Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1200-1202
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The oxidation of SiGe layers grown by molecular beam epitaxy was studied. Auger depth profile showed that after oxidation, Ge was completely rejected from the oxide and Ge-rich layers were formed. However, the Ge concentration in the SiGe layer was found to play an important role in the formation of these Ge-Rich layers. For SiGe with Ge concentration below 50%, Si was preferentially oxidized and only one Ge-rich layer was formed at the oxide/substrate interface. On the other hand, for SiGe with Ge concentration above 50%, two Ge-rich layers were formed after oxidation with one at the oxide/substrate interface and the other at the oxide surface. X-ray photoelectron spectroscopy studies showed that Ge at the oxide/substrate interface is in elemental form, while Ge at the oxide surface is in an intermediate oxidized state. A classical binary alloy oxidation theory is employed to explain the overall oxidation behavior qualitatively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105502
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