Publication Date:
2011-08-19
Description:
A guide-antiguide modulator of GaAs-AlGaAs using the electric-field-induced waveguide concept was demonstrated. The device was formed with a central waveguide electrode sandwiched between two antiguide electrodes on the surface of a p-i-n multiple quantum well (MQW). Switching between lateral guiding and antiguiding was accomplished by reverse biasing either the central electrode or the adjacent electrodes to increase the index beneath these respective regions. The on-off ratio was measured to be 20:1 with a propagation loss of the on-state of about 5 dB/mm.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
IEEE Photonics Technology Letters (ISSN 1041-1135); 3; 141-143
Format:
text
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