3 ) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D it ), the amount of border traps, and the threshold voltage (V TH ) shift during a positive gate bias stress can be obtained. The results show that the V TH shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V TH shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D it needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g m dispersion commonly attributed to border traps might be influenced by interface states.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Increased Risk of Adverse Pregnancy Outcomes in Women Receiving Zolpidem During Pregnancy (2010)
    Wiley
    Details
    Publication Date: 2010-08-04
    Print ISSN: 0009-9236
    Electronic ISSN: 1532-6535
    Topics: Chemistry and Pharmacology , Medicine
    Published by Wiley
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  • 8
    Electronic Resource
    Electronic Resource
    Dielectric permittivity of some smectic phases in ferroelectric liquid crystals derived from (2s)-2-(6-hydroxy-2-naphthyl) propionic acid (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3681-3685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the dielectric response as a function of frequency (20–106 Hz) and temperature in smectic ferroelectric liquid crystals HmPBNP, m=6,8–12,16, has been carried out. For m=10–12, it reveals a transition sequence of five phases: crystal–SmC*γ–SmC*–SmC*α–SmA. Three Goldstone modes have been identified in different temperature intervals associated with SmC*γ, SmC*, and SmC*α phases, respectively. The ferroelectric phases almost totally disappear for m=6. An unexpected antiferroelectric (AF)-like phase accompanied by the ferroelectric phases forms for m=8. The formation of the AF-like phase might be explained by the fast increase of the relaxation frequencies of the Goldstone modes due to the reduction of the alkyl chain in H8PBNP. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361198
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of the Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4921-4923 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550 °C is demonstrated. The dark current density measured at 77 K is (2.5±0.1)×10−7 A/cm2 for the barrier height of 176±8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357206
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  • 10
    Electronic Resource
    Electronic Resource
    Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 747-752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous and polycrystalline compounds of (Ga,As) and (Al,As) grown at very low temperatures by molecular-beam epitaxy are characterized. The ultimate microstructure and the amount of excess arsenic incorporated in the (Ga,As) or (Al,As) layers are found to depend on the arsenic overpressure during the low-temperature growth. With lower arsenic overpressure, a polycrystalline structure prevails and less excess arsenic is observed inside the layer. In contrast, a high incorporation of excess arsenic achieved by high-arsenic overpressures leads to the formation of amorphous films. Upon wet oxidation, the lateral oxidation rate of (Al,As) is found to depend on the crystallinity of the (Al,As) layer and the amount of excess arsenic. During the same process, recrystallization proceeds in the (Ga,As) layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326466
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