ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We investigated the growth, interface formation as well as the structural and electricalproperties of crystalline gadolinium oxide (Gd2O3) directly grown on 6H-SiC(0001) substrates bymolecular beam epitaxy. The Gd2O3 layers were found to grow epitaxially resulting in the formationof flat (111) oriented layers with the cubic bixbyite type of structure. X-ray photoelectronspectroscopy measurements reveal a silicate-like Gd2O3/SiC interface. Furthermore, conduction andvalence band discontinuities at the Gd2O3/6H-SiC interface were estimated with 1.9 eV and 1.2 eV,respectively. The fabricated capacitors exhibit suitable dielectric properties at room temperature;such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1V and breakdown fields 〉4.3 MV/cm for layers with 14 nm thickness. The CV measurements exhibit only small negative flatband shifts and a very small hysteresis, resulting from fixed charges or interface trap levels in therange of 1x1012 cm-2. These properties make Gd2O3 suitable for high-k application also for SiC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.655.pdf
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