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  • 1
    Electronic Resource
    Electronic Resource
    Spontaneous growth of coherent tilted superlattice on vicinal (100) GaAs substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1690-1692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Periodic Al composition modulations have been observed to occur spontaneously during molecular beam epitaxy of AlGaAs on vicinal (100) substrates. The formation of the spontaneous Al modulation requires (a) the migration-enhanced epitaxy deposition and (b) one monolayer deposition of Al and Ga atoms per cycle, hence, the denomination of coherent tilted superlattice (C-TSL). Cross-sectional transmission electron microscopy clearly shows that the C-TSL has the periodicity of the surface steps. We also show that the Al-rich regions of the C-TSL form at the bottom of steps before the As flux is established. These results indicate that growth kinetics dominates the C-TSL formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101304
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic states tuning of InAs self-assembled quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3172-3174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121583
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  • 3
    Electronic Resource
    Electronic Resource
    Degradation kinetics of GaAs quantum well lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2683-2685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation-induced dark line defect growth velocities have been found to be inversely proportional to the operating temperature in quantum well lasers under current injection. A model has been developed, which considers the differing band structure and role of deep levels in quantum well structures as opposed to conventional double-heterostructure lasers. Our findings have significant implications for device yield since they suggest nontraditional screening strategies that recognize temperature as a decelerant for the sudden failure mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101034
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic properties and imaging of Mn-implanted GaAs semiconductors : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5296-5298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Submicron ferromagnets have been successfully incorporated into GaAs semiconductors by Mn+ ion implantation and subsequent heat treatment. Transmission electron microscopy, x-ray fluorescence spectrum analysis, and atomic force microscopy are used to structurally characterize the GaMn precipitates which form within the GaAs matrix. These crystallites are room-temperature ferromagnets with controllable magnetic properties. Magnetic force microscopy images reveal that unmagnetized samples contain both magnetic dipoles and quadrupoles, but that after magnetization the single-domain state predominates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361356
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  • 5
    Electronic Resource
    Electronic Resource
    Optical emission from a charge-tunable quantum ring (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 405 (2000), S. 926-929 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Quantum dots or rings are artificial nanometre-sized clusters that confine electrons in all three directions. They can be fabricated in a semiconductor system by embedding an island of low-bandgap material in a sea of material with a higher bandgap. Quantum dots are often referred to as ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35016030
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  • 6
    Electronic Resource
    Electronic Resource
    Argon ion damage in self-assembled quantum dots structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2935-2937 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of radiation damage exposure on InGaAs quantum wells and InAs quantum dots are compared using luminescence spectroscopy techniques. A large increase in the radiation resistance of the InAs quantum dots is observed and attributed to exciton localization in the quantum dots and a point defect strain gettering effect. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122635
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  • 7
    Electronic Resource
    Electronic Resource
    Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 692-694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the growth of InGaN/GaN multiple quantum well (MQW) structures, a novel defect (called the "V-defect") initiates at threading dislocations in one of the first quantum wells in a MQW stack. This defect is common to almost all InGaN MQW heterostructures. The nature of the V-defect was evaluated using transmission electron microscopy (TEM), scanning TEM (STEM), and low-temperature cathodoluminescence (CL) on a series of In0.20Ga0.80N/GaN MQW samples. The structure of the V-defect includes buried side-wall quantum wells (on the {101¯1} planes) and an open hexagonal inverted pyramid which is defined by the six {101¯1} planes. Thus, in cross section this defect appears as an open "V". The formation of the V-defect is kinetically controlled by reduced Ga incorporation on the pyramid walls ({101¯1} planes). The V-defect is correlated with the localized excitonic recombination centers that give rise to a long-wavelength shoulder in photoluminescence (PL) and CL spectra. This long-wavelength shoulder has the following characteristics: (i) its intensity is correlated with the side-wall quantum wells; (ii) the temperature independence of the full width at half maximum strongly supports a localized exciton recombination process. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120844
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  • 8
    Electronic Resource
    Electronic Resource
    p on n heterostructures in HgCdTe on GaAs analyzed by transmission electron microscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7952-7954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of p on n HgCdTe heterostructures grown by molecular beam epitaxy on GaAs(211) B substrates have been analyzed by transmission electron microscopy. The HgCdTe absorber layer is grown on a CdTe buffer and doped n type with indium. The p-type arsenic dopant is incorporated in the heterostructure during growth into a HgTe/CdTe cap superlattice and annealed ex situ to form the random alloy. The active p-n junction is formed below the as-grown p-n interface as a result of As diffusion. We compare the device performance with the microstructural defects in the various regions of the device layers and show the importance of dislocations near the p-n junction as well as in the n layer in influencing device quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354093
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  • 9
    Electronic Resource
    Electronic Resource
    Measuring linear polarization of photoluminescence and photoluminescence excitation using a photoelastic modulation technique (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2397-2402 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization modulation is used to investigate the polarization dependencies in the low-temperature photoluminescence (PL) and the photoluminescence excitation (PLE) of GaAs/AlGaAs quantum wire arrays. The modulation technique employing a photoelastic modulator is described and its implementation in the experimental setup of the PL and PLE experiments is presented. In the PL experiment the technique is used to analyze the emitted light with respect to its polarization, whereas for the PLE experiment the polarization of the exciting light is modulated, probing the polarization dependence of the absorption of the light. Since the modulation of the light is restricted to the polarization, the polarization dependence can be measured simultaneously with the PL or PLE intensity. The versatility and the sensitivity of the technique is exemplified by presenting results of polarized PL and PLE obtained on quantum wire samples grown on the vicinal (100) surface of GaAs by molecular-beam epitaxy that show a considerable anisotropy in the linear polarization for both the PL and PLE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351096
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  • 10
    Electronic Resource
    Electronic Resource
    In situ YBa2Cu3O7−x superconductor films on GaAs/AlAs superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5108-5110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−x films have been deposited in situ onto III-V superlattice substrates. The substrates were GaAs/AlAs superlattices grown by molecular beam epitaxy onto GaAs substrates. For 5000-A(ring) -thick YBCO films grown at 615 °C substrate temperature, we have obtained Tc of 73 K. For thinner films the Tc's are lower, indicating poor interfaces. However, the onset of the superconducting transition is 90 K in all cases. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM) show these films to be polycrystalline. TEM shows an interaction layer of about 1000 A(ring) at the interface. Low-temperature cathodoluminescence measurements of the substrate show that atomic interdiffusion has intruded at least 5000 A(ring) below the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349020
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