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  • 1
    Electronic Resource
    Electronic Resource
    Surface-enhanced Raman scattering of adenosine triphosphate molecules (1989)
    s.l. : American Chemical Society
    Langmuir 5 (1989), S. 887-891 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00088a001
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  • 2
    Electronic Resource
    Electronic Resource
    Theoretical studies of molecular ions. Vertical detachment energy of OH^-
    Amsterdam : Elsevier
    Chemical Physics Letters 27 (1974), S. 499-502 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(74)80290-3
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical studies of molecular ions. Vertical ionization potentials of the nitrogen molecule
    Amsterdam : Elsevier
    Chemical Physics Letters 26 (1974), S. 296-300 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(74)85419-9
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  • 4
    Electronic Resource
    Electronic Resource
    Nano-oxidation of silicon nitride films with an atomic force microscope: Chemical mapping, kinetics, and applications (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2465-2472 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that local oxidation of silicon nitride films deposited on conductive substrates with a conductive-probe atomic force microscope (AFM) is a very promising approach for nanofabrication. Scanning Auger microscopy and spectroscopy are employed to verify the chemical changes after AFM-induced oxidation. Furthermore, the growth kinetics are found to have a logarithmic relationship of oxide height versus pulse duration [h∝ln(t/t0)]. In contrast to rather slow thermal oxidation process, AFM-induced oxidation on silicon nitride has an anomalously high initial oxidation rate (∼30 000 nm/s at 10 V) and a small onset time t0 (∼10 μs). As for the applications in ultrahigh-density recording, an oxide dot array (∼100 Gbit/in.2) produced by this process is demonstrated. The nitride film patterned by AFM can be utilized as an etching mask to fabricate "subtractive" silicon nanostructures, due to the large etching selectivity of Si3N4:SiO2:Si in various etchants. With this method, which is entirely compatible with the existing microelectronic processes, synthesis of ultrahigh packing density and ordered nanostructures could become readily achievable. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339212
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  • 5
    Electronic Resource
    Electronic Resource
    Local electric-field-induced oxidation of titanium nitride films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1090-1092 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123491
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  • 6
    Electronic Resource
    Electronic Resource
    Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2429-2431 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that silicon nanostructures with high aspect ratios, having ∼400 nm structural height and ∼55 nm lateral dimension, may be fabricated by scanning probe lithography and aqueous KOH orientation-dependent etching on the H-passivated (110) Si wafer. The high spatial resolution of fabricated features is achieved by using the atomic force microscope based nano-oxidation process in ambient. Due to the large (110)/(111) anisotropic ratio of etch rate and the large Si/SiO2 etch selectivity at a relatively low etching temperature and an optimal KOH concentration, high-aspect-ratio gratings with (111)-oriented structural sidewalls as well as hexagonal etch pit structures determined by the terminal etch geometry can be obtained. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125037
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  • 7
    Electronic Resource
    Electronic Resource
    Nanometer-scale conversion of Si3N4 to SiOx (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 360-362 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (〈5 nm) Si3N4 films to SiOx. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 103 nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiOx. Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si3N4, SiO2, and Si, AFM patterning of Si3N4 films can be a promising method for fabricating nanoscale structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125754
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  • 8
    Electronic Resource
    Electronic Resource
    Local electron field emission characteristics of pulsed laser deposited diamondlike carbon films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3504-3506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local electron field emission properties of diamondlike carbon (DLC) films were measured by a probe method in 1 atmosphere ambient pressure, using the modified scanning tunneling microscopic (STM) system, and the diode method. In the STM probe method, the field emission was turn on at a low bias as +2.67 V. A large emission current of 40 nA was attained at +7 volt bias voltage and the emission current density was estimated as Jt=5 A/cm2. By contrast, the current–voltage (I–V) characteristics of the same DLC films measured by diode method in 10−6 Torr ambient pressure revealed that the electron field emission was produced for a 13.2 V/μm electric field, and a high emission current density of J=160 μA/cm2 was obtained for a E=20 V/μm electric field. The geometrical enhancement factor (α), evaluated from the Fowler–Nordheim plot was around α=30, which is larger than what would be expected from a planar surface. This can be interpreted as the evidence that electrons are emitted locally from spherical SP3 clusters. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117226
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  • 9
    Electronic Resource
    Electronic Resource
    Analysis of the equation-of-motion theory of electron affinities and ionization potentials
    Amsterdam : Elsevier
    Chemical Physics 14 (1976), S. 145-158 
    Details
    ISSN: 0301-0104
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0301-0104(76)80033-X
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  • 10
    Electronic Resource
    Electronic Resource
    Gersdorffit (in zwei Strukturvarietäten) und Sb-hältiger Parkerit, Ni3 (Bi, Sb)2 S2, von der Zinkwand, Schladminger Tauern, Österreich (1979)
    Springer
    Mineralogy and petrology 26 (1979), S. 59-67 
    Details
    ISSN: 1438-1168
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Description / Table of Contents: Summary Ore petrologic investigations of a Ni-rich assemblage from the Ni−Co−Bi−(Ag)-deposit Zinkwand (Schladminger Tauern, Styria, Austria) resulted in the identification of gersdorffite, nickeline, pararammelsbergite, native bismuth, bismuthinite and the rate ore mineral parkerite, so far not recorded from that locality. Gersdorffite occurs as two distinctly different varieties M and I (reflectance, microhardness). Microprobe analyses show uniform composition of phase M, but compositional variations of phase I caused by strong zonal texture. Gersdorffite I probably represents gersdorffite with disordered structure with space groupPa3; gersdorffite M corresponds to the gersdorffite with space groupP213. Gersdorffite, nickeline and parkerite contain about 2 wt.% Sb. Sb-containing parkerite has not been reported from the four known occurrences of that mineral. Temperature of formation for the Ni-minerals has been estimated to be (considerably?) below 450°C, for the Bi-bearing minerals below 273°C.
    Notes: Zusammenfassung Erzpetrographische Untersuchungen von Ni-reichen Erzproben der Ni−Co−Bi−(Ag)-Lagerstätte Zinkwand (Schladminger Tauern, Steiermark) führten zum Nachweis einer Paragenese von Gersdorffit, Nickelin, Pararammelsbergit, ged. Wismut, Wismutglanz und Parkerit. Gersdorffit tritt in zwei deutlich voneinander verschiedenen (Reflexionsvermögen, Mikrohärte) Komponenten M und I auf. Mikrosondenanalysen zeigen einheitlichen Chemismus der Komponente M, hingegen unterschiedlichen der Komponente I, hervorgerufen durch starken Zonarbau. Gersdorffit I repräsentiert vermutlich Gersdorffit mit ungeordneter Struktur und RaumgruppePa3, Gersdorffit M hingegen vertritt Gersdorffit mit RaumgruppeP213. Gersdorffit, Nickelin und Parkerit weisen Gehalte von±2Gew.% Sb auf. Antimon-hältiger Parkerit ist von den bis heute nachgewiesenen vier Fundpunkten des Minerals nicht bekannt. Vorsichtige Abschätzung der Bildungstemperatur ergibt für die Gersdorffit-Nickelin-Pararammelsbergit-Assoziation sicher 〈450°C, für jene von Parkerit-ged. Wismut-Wismutglanz〈273°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01081291
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