ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Our work is focused on the identification of defects responsible for current fluctuations atthe origin of low frequency noise or random telegraphic signals in 4H-SiC MESFETs on semiinsulating(SI) substrates. We show that devices having instabilities have DC output characteristicswith random discrete fluctuations of the drain current. The RTS noise parameters analysis(amplitude, high and low state time durations) as a function of temperature and bias voltageprovides the signature of the involved traps (activation energy and cross section both for emissionand capture). From the power spectral density of the drain current noise (PSD) we have measuredthe cut-off frequency of a single trap even at very low frequencies (from 0.1 Hz) and we proposethat the noise responsible of RTS fluctuations is a generation-recombination noise. Finally, it isshown that the frequency analysis of the random telegraphic signal is a well-suited tool for the studyof single defects in very small devices
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1251.pdf
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