Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 1977-1980
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An SiO2-encapsulated silicon-on-silica structure has been used to examine quantitatively the supercooling of Si. Fully melted, isolated Si islands generally exhibit a maximum supercooling of 235 °C, i.e., their freezing occurs at a temperature around 1175 °C. The implications of this behavior for the growth of thin Si films on amorphous substrates via zone melting are presented and briefly discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336376
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