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  • 1
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    Characterization of severe acute respiratory syndrome coronavirus genomes in Taiwan: Molecular epidemiology and genome evolution (2004)
    National Academy of Sciences
    Details
    Publication Date: 2004-02-11
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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  • 2
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    Hepatitis B virus X protein enhances androgen receptor-responsive gene expression depending on androgen level (2007)
    National Academy of Sciences
    Details
    Publication Date: 2007-01-26
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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  • 3
    Electronic Resource
    Electronic Resource
    The thermal dissociation of decaborane on Si(111)-(7×7) and doping effects in the near surface region (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3155-3160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal decomposition of decaborane (B10H14) and its doping effects on Si(111)-(7×7) has been investigated by surface spectroscopies. Upon adsorption between 100 and 300 K, molecular decaborane was identified on the surface by high-resolution electron-energy-loss spectroscopy (HREELS) by the absence of Si-H surface species production. The thermal decomposition of adsorbed decaborane molecules at higher temperatures involves a preferential removal of hydrogen from the weaker B—H—B linkage. H2 thermal desorption was observed to cover a wide temperature range between 300 and 900 K. Clean boron deposition on the surface was achieved at ∼900 K. Upon heating to ∼1275 K, extensive boron diffusion into bulk silicon produced a highly B-doped region below the surface (∼103 A(ring)) with a carrier hole concentration on the order of ∼1019 cm−3 depending upon the initial surface boron coverage and annealing conditions. The surface adopted a ((square root of)3×(square root of)3)R30° reconstruction with a nominal 1/3 ML boron occupying subsurface substitutional sites. Both the localized B-Si vibration and carrier surface plasmon excitation were observed by HREELS at 100 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351477
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  • 4
    Electronic Resource
    Electronic Resource
    Silicon nitride thin film production on Si(111) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4927-4931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The production of silicon nitride films by ammonia decomposition on Si(111)-(7×7) has been studied by high-resolution electron energy loss spectroscopy, Auger electron spectroscopy, and low-energy electron diffraction. Silicon nitride films of ≤1 monolayer thickness exhibit a characteristic four mode vibrational spectrum after annealing to 1200 K, while multilayer films produce three vibrational modes at 495, 720, and 1020 cm−1. Upon continued heating of the submonolayer and multilayer nitride films, identical vibrational spectra are obtained, suggesting that both layers form Si3N4. These results are in excellent agreement with the vibrational spectra reported in the literature for Si3N4 layers grown using N atoms on the heated Si(111)-(7×7) surface, signifying that identical nitride films can be grown using ammonia. Si3N4 films grown on Si(111) are able to chemisorb ammonia at 300 K, showing that coordinatively unsaturated silicon sites are probably present on the film surface. This is in agreement with other studies which indicate that the growth mechanism for these silicon nitride films involves silicon enrichment at the film/vacuum interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353810
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  • 5
    Electronic Resource
    Electronic Resource
    Inhibition of atomic hydrogen etching of Si(111) by boron doping (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2954-2957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111)-((square root of)3×(square root of)3)-R30° surface was studied using temperature programmed desorption (TPD), high-resolution electron energy-loss spectroscopy (HREELS), and low-energy electron diffraction. In comparison to the Si(111)-(7×7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111)-(7×7) surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349320
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  • 6
    Electronic Resource
    Electronic Resource
    Chlorine bonding sites and bonding configurations on Si(100)–(2×1) (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 8308-8323 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A combination of experimental methods has been employed for the study of Cl2 adsorption and reaction on Si(100)–(2×1). At 100 K, Cl2 adsorption occurs rapidly to a coverage of ∼0.7 Cl/Si. This is followed by slower adsorption kinetics with further Cl2 exposure. Two Cl adsorption states are observed experimentally. One of the adsorption states is terminally bonded Cl on the inclined dangling bond of the symmetric Si2 dimer sites, with a vibrational frequency, ν(SiCl) of 550∼600 cm−1. These bonded Cl atoms give four off-normal Cl+ ESDIAD emission beams from the orthogonal domains of silicon dimer sites. The Si–Cl bond angle for this adsorption configuration is estimated to be inclined 25°±4° off-normal. The second Cl adsorption state, a minority species, is bridge bonded Cl with ν(Si2Cl) of ∼295 cm−1 which produces Cl+ ion emission along the surface normal direction. Both adsorption states are present at low temperatures. Irreversible conversion from bridge bonded Cl to terminally bonded Cl begins to occur near 300 K; the conversion is complete near ∼673 K. LEED studies indicate that the (2×1) reconstruction for the substrate is preserved for all Cl coverages. The most probable Cl+ kinetic energy in electron stimulated desorption, ESD, is 1.1−+0.30.6 eV. A significant adsorbate-adsorbate quenching effect reducing the Cl+ ion yield in ESD occurs above a Cl(a) coverage of ∼0.5 ML (monolayer) due to interadsorbate interactions. The maximum Cl+ yield is about 4×10−7 Cl+/e at an electron energy of 120 eV. Temperature programmed desorption results show that SiCl2 is the major etching product which desorbs at about 840 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464536
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  • 7
    Electronic Resource
    Electronic Resource
    A comparative kinetic study of xenon adsorption on a flat Pt(111) and stepped Pt(557) and Pt(112) surfaces (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 7690-7699 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption and desorption kinetics for Xe on three Pt single crystalline surfaces have been measured using threshold temperature programmed desorption measurements. It has been found that the first-order desorption kinetic parameters at zero coverage for Xe on Pt(111) (E0d =5.73±0.50 kcal/mol; ν0d=1012.5±0.9 s−1) are in excellent agreement with measurements made by a modulated molecular beam method [E0d =5.65±0.35 kcal/mol; ν0d=1012.1 s−1]. The presence of step defect sites of varying density on Pt(557) (1/6 defects) and on Pt(112) (1/3 defects) is shown to have a marked influence on Xe desorption kinetics, producing larger values of E0d(approximately-equal-to)8.5–8.7 kcal/mol and larger values of ν0d (approximately-equal-to)1014 s−1 compared to Pt(111). In addition, for Pt(111), slight attractive Xe–Xe interactions are observed, whereas for Xe adsorption on step sites, repulsive Xe–Xe interactions are observed as the steps fill. Xe adsorption kinetics on Pt(111) at 87 K are consistent with an island growth mechanism. In contrast, on Pt(557) and Pt(112), the adsorption process does not seem to produce island growth on the terraces. These results, taken together, show that using Xe, defect sites on metals may be probed effectively with adsorption and desorption kinetic methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458155
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  • 8
    Electronic Resource
    Electronic Resource
    Surface oxidation as a diffusion barrier for Al deposited on ferromagnetic metals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5209-5214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing incidence x-ray reflectometry has been used to study surface oxidation as a diffusion barrier for Al deposited on ferromagnetic metals (Co, Fe, Ni, and Ni80Fe20). Samples of the form SiO2(backward-slash)10 nm X(backward-slash)4 nm Al with X=(Co, Fe, Ni, and Ni80Fe20) were investigated for X(backward-slash)Al intermixing. Surface oxidation was achieved by exposing the ferromagnetic layer to O2 to oxidize the top two or three atomic layers before depositing the Al layer. Specular x-ray scans were used for the analysis. Samples of the form SiO2(backward-slash)10 nm X(backward-slash)4 nm Au were used to separate topographical roughness from intermixing. Surface oxidation was found to suppress the diffusion of Al into Co, Ni, and Ni80Fe20 but not into Fe. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359151
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  • 9
    Electronic Resource
    Electronic Resource
    The stepwise dissociation of NH3 on the Si(111)–(7×7) surface: Low-temperature dissociative adsorption and thermal effects (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 7826-7837 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The molecular and dissociative adsorption of NH3 on a clean Si(111)–(7×7) surface has been studied using high-resolution electron-energy-loss spectroscopy (HREELS), Auger electron spectroscopy, and temperature-programmed desorption (TPD). All NHx (3≥x≥1) species have been observed vibrationally under varying experimental conditions. Adsorbed molecular ammonia is observed by both HREELS and TPD below 200 K. The absence of a strong δs(NH3) mode in our vibrational spectra suggests that NH3 is bound as a tilted species to the Si(111)–(7×7) surface. Ammonia exposures above 1.7×1014 NH3/cm2 at 110 K populate a weakly bound NH3(a) state which desorbs upon heating with a peak desorption temperature of 115 K. The NH2(a) species is observed to form at 80 K at all coverages and exhibits an enhanced thermal stability at higher ammonia exposures. The NH(a) species is detected above 200 K by an energy-loss feature at 1100 cm−1, which we assign to the δ(NH) mode. NH(a) is stable to 750 K on high coverage layers. Finally, we observe an increase in the Si–H stretching frequency as the concentration of NH(a) and N(a) species is increased by heating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462379
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  • 10
    Electronic Resource
    Electronic Resource
    Interfacial roughness effects on interlayer coupling in spin valves grown on different seed layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3023-3026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the behavior of interlayer coupling in giant magnetoresistance spin valves as a function of seed layer composition and spacer layer thickness. Using in situ scanning tunneling microscopy, we have measured directly the roughness of the top surface of the lower ferromagnetic layer. We find that the seed layer composition is correlated to the roughnesses of the interfaces inside the spin valve. Interlayer coupling increases with decreasing Cu spacer layer thickness and with increasing interfacial roughness. Results favorably compare to a topographically derived magnetostatic interaction as described by a modified version of Néel's "orange peel" model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372390
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