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  • 1
    Electronic Resource
    Electronic Resource
    Growth modes of Ge on GaAs(001) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1680-1682 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used low-energy electron microscopy to investigate the growth of Ge on GaAs(001)-c(2×8). Depending on the growth temperature we find a wide variety of growth modes: At 420 °C growth proceeds layer by layer, with nucleation of two-dimensional (2D) islands smaller than 150 A(ring) across. An increase of growth temperature to 450–480 °C enhances surface diffusion and results in formation of large anisotropic 2D islands on wide terraces along with denuded zones—and step flow—along the step edges. Further temperature increase transforms the growth mode to step flow. At 540 °C the growth mode becomes unstable, resulting in a roughening of the Ge surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112884
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  • 2
    Electronic Resource
    Electronic Resource
    Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3544-3546 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdSe/ZnSe quantum structures were systematically investigated by high-resolution x-ray diffraction. The samples were grown at different growth temperatures on GaAs(001) substrates by molecular-beam epitaxy. A model is presented enabling the simulation and quantitative analysis of x-ray diffraction profiles influenced by stacking faults. This yields a fast and nondestructive method for the determination of stacking fault densities after calibration by transmission electron microscopy. A steep increase of the stacking fault density above a critical thickness was found. The critical thickness decreases with increasing growth temperature. Above this critical thickness, the amount of incorporated CdSe remains apparently constant. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328760
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  • 3
    Electronic Resource
    Electronic Resource
    Bi: Perfect surfactant for Ge growth on Si(111)? (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1391-1393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the growth of Ge on Bi-terminated Bi:Si(111)-(square root of 3)×(square root of 3). In-situ measurements of x-ray standing waves, crystal truncation rods and scanning tunneling microscopy clearly show that, at substrate temperatures around 485 °C, smooth and homogeneous Ge films of thicknesses exceeding 30 bilayers Ge can be grown. For Ge coverages larger than 10 bilayers, the Ge film is completely relaxed. Bi is found to segregate to the surface during Ge deposition, and can be removed from the surface after growth by mild annealing at 520 °C as proven by Auger electron spectroscopy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123560
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  • 4
    Electronic Resource
    Electronic Resource
    Stress reduction and interface quality of buried Sb δ doping layers on Si(001) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2906-2908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the width dependence of Sb delta (δ) doping layers grown by Si solid phase epitaxy (SPE) on the Sb surface reconstruction prior to Si deposition. Depending on the Sb adsorption conditions a 2×1 and a 2×n surface reconstruction is observed. Measurements of crystal truncation rods and x-ray standing waves show a drastically reduced interface roughness and a better crystal quality for δ layers grown on Sb:Si(001)−2×n substrates in comparison to Sb:Si(001)-2×1, which we attribute to reduced surface stress of the Sb:Si(001)-2×n reconstruction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117319
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  • 5
    Electronic Resource
    Electronic Resource
    Surfactant coverage and epitaxy of Ge on Ga-terminated Si(111) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2962-2964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the role of surfactant coverage and bonding for growth of Ge on Si(111). At 470 °C Ge grows on Si(111)-(7×7) in a Stranski–Krastanov fashion. Preadsorption of 1-ML Ga at 500 °C forms a Ga:Si(111)-(6.3×6.3) structure and alters the Ge growth mode from three-dimensional (3D) islanding to continuous film formation. However, the epitaxial layer contains defects, caused by the presence of domain boundaries of both A- and B-type material. Growth properties depend strongly on the initial Ga coverage: if a ((square root of)3×(square root of)3) surface with 1/3-mL Ga is used, a modified Stranski–Krastanov growth mode is observed, with 3D islands of a uniform predominant thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109157
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  • 6
    Electronic Resource
    Electronic Resource
    Towards perfect Ge δ layers on Si(001) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1394-1396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of different methods of growth on the interface quality of extremely thin buried GexSi1−x films (δ layers) was studied by means of in situ spot profile analysis low-energy electron diffraction and extensive postgrowth x-ray characterization by measurements of crystal truncation rods and x-ray standing waves. In comparison to molecular beam epitaxy, solid phase epitaxy and surfactant mediated growth result in a significant reduction of Ge–Si intermixing and interface roughness. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116091
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  • 7
    Electronic Resource
    Electronic Resource
    Surfactants in Si(111) homoepitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 487-489 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si epitaxy is strongly affected by the presence of an adsorbate (surfactant). We have examined both film quality and dopant incorporation in homoepitaxy for Sb, As, and Ga terminated Si(111). The efficency of site exchange between Si and adsorbate depends sensitively on binding energy and binding geometry of the adsorbate. For a weakly bound adsorbate (Ga or Sb), there is no inhibition of epitaxy, but a strongly bound adsorbate (As) kinetically inhibits growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114065
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  • 8
    Electronic Resource
    Electronic Resource
    Strain induced interface roughness of Si1−xCx δ layers on Si(001) (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3525-3527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultra thin buried Si1−xCx films (δ layers) of monolayer thickness and high carbon concentration (x〉0.1) in a Si matrix have been prepared by molecular beam epitaxy and were structurally characterized by high resolution x-ray diffraction, i.e., measurements of crystal truncation rods. The average interface roughness of the δ layers is in the order of 6–10 Å. A larger carbon deposit results in the formation of thicker Si1−xCx δ layers with lower carbon concentrations and smoother interfaces. This effect is attributed to a reduction of the strain in the δ layer due to the lower carbon concentration. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120380
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  • 9
    Electronic Resource
    Electronic Resource
    SPA-LEED studies of defects in thin epitaxial NiSi"2 layers on Si(111)
    Amsterdam : Elsevier
    Applied Surface Science 41-42 (1989), S. 230-235 
    Details
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0169-4332(89)90062-7
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  • 10
    Electronic Resource
    Electronic Resource
    Studies of crystalline defects during the early stages of growth of Si on Si(100) at low temperatures by spot profile analysis of LEED (SPA-LEED)
    Amsterdam : Elsevier
    Surface Science 269-270 (1992), S. 14-21 
    Details
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0039-6028(92)91221-V
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