Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
81 (2002), S. 760-762
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the electrical characterization of various types of nanocontacts fabricated by nanoindentation and electrodeposition. Arrays of holes with depths ranging from 0 to 20 nm were produced by nanoindenting at different strengths an Al2O3-50 Å/NiFe-150 Å//Si bilayer. NiFe was then electrodeposited, which led to the growth of particles in the holes. The resistance of the particles was measured with a conducting tip atomic force microscope. Depending on the strength used during the nanoindentation, the resistance ranges from less than 5×103 Ω to more than 1012 Ω. The low-resistance constrictions can be used to study ballistic transport in materials. High-resistance contacts presumably correspond to tunnel nanojunctions. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1495524
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