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  • 1
    Electronic Resource
    Electronic Resource
    Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 229-231 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si+ implant activation efficiencies above 90%, even at doses of 5×1015 cm−2, have been achieved in GaN by rapid thermal processing at 1400–1500 °C for 10 s. The annealing system utilizes molybdenum intermetallic heating elements capable of operation up to 1900 °C, producing high heating and cooling rates (up to 100 °C s−1). Unencapsulated GaN shows severe surface pitting at 1300 °C and complete loss of the film by evaporation at 1400 °C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 eV for AlN and 3.4 eV for InN). Encapsulation with either rf magnetron reactively sputtered or metal organic molecular beam epitaxy-grown AlN thin films provides protection against GaN surface degradation up to 1400 °C, where peak electron concentrations of ∼5×1020 cm−3 can be achieved in Si-implanted GaN. Secondary ion mass spectrometry profiling showed little measurable redistribution of Si, suggesting DSi≤10−13 cm2 s−1 at 1400 °C. The implant activation efficiency decreases at higher temperatures, which may result from SiGa to SiN site switching and resultant self-compensation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121764
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  • 2
    Electronic Resource
    Electronic Resource
    Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1091-1095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of n- and p-type GaN with Ti+, O+, Fe+, or Cr+ was found to produce defect levels which pinned the Fermi level in these materials at EC−(0.20–0.49) eV (n type) or EV+0.44 eV (p type). Maximum sheet resistances of ∼1012 Ω/(square, open) (n type) and ∼1010 Ω/(square, open) (p type) were obtained after implantation and annealing in the range of 300–600 °C. At higher annealing temperatures, the sheet resistance decreased to near the unimplanted values (3×104 Ω/(square, open) in p type, 7×102 Ω/(square, open) in n type). The evolution of the sheet resistance with annealing temperature is consistent with damage-related trap sites removing carriers from the conduction or valence bands. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371984
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  • 3
    Electronic Resource
    Electronic Resource
    The structural, chemical, and electronic properties of a stable GaS/GaAs interface (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6940-6944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A stable GaS passivating layer was deposited on GaAs using α-Ga2S3 powder as a single-source precursor. Both good crystal quality and clean GaS/GaAs interface were achieved. Electron-energy-loss spectra showed that the sulfide material has a band gap of 3.0 eV. The valence band discontinuity of the heterostructure was determined to be 1.9 eV from a series of ultraviolet photoelectron spectra with increasing deposition thickness. Al/GaS/GaAs metal-insulator-semiconductor structures exhibited typical high frequency capacitor versus voltage (C–V) behavior with very small loop hysteresis. The C–V curves showed no aging after 20 months. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371776
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4130-4132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky contacts were formed on n- and p-type GaN after either a conventional surface cleaning step in solvents, HCl and HF or with an additional treatment in (NH4)2S to prevent reformation of the native oxide. Reductions in barrier height were observed with the latter treatment, but there was little change in diode ideality factor. A simple model suggests that an interfacial insulating oxide of thickness 1–2 nm was present after conventional cleaning. This oxide has a strong influence on the contact characteristics on both n- and p-type GaN and appears to be responsible for some of the wide spread in contact properties reported in the literature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125559
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal stability of W and WSix contacts on p-GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 942-944 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing temperature (400–1100 °C) and measurement temperature (25–300 °C) dependencies of current–voltage characteristics of W and WSi0.45 contacts on p-GaN have been compared to the more common Ni/Au metallization. At 25 °C, slightly rectifying characteristics were obtained for all three types of contact, but at 300 °C specific contact resistances in the 10−2 Ω cm2 range were obtained for WSi0.45 and Ni/Au. This is due to an increase in Mg acceptor ionization efficiency (from 10% at 25 °C to 57% at 300 °C) and more efficient thermionic hole emission across the metal-GaN interface. Both WSi0.45 and W contacts retained featureless surface morphology for annealing at 〉900 °C, whereas Ni/Au showed substantial islanding at ≤700 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122046
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical effects of plasma damage in p-GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2569-2571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse breakdown voltage of p-GaN Schottky diodes was used to measure the electrical effects of high density Ar or H2 plasma exposure. The near surface of the p-GaN became more compensated through introduction of shallow donor states whose concentration depended on ion flux, ion energy, and ion mass. At high fluxes or energies, the donor concentration exceeded 1019 cm−3 and produced p-to-n surface conversion. The damage depth was established as ∼400 Å based on electrical and wet etch rate measurements. Rapid thermal annealing at 900 °C under a N2 ambient restored the initial electrical properties of the p-GaN. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125080
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  • 7
    Electronic Resource
    Electronic Resource
    Depth and thermal stability of dry etch damage in GaN Schottky diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 232-234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN Schottky diodes were exposed to N2 or H2 inductively coupled plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical etching, or (NH4)2S surface passivation treatments were examined for their effect on diode current–voltage (I–V) characteristics. We found that either annealing at 750 °C under N2, or removal of ∼500–600 Å of the surface essentially restored the initial I–V characteristics. There was no measurable improvement in the plasma-exposed diode behavior with (NH4)2S treatments. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124332
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  • 8
    Electronic Resource
    Electronic Resource
    Investigation of neutralized (NH4)2S solution passivation of GaAs (100) surfaces (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3081-3083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation photoelectron spectroscopy combined with scanning electron microscopy (SEM) and gravimetry has been used to study GaAs (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick Ga sulfide layer and strong Ga–S bond were formed on the GaAs surface after dipping GaAs wafers in a neutralized (NH4)2S solution. Gravimetric data show that the etching rate of GaAs in the neutralized (NH4)2S solution is about 15% slower than that in the conventional (NH4)2S solution. From SEM observation, fewer etching pits with smaller sizes were found on the neutralized (NH4)2S-treated GaAs surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120252
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  • 9
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    Thermal stability of W and WSix contacts on p-GaN (1998)
    American Institute of Physics
    Details
    Publication Date: 1998-08-17
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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  • 10
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    Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN (1999)
    American Institute of Physics
    Details
    Publication Date: 1999-12-27
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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