ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Dopant compensation was studied for Si δ-doped InSb samples grown on GaAs (001) substrates. Hall-effect measurements indicate a sharp decline in electron density with increased substrate temperature when doping and cap-layer growth occur on the pseudo-(1×3) surface reconstruction, while little temperature dependence is observed for doping and growth on the c(4×4) surface reconstruction. Hall-effect measurements on samples grown with the substrate temperature differing between the dopant and cap layers rule out simple diffusion and desorption of Si atoms, and, along with secondary-ion mass spectrometry measurements, suggest that the temperature dependence of the carrier density results from compensation occurring primarily during growth of the cap layer. Similar behavior was observed in AlxIn1−xSb samples δ-doped with Si. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368018
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