ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A new non-destructive method was developed to identify the grinding mode of siliconwafers, which is based on the information of subsurface cracks extracted from the surfacetopography of the ground silicon wafers measured with a 3D surface profiler. We examinedextensive measurement data of the surface topography of silicon wafers processed by single graingrinding or real grinding operation, and our results show that the information about median crackscould be captured if the lateral sampling interval of the 3D surface profiler is small enough, even ifthe grain depth of cut is below 20nm. If the maximum valley of the measured surface topography isapproximately equal to the grain depth of cut, surface formation will be under ductile mode,whereas, if the maximum valley is several times larger than the grain depth of cut, surfaceformation will be under brittle mode. According to this criterion, silicon wafers ground by ductilemode or brittle mode could be identified rapidly and conveniently. Experimental validation showsthat this method is accurate
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.24-25.255.pdf
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