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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7616-7618 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-matrix dose dependence calculations for plasma source ion implantation in planar, cylindrical, and spherical geometries are presented. It is demonstrated that in the high plasma density limit (in relation to the applied electrode potential and electrode size), the spherical and cylindrical cases approach the planar case. However, in the low relative density limit, the density dependencies diverge with the dependence vanishing for the spherical case, remaining unchanged for the planar case, and with the cylindrical case lying between the previous two. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4176-4180 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion species and their ratios in nitrogen, oxygen, and argon plasmas in the plasma source ion implantation process have been determined with a simple and low-cost measurement system. The measured ion species ratio in the nitrogen plasma was used as an input parameter for the computer simulation code transport and mixing from ion irradiation to predict the atomic composition-depth profile. Comparison between the code results and data derived from Auger analysis for a nitrogen-implanted Ti-6Al-4V alloy showed good agreement. In this article, the design, performance, and possible future improvements regarding the resolution of this measurement system will be discussed.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1015-1019 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A wedge-shaped target was implanted with nitrogen ions using the plasma source ion implantation process, in order to understand the effects of the target edges on the energy and fluence distribution of incident ions. Experimental measurements and analysis of retained dose on silicon samples affixed on the surface of the target, showed results consistent with those predicted by theoretical models. Higher retained dose and greater implantation depths were observed in the vicinity of the edge contained by the normal angle as compared to the edges contained by the acute angles. The target face with smaller area accumulated, on the average, higher dose compared to the face with the larger area. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4756-4759 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental procedure has been developed to measure electron emission due to energetic ion bombardment during plasma source ion implantation. Spherical targets (radius=2 cm) of copper, stainless steel, graphite, titanium alloy (Ti-6Al-4V) and aluminum alloy (6061) were biased negatively to 20, 30, and 40 kV in argon and nitrogen plasmas. A Langmuir probe was used to detect the propagating sheath edge and a Rogowski transformer was used to measure the current to the target. The measurements of electron emission coefficients compare well with those measured under similar conditions [B. Szapiro and J. J. Rocca, J. Appl. Phys. 65, 3713 (1989)].
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1241-1245 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model has been developed that describes the propagation of the transient sheath during a pulse of high negative voltage applied to a conductor immersed in a plasma such as that present in plasma source ion implantation. This model assumes that the transient sheath obeys the Child–Langmuir law for space-charge-limited emission at each instant during the propagation of the sheath. Expressions are obtained for the sheath-edge position as a function of time. The model predicts the final sheath extent and average ion current to the target during each pulse for planar, cylindrical, and spherical geometries.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6757-6760 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen ion implantation of Ti-6Al-4V knee joint femoral components was carried out by both plasma source ion implantation (PSII), a non-line of sight technique, and conventional beamline implantation. Implantation using the PSII process was performed on a flat sample as well as a 2×2 square array of components to demonstrate batch processing capability. The retained dose of the flat sample and at different locations on the implanted components was measured by a scanning auger microprobe (SAM). The variation in dose of the PSII treated component was found to be within the SAM error, while the dose at one location on the beamline implanted component was found to be significantly low. For the beamline case, the SAM results show good agreement with the PC profile computer simulation, which includes the angular dependence of sputtering.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 1064-1074 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using laser-induced fluorescence (LIF) the ion density near the edge of an expanding plasma sheath has been measured. These measurements utilized a transition of N+2 [the P12 component of the X 2Σ+g(ν=0)→B 2Σ+u(ν=0) band] in a N2 plasma. The strength of the laser-induced fluorescence was used as a measure of the temporally and spatially varying ion density. The expanding sheath was produced by applying a −5 kV pulse to a polished planar electrode in the plasma source ion implantation device [J. R. Conrad et al., J. Vac. Sci. Technol. A 8, 3146 (1990)]. The laser beam was aligned normal to the surface and was reflected off the center of the electrode. The LIF diagnostic used here is nonperturbing whereas previous researchers have used Langmuir probes, which perturb the plasma, to make their measurements. As such, the data reported here represent a benchmark measurement of pulsed sheaths and allow a better comparison between experimental measurements and theoretical predictions. It has been found that the sheath edge moves approximately 16 times faster than the ion-acoustic velocity during the early part of the pulse, t〈1 μs, and then slows to approximately the ion-acoustic velocity after 6 μs. In addition to the LIF measurements, a biased probe was used far from the cathode to determine the sheath edge location. Good agreement is found when the LIF and probe data are compared. The LIF data also are compared to the predictions of a simulation that is based on a time-varying two-fluid model of the sheath [G. A. Emmert and M. A. Henry, J. Appl. Phys. 71, 113 (1992)]. While the predictions of the model show moderate agreement with the data, substantial discrepancies are observed. These discrepancies are attributed to a number of physical phenomena that are not included in the present model.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1707-1712 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have employed Rutherford backscattering spectroscopy and secondary ion mass spectrometry to characterize the ion implantation dose uniformity which can be achieved with plasma source ion implantation (PSII), a non-line-of-sight technique for ion implantation of nonplanar targets in nonsemiconductor applications. In order to characterize the dose uniformity achievable with PSII, four spherical Ti-6Al-4V targets were PSII implanted simultaneously as a 2×2 square array in a nitrogen plasma with density 3×109 cm−3 at an energy of 50 keV to a nominal dose of 3×1017 atoms/cm2. The measured root-mean-square variation of both the retained dose and the mean range was found to be less than 15%, which is well within the acceptable tolerance range for nonsemiconductor applications of ion implantation. Our results demonstrate that PSII can achieve acceptable dose uniformity on nonplanar targets without target manipulation, and that such uniformity can be achieved in a batch processing mode.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 816-818 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The discharge and ion extraction properties of a beam-plasma ion source have been studied experimentally. The extractable ion current is maximized when the discharge column length is chosen to be an optimum length. The peak extracted ion current can exceed the Child–Langmuir current as much as an order of magnitude.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4591-4596 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma source ion-implantation (PSII) is a new ion-implantation technique which has been optimized for surface modification of materials such as metals, plastics, and ceramics. PSII departs radically from conventional implantation technology by circumventing the line-of-sight restriction inherent in conventional ion implantation. In PSII, targets to be implanted are placed directly in a plasma source and then pulse biased to a high negative potential. A plasma sheath forms around the target and ions bombard the entire target simultaneously. Preliminary experiments have demonstrated that PSII: (1) efficiently implants ions to concentrations and depths required for surface modification, (2) produces material with improved microhardness and wear properties, and (3) dramatically improves the life of manufacturing tools in actual industrial applications. For example, the tool life of M-2 pierce punches used to produce holes in mild steel plate has been increased by a factor of 80.
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