Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
77 (1995), S. 5443-5445
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the oxidation kinetics of Cu and Cu3Ge thin films in air using in situ resistivity measurement and x-ray photoelectron spectroscopy. Thin films of Cu oxidize in air around 250 °C to form CuO with an activation energy of 0.74 eV. In contrast to Cu, thin films of Cu3Ge oxidize only above 450 °C. The excellent oxidation resistance of Cu3Ge is due to the thin GeO2 layer which protects Cu3Ge from oxidation below 450 °C. Above 510 °C, GeO2 evaporates and the oxidation protection is lost. Besides the excellent oxidation resistance and low resistivity, we also found Cu3Ge to have a better adhesion to SiO2 than Cu. It has the potential to be used as an adhesion layer and passivation layer in Cu metallization. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359238
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