Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 4767-4769
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The stresses in GaAs/Si samples which were prepared under different growing conditions were determined by the x-ray diffraction method. The results show that the stress in GaAs/Si samples is reduced by improving the homogeneity of the thermal field. As the thickness of the epitaxial film increases, the curvature of the sample increases, but the stress remains in the same order.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343787
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