Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 1887-1889
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial VSi2 has been successfully grown on (111)Si for the first time. Best epitaxy was found in samples substrate heated at 400 °C during electron gun deposition of V thin films, followed by 400–1000 °C two-step annealing in vacuum. The orientation relationships were determined to be (0001)VSi2(parallel)(111)Si, (224¯0)VSi2(parallel)(224¯)Si and (202¯0)VSi2(parallel)(202¯)Si. Interfacial dislocations were identified to be of edge type with (1)/(6) 〈112〉 Burgers vectors. The average dislocation spacing was measured to be about 250 A(ring). The disparity between calculated and measured values of dislocation spacing is attributed to the sharing of lattice mismatch between dislocations and elastic strains at the VSi2/Si interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334420
Permalink
|
Location |
Call Number |
Expected |
Availability |