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  • 1
    Electronic Resource
    Electronic Resource
    Thermal Stability of the Pigments Hydroxysafflor Yellow A, Safflor Yellow B, and Precarthamin from Safflower (Carthamus tinctorius) (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 68 (2003), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Three major yellow pigments were isolated from safflower petals (Carthamus tinctorius) and characterized as hydroxysafflor yellow A (1), safflor yellow B (2), and precarthamin (3) by 1H-NMR, 1H-1H COSY, 13C-NMR, HMQC, and HMBC spectral analysis. Thermal degradation reactions of 3 yellow pigments 1 to 3 at temperatures of 70 to 90 °C were carried out at different pH levels within the range of 3.0 to 10.0 by UV-vis spectral measurements. First-order reaction kinetics was observed for the degradation of safflower yellow pigments (1 to 3) at pH 3.0 and 5.0. Activation energies of thermal degradation of 1-3 at pH 5.0 were calculated as 17.0, 15.4, and 20.1 kcal/mol, respectively. At neutral and alkaline conditions, yellow pigments 1-3 did not follow simple first-order kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2003.tb08252.x
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  • 2
    Electronic Resource
    Electronic Resource
    The virtual cathode as a transient double sheath (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2927-2933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two-dimensional plasma potential measurements are given of a space-charge dominated double sheath near a hot cathode. Laboratory data show that a virtual cathode is a self-consistent solution only for a transient cathode-plasma system. Slow charge exchange ions get trapped in the potential dip that forms the virtual cathode and eventually destroy it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341552
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  • 3
    Electronic Resource
    Electronic Resource
    Particle and power balances of hot-filament discharge plasmas in a multidipole device (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3254-3259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper considers particle and power balances to estimate the bulk plasma potential of a hot-filament discharge plasma produced in a multidipole plasma device. The bulk plasma potential dependence on positive dc bias applied to an anode is analyzed, and the predicted characteristics of the plasma potential are compared to the experiment. It is shown that the plasma potential can be more positive or more negative than the anode bias potential. When the potential is more negative, a steady-state potential dip in front of an anode is observed using emissive probes with the zero-emission inflection point method. Conditions for the potential dip formation are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345358
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic and collisional effects on presheaths (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 3222-3233 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of both magnetic field and collisions on presheath properties are experimentally investigated in plasmas with electron temperatures much greater than ion temperatures. Measurements of plasma potential in collisionless plasmas show presheath thicknesses at boundaries oblique to magnetic field to be approximately (Cs/ωci)sin ψ, where Cs is the ion sound speed, ωci is the ion gyrofrequency, and Ψ is the angle between the magnetic field and the normal to the wall boundary. Measurements of plasma potential in collisional plasmas find presheaths consisting of two distinctive regions. With ion–neutral collision mean-free path λn〈(Cs/ωci)sin ψ, the presheath region next to the sheath has collisional characteristics and a thickness of approximately (0.5–0.6)λn. The corresponding presheath region adjacent to the bulk plasma has magnetic characteristics and a thickness of approximately (0.5–0.9)(Cs/ωci)sin ψ. Equipotential contours in the collisional region of this presheath are found to be parallel to the boundary, while those in the magnetic region are not. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871153
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  • 5
    Electronic Resource
    Electronic Resource
    Emissive probe current bias method of measuring dc vacuum potential (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 270-275 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: It is experimentally demonstrated that, with proper current bias, emissive probes can accurately measure dc electric potential in a vacuum. A comparison is made of the accuracy and time response of this "vacuum current bias'' method with two other emissive probe techniques, the inflection point in the limit of zero emission, and the floating potential of a strongly heated probe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140239
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 198-204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial Y2O3 films were grown on an Si(111) substrate by ion assisted evaporation in an ultrahigh vacuum, and their properties such as crystallinity, film stress, and morphological change were investigated using the various measurement methods. The crystallinity was assessed by x-ray diffraction (XRD) and reflection high-energy electron diffraction. Interface crystallinity was also examined by Rutherford backscattering spectroscopy (RBS) channeling and transmission electron microscopy. The strain of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were observed by atomic force microscopy and x-ray scattering method. By comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface interaction between the yttrium metal and Si substrate. Moreover, the film quality dominantly depended on the deposition temperature. The crystallinity was greatly improved and the surface roughness was drastically decreased in the temperature range 500–600 °C. On the other hand, in the temperature range 600–700 °C, the compressive stress and film density were further increased, and the island size decreased. Also, the shape of the surface islands was transformed from elliptical to triangular. The film stress was found primarily at the interface area because of the interaction between yttrium and Si substrate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370717
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  • 7
    Electronic Resource
    Electronic Resource
    Structural characteristics of Y2O3 films grown on oxidized Si(111) surface (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1647-1652 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the characteristics of Y2O3 films grown on an oxidized Si(111) surface, using x-ray diffraction, Rutherford backscattering spectroscopy, and high-resolution transmission electron microscopy. The films grown on the oxidized Si show drastically improved crystallinity, compared with the film grown on clean Si surfaces: channeling minimum yield (Xmin) of 2.5% and full width at half maximum of rocking curve lower than 0.03°. The improvement of the crystallinity was due to the difference of the crystalline structure at the interface between the films grown on the oxidized and clean Si surfaces. Crystalline orientation of Y2O3 islands at the interfacial region was misaligned from the normal substrate direction. The misalignment decreased with increasing the substrate temperature. In particular, the ordering of the oxygen atom in the film grown on oxidized Si was improved compared to that of the Y atom, indicating that the crystallinity of the film is dominantly determined by the arrangement of the oxygen atom in the unit cell. These characteristics of crystalline structure are influenced by the interfacial interactions among SiO2, Y, and Si. The interfacial SiO2 layer can be removed at high growth temperature above 800 °C using the reaction process; the high crystalline Y2O3 film without any interlayer oxide can be obtained. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337920
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  • 8
    Electronic Resource
    Electronic Resource
    Growth stage of crystalline Y2O3 film on Si(100) grown by an ionized cluster beam deposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2909-2914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the initial and epitaxial growth stage of Y2O3/Si(100) grown by reactive ionized cluster beam deposition, using x-ray diffraction (XRD), atomic force microscope, and reflection high-energy electron diffraction. We also investigated the crystalline structure of the films using transmission electron microscopy and XRD. The preferred growth direction of Y2O3 grown by an ion beam changed completely from the 〈111〉 to the 〈110〉 orientation in order to minimize the overall energy of the film as the substrate temperature increased. In addition to the kinetic energy of the deposited atoms, oxygen partial pressure and the substrate surface state also bear a relationship to the change in the preferred growth direction. The crystalline growth of Y2O3 film depends on the state of the surface at the initial growth stage, whether the Si surface was first exposed to oxygen or yttrium. In particular, the silicon oxide layer which formed on the Si surface during the initial growth stage played an important role in the epitaxial growth as well as the preferred growth direction of Y2O3 film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369056
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  • 9
    Electronic Resource
    Electronic Resource
    Multiple valued floating potentials of Langmuir probes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5674-5677 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that Langmuir probes can have three different floating potentials in plasmas produced by a hot filament discharge in a multi-dipole device when the primary and secondary electron currents are comparable. The measured floating potential depends on the probe's initial condition—the most negative and the least negative potentials are found to be stable and the in-between value is found to be unstable. Results are compared to a simple theoretical model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340301
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 472-474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability and structural characteristics for gate stack structure of HfO2 dielectrics deposited by atomic-layer deposition (ALD) were investigated. The structural characteristics and chemical state of the HfO2 films in relation to the film thickness and postannealing temperature were examined by x-ray diffraction and x-ray photoelectron spectroscopy. An interfacial layer of hafnium silicate with an amorphous structure was grown on the oxidized Si substrate at an initial growth stage. The structural characteristics of the HfO2 films are closely affected by the interfacial layer and are depended on the thickness of the films. The 45 Å thick HfO2 film with an amorphous structure was changed into a polycrystalline structure after rapid temperature annealing of 750 °C for 5 min, while thicker films were grown into a polycrystalline structure of monoclinic or tetragonal crystal structure. The silicate layer grown at the interfacial region is not stable even at 700 °C under ultrahigh vacuum condition and changes into the silicide layers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1487923
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