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  • 1
    Electronic Resource
    Electronic Resource
    Coupling effects in Fe/CoNbZr and Fe/Ag/CoNbZr sandwiches studied by magneto-optical techniques : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4936-4938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental characterization of magnetic anisotropy, coercive field, and anisotropy dispersion of sputtered Fe/CoNbZr and Fe/Ag/CoNbZr sandwiches were carried out by transverse biased initial susceptibility (TBIS) measurements with a magneto-optic Kerr effect at both film/air and glass/film interfaces. Three different behaviors have been observed depending on the range of magnetization fluctuation. The results indicate that Fe grains play a fundamental role in the type of the dispersion (long range or short range). The results obtained from the coercive field and from x-ray diffractograms agree with those obtained by TBIS. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361594
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared absorption analysis of films deposited by glow-discharge of silane/helium mixtures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7031-7033 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using infrared (IR) absorption measurements, it is proposed that amorphous hydrogenated silicon films obtained from plasma-enhanced chemical vapor deposition of Silane (SiH4 ) highly diluted in helium at high rf-power densities, consist of an amorphous tissue in which a columnar microstructure is embedded. The evolution of the IR spectrum with dilution evidences a remarkable tendency to the substitution of monohydrides by dihydrides. The films show high transparency and good conductivity. These properties make them suitable to be used as window layers for thin-film solar cells when conveniently doped.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346078
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of the properties of boron-trifluoride-based amorphous silicon carbide on preparation conditions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6140-6145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type fluorinated and hydrogenated amorphous silicon carbide (a-Si:C:F:H) thin films have been prepared by plasma-enhanced chemical vapor deposition, using mixtures of silane (SiH4), methane (CH4), and boron trifluoride (BF3). The influence of preparation conditions on the optical and electrical properties of the films has been systematically studied with the aim of confirming the validity of BF3 to make p-type amorphous silicon carbide alloys and getting a better understanding of this material for its use in the preparation of p-type window layers of amorphous silicon solar cells. It has been found that the use of a low process pressure tends to prevent film growth as a consequence of the combination of a low density of radicals in the plasma and a high probability of desorption of species. High RF-power densities favor the incorporation of relatively large amounts of fluorine and the formation of defects. These two factors determine a poor doping efficiency and film quality. It has been shown that it is possible to prevent optical gap degradation if BF3 is used instead of B2H6. The effect is attributed to the incorporation of fluorine. Optimum dopant-gas concentrations seem to be of the order of 100%, instead of 1% as is the case for B2H6. This is due to the high tightness of the B-F bond. Our best films have an optical gap of 2.1 eV, a conductivity of 2.7×10−7 (Ω cm)−1 and an extended-state conductivity activation energy of 0.49 eV. Such properties make them suitable for their use as p-type window layers for amorphous silicon solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350422
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  • 4
    Electronic Resource
    Electronic Resource
    The role of ion bombardment in the rf-glow-discharge preparation of intrinsic amorphous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4618-4621 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the rf-power density and the silane mass flow rate on the properties and growth rate of glow-discharge amorphous silicon has been investigated. The silane deposition efficiency during the preparation process has been deduced using mass spectrometry. It has been found that this deposition efficiency is correlated with film quality and growth rate. Such a correlation and its dependence on the preparation parameters has allowed to find out a way to make films at increasing growth rates while keeping their properties essentially unchanged. The results are interpreted in terms of selective etching of weakly bonded radicals owing to ion bombardment. The research work undertaken has allowed to obtain intrinsic amorphous silicon of excellent photovoltaic properties with growth rates up to 10 A(ring) s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352755
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  • 5
    Electronic Resource
    Electronic Resource
    Sonolytic decomposition of poly(vinylpyrrolidone), ethanol and tetranitromethane in aqueous solution (1988)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 2978-2981 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100321a052
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  • 6
    Electronic Resource
    Electronic Resource
    Strain relaxation behavior of InxGa1−xAs quantum wells on vicinal GaAs (111)B substrates (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1541-1543 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A number of reports have suggested that InGaAs/GaAs (111)B strained layer epitaxy has the prospect of reaching a higher critical layer thickness than that which can be achieved for (001) substrates. This has motivated a study of the relaxation mechanism of InGaAs/GaAs (111)B quantum wells with high In content (0.12〈x〈0.35). Transmission electron microscopy has revealed the existence of a different misfit dislocation (MD) configuration for high In contents (x〉0.25), which, we believe, has not been reported until now. For such compositions, plastic relaxation takes place through a polygonal network of MDs, which have Burgers vectors in the interface plane. The origin of this network is an unusual dislocation source that occurs through the formation of a three-pointed star-shaped configuration. The characteristics of this misfit dislocation network, which has a higher misfit relieving component and a glide plane coincident with the interface plane, imply a reduction of the previous critical layer thickness estimates for high In content InGaAs/GaAs (111)B heterostructures. However, we observe that none of the (111)B samples shows evidence of a transition to a three-dimensional growth mode, which represents a significant advantage compared to the behavior of high In content quantum wells on (001) substrates. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455691
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  • 7
    Electronic Resource
    Electronic Resource
    A simple amorphous-silicon photodetector for two-dimensional position sensing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3408-3410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple two-dimensional position-sensitive detector is proposed and initial tests are reported. The device, aimed to be high-energy-radiation resistant and reliable under magnetic fields, is based on a set of small p-i-n amorphous silicon photodiodes acting as pixels sandwiched between two perpendicular strip electrode structures. No thin-film transistors are used. A simplified prototype has been made and tested. The results show that the position of a laser spot on its surface can be deduced from the signals it generates. Further work proposed, includes tests on possible cross talk and behavior under radiation and magnetic fields, as well as the development of methods for accurate position calculation and for appropriate response calibration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117275
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  • 8
    Electronic Resource
    Electronic Resource
    Absorption spectrum and chemical reactions of colloidal cadmium in aqueous solution (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 4598-4602 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100190a084
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  • 9
    Electronic Resource
    Electronic Resource
    Regulation of transpiration in coffee hedgerows: covariation of environmental variables and apparent responses of stomata to wind and humidity (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 17 (1994), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Stomatal regulation of transpiration was studied in hedgerow coffee (Coffea arabica L.) at different stages of canopy development encompassing a range of leaf area indices (L) from 0·7 to 6·7. Stomatal (gs) and crown (gc) conductance attained maximum values early during the day and then declined as both leaf-to-bulk air water vapour mole fraction difference (Va) and photosynthetically active photon flux density (I) continued to increase. Covariation of environmental variables during the day, particularly V, I, and wind speed (u), obscured stomatal responses to individual variables. This also caused diurnal hysteresis in the relationship between gc and individual variables. Normalization of gs and gc by I removed the hysteresis and revealed a strong stomatal response to humidity. At the crown scale, transpiration (E) increased linearly with net radiation (Rn) and seemed to increase with increasing wind speed. Increasing wind speed imposed higher leaf interior to leaf surface water vapour mole fraction differences (Vs) at given levels of Va. However, strong relationships between declining gc and E and increasing wind speed were obtained when gc and E were normalized by I and Rn, respectively, without invoking additional potential interactions involving temperature or CO2 concentration at the leaf surface. Apparent stomatal responses to wind were thus at least partially a reflection of the stomatal response to humidity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1994.tb00532.x
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  • 10
    Electronic Resource
    Electronic Resource
    Water relations of tropical dry forest flowers: pathways for water entry and the role of extracellular polysaccharides (2003)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 26 (2003), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Many trees in tropical dry forests flower during the dry season when evaporative demand is high and soil water levels are low. In this study the factors influencing the water balance of flowers from three species of dry forest trees were examined. Flowers had greater mucilage contents than leaves, high intrinsic and absolute capacitances, long time constants for water exchange and high transfer resistances. Flower water potentials were higher than in leaves and did not fluctuate over the lifespan of the flower. Flower water content also remained constant even though evaporation rates were high, suggesting that water was being supplied from the stem. In two of the species, the water potential gradient between flowers and leaves was opposite to that necessary for water transport from stem to flowers through the xylem, and it was therefore hypothesized that water may enter the flower through the phloem. Calculations showed that nectar production in these flowers could drive a sink of sufficient magnitude to allow water input via the phloem equal to water lost from the flower to the atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3040.2003.00998.x
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