Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1236-1238
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Scanning transmission ion microscopy (STIM) has been used, in conjunction with channeling, to explore transmission channeling in 50-μm-thick epitaxially grown n-type silicon with 3.9 MeV H+ beam currents of 0.1 fA focused to spot sizes of less than 200 nm. The technique is extremely efficient, causes negligible damage, and is capable of very high resolution. High-resolution images of crystal damage were obtained with this first demonstration of channeling contrast in STIM.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102524
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