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  • 1
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    Identification of a new phase formed during the oxidation of γ-tttanium aluminum (1996)
    Elsevier
    Details
    Publication Date: 1996-03-01
    Print ISSN: 1359-6462
    Electronic ISSN: 1872-8456
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Elsevier
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  • 2
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    Protection of γ-based TiAl against high temperature oxidation using ion implantation of chlorine (2000)
    Elsevier
    Details
    Publication Date: 2000-03-01
    Print ISSN: 0257-8972
    Electronic ISSN: 1879-3347
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Elsevier
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  • 3
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    The effect of surface preparation on the oxidation behavior of gamma TiAl-base intermetallic alloys (1996)
    Elsevier
    Details
    Publication Date: 1996-12-01
    Print ISSN: 1359-6462
    Electronic ISSN: 1872-8456
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Elsevier
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  • 4
    Electronic Resource
    Electronic Resource
    TEM Investigations Concerning the Effect of Nitrogen on the Oxidation of TiAl (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 251-254 (Oct. 1997), p. 211-218 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/02/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.251-254.211.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Microstructural Study of Oxidized γ-TiAl (1998)
    Springer
    Oxidation of metals 50 (1998), S. 269-307 
    Details
    ISSN: 1573-4889
    Keywords: TITANIUM ALUMINIDE ; NITROGEN EFFECT ; SURFACE FINISH EFFECT ; Al-DEPLETION ; TEM
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The microstructural development of oxidizedγ-TiAl is presented with a focus on oxidation inair. The investigations were carried out usingconventional, analytical, and, especially,energy-filtered transmission electron microscopy (EFTEM). Threeimportant points were studied in detail: (1) the“nitrogen effect,” (2) the“surface-finish effect,” and (3) thesubsurface zone. Nitrogen leads to the formation of TiN andTi2AlN at the metal-scale interfaceinterrupting alumina and thereby preventing thedevelopment of a continuous alumina layer. TheAl-depletion layer formed during the oxidation process develops from a single-phaselayer, consisting of a cubic phase, to a two-phaselayer, consisting of the cubic phase andα2-Ti3Al. The cubic phase isnot known in the system Ti-Al-O-N. Oxidation in oxygen depends on the surfacepreparation of the sample with rapid oxidation kineticsfor fine polishing and slow kinetics for a 600-gritSiC-paper finish. The rougher surface finish leads to the development of a recrystallization zonenear the surface and supports the formation of acontinuous alumina layer in the early stages ofoxidation. As for the oxidation in air, the cubic phaseis formed first underneath the oxide scale,followed by α2-Ti3Alformation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018892422121
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  • 6
    Electronic Resource
    Electronic Resource
    Isothermal Oxidation of α2-Ti3Al (2000)
    Springer
    Oxidation of metals 54 (2000), S. 121-138 
    Details
    ISSN: 1573-4889
    Keywords: titanium aluminides ; oxidation ; oxygen-affected zone ; alpha case ; TEM
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The isothermal oxidation behavior of binary Ti–25 at.% Al was studiedat 1073, 1173, and 1273 K in air and oxygen with emphasis on themicrostructure of the subsurface zone underneath the external oxidescale. Thermogravimetric analysis, acoustic-emission (AE) analysis, lightmicroscopy, scanning electron microscopy (SEM), atomic force microscopy(AFM), and cross-sectional transmission electron microscopy (TEM) werecarried out. Three layers could be identified in the subsurface regionconsisting of an internal oxidation zone of α-Al2O3,and α-Ti, a ternary phase with the empirical formulaTi–21Al–15O (at.%), and an oxygen penetration zone consisting ofα2-Ti3Al(O).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004606830538
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  • 7
    Electronic Resource
    Electronic Resource
    XRD Investigations of the Phosphorus Effect on the Oxidation of TiAl Alloys by High-Resolution Methods (2000)
    Springer
    Oxidation of metals 54 (2000), S. 317-337 
    Details
    ISSN: 1573-4889
    Keywords: TiAl ; oxidation ; phosphorus ; microdiffraction ; doping ; rutile
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Recently it has been found that very small amounts (a few 100 ppm) of Padded to γ -titanium aluminide can significantly alter the oxidationbehavior between 973 and 1273 K. The mechanism responsible for this changeis, however, still not clear. In the present study, phosphorus wasincorporated into the surface of TiAl (containing 50 at.% Al) by ionimplantation and oxidation tests were carried out at 1173 K inair. Improvement of oxidation resistance is only temporary up to 100 hr forphosphorus-implanted TiAl. After 100 hr, the oxidation rate increases andbreakaway oxidation follows. XRD and EPMA showed that the breakawayoxidation is connected with massive nitride formation. Two different modelsare proposed which can explain the effect of phosphorus additions on theoxidation kinetics of TiAl during the protective stage within the first100 hr. The breakaway effect can be explained by penetration of air to themetal–oxide interface zone because of microcrack formation in theoxide scale, which was experimentally proved by acoustic-emission analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004606513758
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  • 8
    Electronic Resource
    Electronic Resource
    Development and microstructure of the Al-depleted layer of oxidized TiAl (1997)
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 48 (1997), S. 23-27 
    Details
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Entwicklung und Mikrostruktur der Verarmungszone bei der Oxidation von TiAlDie Mikrostruktur und Entwicklung der bei der Oxidation von γ-TiAl entstehenden Oxidschicht ist mit Hilfe metallographischer und elektronenmikroskopischer Querschnitte untersucht worden. Ti-50(at.%)Al wurde bei 900°C in Luft für verschiedene Zeiten isotherm oxidiert und speziell die Entwicklung der Metall/Oxid-Grenzfläche untersucht. Eine an Al verarmte Metallrandzone hat sich nach 1 h Oxidation gebildet und entwickelt sich mit zunehmender Oxidationszeit von einer einphasigen in eine zweiphasige Schicht. Die einphasige Schicht ist bis 100 h vorhanden und besteht aus einer primitiv kubischen Phase mit Gitterparameter a 0,692 nm. Nach 140 h Oxidation liegt α2-Ti3Al in der Verarmungszone neben der kubischen Phase vor. Beide Phasen besitzen einen geringeren Al-Gehalt als die Ausgangslegierung. Ebenso konnte Sauerstoff in beiden Phasen nachgewiesen werden, wobei die kubische Phase mehr Al and O enthält als α2-Ti3Al. Die metallographischen Querschliffe zeigen die Bildung von α2-Ti3Al an der Grenzfläche γ-TiAl/Verarmungszone mit einem anschließenden Wachstum in die kubische Phase der Verarmungszone.
    Notes: The microstructure and development of the scale of oxidized γ-TiAl were studied in cross section by electron microscopy and metallographic techniques. Ti-50(at.%)Al samples were oxidized at 900°C in air for various times and especially the evolution of the scale/metal interface was investigated. The formation of the aluminium deplete d subsurface layer could be observed after 1 h and develops from a single phase to a two phase region with longer exposure times The single phase region is visible up to 100 h and consists of a simple cubic phase with lattice parameter a = 0.692 nm. After an oxidation time of 140 h the formation of a two phase region consisting of and the cubic phase occurred. Both phases are depleted in aluminium compared to the base metal and contain some amount of oxygen whereby the cubic phase contains more Al and O than α2-Ti3Al. The metallographic cross sections suggest that the α2-Ti3Al phase forms at the -γ-TiAl/cubic-phase interface and grows into the cubic phase.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/maco.19970480105
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  • 9
    Electronic Resource
    Electronic Resource
    Interdiffusion at the Al2O3/Ti interface studied in thin-film structures Dedicated to Professor Siegfried Hofmann on the occasion of his 60th birthday. (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 861-867 
    Details
    ISSN: 0142-2421
    Keywords: AES depth profiling ; XPS ; metal/oxide thin-film structures ; Al2O3/Ti interface ; interdiffusion ; interfacial reactions ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The early-stage interfacial reactions between amorphous Al2O3 (a-Al2O3) and crystalline α-Ti (c-Ti) thin films were studied in thin-film structures with two different thicknesses. Smooth silicon (111) substrates were covered firstly with a TiN thin-film diffusion barrier and then with a crystalline Ti layer. Finally, amorphous Al2O3 was sputter deposited onto the crystalline Ti layer. The samples were heated in a differential scanning calorimeter with a linear heating rate of 40°C min-1 - from room temperature up to different final temperatures of 350-700°C in an argon atmosphere to activate reactions at the a-Al2O3/c-Ti interfaces - and then rapidly quenched. The interdiffusion at the a-Al2O3/c-Ti interface was studied using the rate of change of the reaction width obtained from Auger electron spectroscopy (AES) sputter depth profiles. The beginning of the reaction, which involves the diffusion of oxygen (followed by Al) into the c-Ti thin film, was observed at ∽425°C. The activation energy at the a-Al2O3/c-Ti interface was found to be 1.6 eV for the oxygen diffusion from the amorphous Al2O3 into the c-Ti thin film between 425°C and 650°C, and 0.9 eV for the Al diffusion between 500°C and 625°C. The new crystalline reaction product is composed of α2-Ti3Al phase and a solid solution of oxygen in α-Ti. The influence of different sample structures on kinetic quantities is discussed. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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