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  • 1
    Electronic Resource
    Electronic Resource
    The physical origin of InAs quantum dots on GaAs(001) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 783-785 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose that large heteroepitaxial stress causes InAs to melt when deposited on GaAs(001) at approximately 770 K. This leads to mixing with the substrate in order to realize a local minimum in the Gibbs free energy of the liquid phase, producing an approximate liquid composition of In0.8Ga0.2As.The liquid phase facilitates mass transport, leading to quantum dot formation. Dot formation occurs after 2.0 monolayers of liquid material accumulate in order to minimize the surface tension but without reducing the net coordination of the liquid phase atoms. Ge quantum dots on Si(001) are also discussed, and the influence of viscosity effects is inferred. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120892
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of the crystallographic orientation of cubic media to high resolution using optical harmonic generation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6072-6078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the tensorial characteristic of optical harmonic generation it is shown that the crystallographic orientation of centrosymmetric and noncentrosymmetric cubic media can be determined to within ±0.1°. As an illustration of the technique the orientation of vicinal GaAs(001) and Si(111) single-crystal wafers is obtained using second- and third-harmonic generation, respectively, with a continuously mode-locked Ti:sapphire laser operating at 775 nm. Intensity measurements were taken as a function of the wafer azimuthal angle and are fit to a truncated Fourier series derived from a phenomenological theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355223
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  • 3
    Electronic Resource
    Electronic Resource
    Addendum to "Determination of the crystallographic orientation of cubic media to high resolution using optical harmonic generation'' [J. Appl. Phys. 74, 6072 (1993)] (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3937-3938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations of the optical harmonic response of cubic centrosymmetric and noncentrosymmetric media with arbitrary facial orientation are extended to the general case of s- or p-polarized fun- damental beam radiation and s- or p-polarized harmonic beam radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357410
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  • 4
    Electronic Resource
    Electronic Resource
    Kinetics of oxygen adsorption, absorption, and desorption on the Cu(111) surface (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 9167-9176 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The interaction of oxygen with the Cu(111) surface in ultrahigh vacuum (UHV) has been studied in the temperature range 400〈T〈800 K using second-harmonic generation (SHG) and x-ray photoelectron spectroscopy (XPS). When the clean surface is exposed to oxygen at pressures between 5×10−8 and 10−5 Torr and for T〈500 K, the SHG intensity decreases monotonically with exposure by more than one order of magnitude to a value which has no measurable temperature dependence. For T(approximately-greater-than)500 K, the SHG intensity passes through a minimum before achieving this constant value. The observation of this minimum is interpreted in terms of an outward relaxation of the Cu(111) surface as oxygen penetrates the subsurface region. When UHV conditions are restored for T(approximately-greater-than)600 K, the SHG intensity reverses its temporal dependence. These observations are consistent with initial incorporation of atomic oxygen into the subsurface region at a rate which is dependent on surface temperature and oxygen pressure and subsequent backdiffusion in UHV, driven by the oxygen concentration gradient near the surface. From experiments performed at different oxygen pressures and sample temperatures we establish rate constants for oxygen incorporation and surface outward relaxation as a function of temperature. The kinetics of oxygen incorporation determined from changes in the SHG intensity are compared with those derived elsewhere from ellipsometry studies. Differences yielded by the two experimental techniques are related to differences in monitored depths. Complementary XPS experiments suggest that sites occupied by the subsurface oxygen are characterized by tetrahedral symmetry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464424
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  • 5
    Electronic Resource
    Electronic Resource
    Strain distribution control on the silicon wafer scale for advanced nanostructure fabrication (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1073-1075 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Looking to the long-term future of Si semiconductor technology, we propose, fabricate, and demonstrate strain distribution control on the planar Si wafer scale for advanced nanostructure self-assembly. Oxygen ions are implanted through patterned layers on the Si wafer; the sample is then annealed at 1325 °C to produce bulk oxide inclusions which yield a strain distribution. Strained epitaxial growth of Ge on the Si(001) substrate surface at 550 °C in ultrahigh vacuum produces three-dimensional islands whose location and size distribution are well controlled. The degree of localization control is in agreement with simulations of the elastic strain distribution. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448855
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  • 6
    Electronic Resource
    Electronic Resource
    Comment on "SiGe intermixing in Ge/Si(100) islands" [Appl. Phys. Lett. 78, 303 (2001)] (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1060-1060 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394168
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  • 7
    Electronic Resource
    Electronic Resource
    Linear and nonlinear optical properties of CuInSe2 and CuGaSe2 epitaxial thin films on GaAs(001) (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 817-824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linear and nonlinear optical properties of tetragonal CuInSe2 and CuGaSe2 thin films grown epitaxially on GaAs(001) have been investigated as a function of film stoichiometry. The refractive indicies of the films have been measured between 250 and 800 nm using ellipsometry. For a fundamental wavelength of 790 nm, the second order optical nonlinearity χ(2) and optical third harmonic field anisotropy σ are typically reduced strongly in nonstoichiometric thin films and correlate well with each other. The magnitudes of the chalcopyrite film χ(3) values are relatively small, being typically only ∼1% of those of Si. Third harmonic data from an approximately stoichiometric CuInSe2 thin film is consistent with a significant second order surface optical nonlinearity cascading contribution. Spectral features in the room temperature refractive index data from approximately stoichiometric CuInSe2 and CuGaSe2 thin films correlate well with previous experimental work. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365778
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  • 8
    Electronic Resource
    Electronic Resource
    Second harmonic generation from SimGen superlattices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2324-2326 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of optical second harmonic generation (SHG) from SimGen short-period superlattices grown on different substrates. For a 775 nm fundamental beam, the SHG signals from odd-odd, even-even, and even-odd specimens are comparable, apart from substrate-dependent strain enhancement. It is concluded that the lack of a large bulk dipole-allowed signal in odd-odd superlattices predicted by Ghahramani, Moss, and Sipe [Phys. Rev. Lett. 64, 2815 (1990)] is due to the inevitable presence of monatomic steps on the substrate which lead to antiphase domains; a possible circumvention of this limitation is outlined based on the use of a single domain vicinal Si(001) substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110514
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  • 9
    Electronic Resource
    Electronic Resource
    Degradation of the second order optical nonlinearity in cubic media by straight dislocations (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3682-3684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of straight dislocations on the second order nonlinear optical susceptibility χ(2) of cubic noncentrosymmetric media has been modeled. The resulting degradation of χ(2) has been evaluated for screw and edge dislocations in GaAs. It is found that single screw and edge dislocations reduce the χ(2) of GaAs by a third and ∼60%, respectively. This implies that second order nonlinear optical effects are very sensitive to misfit dislocation generation in epitaxially grown noncentrosymmetric media and that dislocation-free epilayers are required to realize the optimum χ(2). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114926
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of the composition of strained tetragonal epilayers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 761-763 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elasticity theory is applied to calculate the total strain present in a tetragonal symmetry epilayer due to heteroepitaxial misfit. By relating pseudobinary alloy composition to the lattice constants of the epilayer, it is shown that the composition of a pseudobinary epilayer can be determined from measurement of the strained epilayer lattice constants. This is accomplished by expressing the misfit strain in terms of the composition and the individual lattice constants of the components of the epilayer and using Vegard's rule. As a result, determination of the composition of two chalcopyrite symmetry epilayers from x-ray diffraction measurements is demonstrated. The approach presented here is general and can be applied to any substrate-epilayer combination in the elastic limit. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117883
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