ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Reverse anneal phenomenon was observed in high current arsenic-implanted silicon samples and was pronounced with increasing implantation current. Noise measurements were used to study this phenomenon, the noise spectrum was composed of 1/f noise and generation-recombination (g-r) noise. The Hooge parameter α, usually a constant for the 1/f noise in homogeneous samples, was found to be a function of annealing temperature and the measured g-r noise values which may reflect the activation percentage of implanted atoms under different annealing temperatures were in good agreement with theoretical predictions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00702928
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