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  • 1
    Electronic Resource
    Electronic Resource
    Sputtering during ion implantation into gallium arsenide (1975)
    Springer
    Applied physics 7 (1975), S. 39-44 
    Details
    ISSN: 1432-0630
    Keywords: Sputtering-Ion implantation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The surface erosion caused by ion bombardment of solids and its effect on the number of ions retained in the solid was studied experimentally for a variety of ions implanted into GaAs with various fluences and energies. Experimental methods were interferometry and semi quantitative X-ray analysis by means of an electron microprobe. By an easy-to-use computer calculation the change in the implantation profiles was determined and the number of retained ions were related to the surface shift caused by sputtering. Comparison of this shift with the real erosion found before and after annealing was made. From the results, we conclude that the collapse of the crystal lattice contributes to the sinking of the bombarded surface. Sputtering data necessary to estimate the technical consequences of sputtering, range data of 100 keV Fe ions, and data indicating the sensitivity of X-ray analysis are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900518
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  • 2
    Electronic Resource
    Electronic Resource
    Raman study of Si+-implanted GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 808-814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Si+ implantation on the allowed and forbidden first-order and on the resonantly excited second-order Raman spectrum of GaAs has been studied. The implantation dose was varied between 5×1011 and 1×1016 ions/cm2. For doses exceeding 1015 cm−2, the Raman spectrum of a completely amorphized surface layer was observed. In samples implanted with doses ≤1015 cm−2, which show a partly crystalline/amorphous mixed state, the relative intensities of amorphous and crystalline features in the Raman spectrum vary significantly for different exciting photon energies. This is explained by differences in the dispersion of the Raman susceptibility in amorphous and crystalline GaAs. Dipole-forbidden but defect-induced first-order scattering by longitudinal optical zone center [LO(Γ)] phonons shows an initial increase with implantation dose, which is, for excitation resonant with the E1 gap, followed by a saturation and even a decrease in intensity. This is understood in terms of an implantation-induced broadening and lowering of the E1 gap resonance in the Raman susceptibility which counteracts the increase in radiation defects. The intensity of resonantly excited 2LO(Γ) phonon scattering shows a monotonic decrease with increasing dose, which also indicates a broadening of the E1 gap resonance in the corresponding Raman susceptibility. These results demonstrate the sensitivity of resonant Raman scattering to radiation damage induced changes in the dielectric function and open the possibility for a sensitive assessment of implantation damage in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341929
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  • 3
    Electronic Resource
    Electronic Resource
    Time constants and reaction cross sections characterizing film deposition by beam-induced polymerization (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2182-2184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental values are reported for parameters employed in the theory of film deposition from organic vapors by irradiation with charged particles. Direct evidence is given for the known assumption that for ion-beam-induced deposition the activation cross section is much larger than for electron-beam-induced deposition. It is shown that this cross section is a complex quantity presumably including energy transfer within the macromolecules and excitation by secondary particles. The other parameters were found to be consistent with their simple interpretations in the theory as the lifetime of an activated state and area per polymerization center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337173
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  • 4
    Electronic Resource
    Electronic Resource
    The lateral extension of radiation damage in ion-implanted semiconductors (1983)
    Springer
    Applied physics 32 (1983), S. 129-134 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.Jh ; 61.16.Di ; 61.70.Tm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Implantation into a confined surface area produces considerable radiation damage even outside the implanted area. The distance between the damage boundary and the implantation boundary can be determined by simultaneously recording the sample current and the characteristic x-ray signal in a scanning electron microscope. This method was applied to investigate the lateral extent of radiation damage in Si, GaAs, and GaP. Annealing studies were performed with Si. It was found that the lateral excess of damage over the implanted area can be more than 1 μm even if the projected range is less than 0.1 μm. In Si, this marginal damage, except for oxidation induced stacking faults, can be annealed under the same conditions as necessary for the annealing of the implanted zone itself. Experimental support is given to the prediction of Campisano and Barbarino [1] that within the implanted region the recrystallization rate of the amorphous layer reaches a maximum within a range of concentration near the maximal solid solubility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616608
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  • 5
    Electronic Resource
    Electronic Resource
    A simple method for the calculation of energy deposition profiles from range data of implanted ions (1977)
    Springer
    Applied physics 12 (1977), S. 347-353 
    Details
    ISSN: 1432-0630
    Keywords: 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A rectangular approximation of the energy-loss function is used to calculate the initial range distribution of the energy deposited into atomic processes by ion implantation. It is required that range data and three values of the specific energy loss are taken from computed tables available in the literature. The resulting formula can be expressed by the error function and can easily be evaluated by means of an error-function table as well as by simple computation. For implantation into silicon, the results of the approximation differ by about 10% of the maximal energy deposition from the more precise calculations of Brice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886037
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  • 6
    Electronic Resource
    Electronic Resource
    The investigation of radiation damage by electron beam absorption measurements (1978)
    Springer
    Applied physics 16 (1978), S. 339-343 
    Details
    ISSN: 1432-0630
    Keywords: 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Radiation damage in silicon was investigated by monitoring the absorbed sample current in a scanning electron microscope. The existence of different types of damage after implantation of light or heavy ions, respectively, could be revealed by plotting the change in sample current at the implantation boundary versus beam voltage. Results are explained by considering the yield and the anisotropy of electron backscattering in the presence of either small isolated defects or extended damaged zones. Applications of the new method are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885857
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  • 7
    Electronic Resource
    Electronic Resource
    Ion channeling in natural and synthetic beryl crystals (1980)
    Springer
    Applied physics 22 (1980), S. 47-52 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 Mk ; 61.70 Tm ; 2970 Gn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmission of ions by channeling through natural beryl and synthetic emerald has been studied extensively. The transmission ratios depend upon the angle of incidence with a full half width of less than 0.32°. While the maximum ratio obtained up to now is only 4×10−4 for 350 keV protons through a crystal of 21 μm thickness, the energy of the transmitted ions is high, the loss being in the order of a few keV/μm. About 60–80% of the particles emerging from the rear surface are ionized. By varying the ion species transmission could be observed up to atomic number 9. It is assumed that the transmission is facilitated by the existence of an electron free channel core. Higher transmission ratios can be expected for sufficiently perfect crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00897931
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  • 8
    Electronic Resource
    Electronic Resource
    Implantation doping of germanium with Sb, As, and P (1977)
    Springer
    Applied physics 12 (1977), S. 173-178 
    Details
    ISSN: 1432-0630
    Keywords: 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The ions of Sb, As, and P have been implanted into germanium at energies ranging from 200 keV to 700 keV. Annealing was performed at 400°C, 550°C, and 650°C. The doping profile was determined by differentialCV-measurements. Strong outdiffusion (80%) and diffusion into the bulk material was observed after annealing. The remaining doping concentration and the diffusion constants were determined by a computer fit at 650°C. We foundD Sb=1.8×10−13 cm2/s,D As=9×10−14 cm2/s andD P=4×10−14 cm2/s. Lower values of the diffusion constant were determined when the samples were covered with a SiO2 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896143
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  • 9
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    Radiation damage in ion‐implanted GaP and GaAs0.6P0.4 (1978)
    American Institute of Physics
    Details
    Publication Date: 1978-09-01
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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  • 10
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    A simple method for the calculation of energy deposition profiles from range data of implanted ions (1977)
    Springer
    Details
    Publication Date: 1977-04-01
    Print ISSN: 0340-3793
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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