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  • 1
    Electronic Resource
    Electronic Resource
    The Nuclear Microprobe (1992)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Nuclear and Particle Science 42 (1992), S. 1-38 
    Details
    ISSN: 0163-8998
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ns.42.120192.000245
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  • 2
    Electronic Resource
    Electronic Resource
    Microcircuit imaging using an ion-beam-induced charge (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2097-2104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ionizing radiation such as photons, keV electrons, or MeV ions can generate electron-hole pairs in semiconducting material. The high penetrating power of MeV light ions allows them to generate electron-hole pairs from deep within intact microelectronic devices, so images can be formed of the device active areas with very little degradation of the spatial resolution of the focused MeV ion beam. Furthermore, the ion-beam-induced charge (IBIC) image contrast is not strongly affected by the energy loss through the overlying device layers. This article is the first to demonstrate the capability of a nuclear microprobe to generate IBIC images of the active regions of devices through the passivation and metallization layers. The effect of the carrier generation volume on IBIC resolution is assessed. The ability of IBIC to align the major crystal axes of semiconductor samples is shown, and the effect of ion-induced damage on IBIC image contrast is considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351596
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  • 3
    Electronic Resource
    Electronic Resource
    A theory of ion beam induced charge collection (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3789-3799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ion beam induced charge technique can image the depletion regions of microelectronic devices through their thick metallization and passivation layers, and buried dislocation networks in semiconductor material by measuring the number of charge carriers created by a focused MeV light ion beam scanning over the sample surface. In this paper it is shown how the charge pulse height can be calculated in terms of the ion type and energy, and the minority carrier diffusion length. The effect of surface layers, depletion layers, ion induced damage, and ion channeling on the measured charge pulse height are also considered. It is shown how this approach can be used to simulate the charge pulse height reduction due to ion induced damage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354471
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  • 4
    Electronic Resource
    Electronic Resource
    Optimization of ion-beam induced charge microscopy for the analysis of integrated circuits (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3734-3741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions necessary for obtaining both the maximum topographical image contrast and the maximum insensitivity to ion induced damage using ion-beam induced charge microscopy are presented and interpreted in terms of existing energy loss and damage theory. Ion-beam induced charge images and pulse-height spectra which are measured from a Sandia SA3002 memory device using MeV H+, H+2, and 4He+ ions with a range of incident energies are used to characterize these optimum experimental conditions. It is shown that ions which are stopped within the device depletion layers generate charge pulses which are much less sensitive to ion induced damage than longer range ions which are stopped in the device substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358613
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  • 5
    Electronic Resource
    Electronic Resource
    Dislocation imaging using transmission ion channeling (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2640-2653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface dislocations present in a Si0.85Ge0.15/Si sample have been imaged using the channeling scanning transmission ion microscopy (CSTIM) method with a 2 MeV proton beam 200 nm across. Groups of parallel dislocations gave dark bands of contrast down to ∼1.5 μm across, the contrast arising from dechanneling of the beam by the bent lattice planes. Tilting of the sample caused the band contrast to change and gave quantitative data concerning the local bending of the lattice planes. A low-angle boundary model was developed to describe the effect of the groups of dislocations on the channeling contrast. Channeling and topography contrast were obtained from mesa structures present on the sample. Improvements in the sensitivity of the CSTIM method are discussed. The dislocations in the sample were initially characterized by transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353081
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  • 6
    Electronic Resource
    Electronic Resource
    The use of "mixed'' beams in microprobe imaging (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2940-2946 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article will demonstrate the production and application of "mixed'' beams for a magnetically focused nuclear microprobe. A "mixed'' beam is defined as any two beams of ions of different species, or energy, or both that can be quickly and easily made to have the same magnetic rigidity (Rm) so that they transport, focus, and scan the same in a magnetic nuclear microprobe. Two techniques for the production of such beams will be presented. These methods include the extraction of different ions from the same source and scanning the terminal potential to produce the same Rm, and the use of a postacceleration stripper to change the charge state of one ion species to give it the same Rm as another ion species. The application of mixed beams to ion beam induced charge, scanning transmission ion microscopy, and ion microlithography will also be presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147076
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  • 7
    Electronic Resource
    Electronic Resource
    Imaging of charge transport in polycrystalline diamond using ion-beam-induced charge microscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 913-915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies have been made using a 1 μm spatial resolution ion-beam-induced charge (IBIC) technique of the charge transport distribution in polycrystalline diamond produced by chemical vapor deposition. The devices tested used a coplanar electrode structure fabricated only on the growth side of the diamond film, and were predominantly sensitive to charge transport close to the growth surface of the diamond film where the diamond crystallites are largest. Irradiation with 5.48 MeV alpha particles gave a pulse height spectrum with a broad full energy peak and a mean charge collection efficiency of 15%. IBIC images obtained using microfocus proton and alpha particle beams showed spatially resolved regions of high charge collection efficiency correlating to individual diamond crystallites with a typical width of 20 μm, as observed by secondary electron microscopy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306259
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  • 8
    Electronic Resource
    Electronic Resource
    Study of the crystalline quality of exfoliated surfaces in hydrogen-implanted silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 268-270 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen-implanted "Smart-Cut®" silicon is attracting considerable interest for silicon on insulator applications in high-speed, low-power microelectronics. To optimize the fabrication process the mechanisms of bubble growth, defect formation and the origin of the residual surface roughness and damage must be studied under a variety of implantation and annealing conditions. This letter describes the analysis of the crystalline quality of the surfaces of exfoliated bubbles and delaminated layers in hydrogen-implanted silicon. Transmission and backscattering ion channeling are used to observe the separate contributions of lattice damage and internal gas pressure to the exfoliation process. Significant additional damage occurs during the exfoliation/delamination process, which is attributed to mechanically induced plastic deformation of the surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126946
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  • 9
    Electronic Resource
    Electronic Resource
    Manipulation of ion channeling patterns using magnetic quadrupole lenses (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2132-2134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter demonstrates that ion channeling patterns, produced by the passage of 3 MeV protons through a 0.5 μm thick [001] silicon crystal, can be transported and manipulated to produce enlarged or reduced area patterns using magnetic quadrupole lenses. The different effects on the ion channeling patterns obtained by using single quadrupole lenses and quadrupole multiplets are shown. The maximum attainable magnification under present conditions is investigated and a fundamental limitation to this process is identified as being the energy spread gained by the proton beam as it passes through the crystal. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114743
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  • 10
    Electronic Resource
    Electronic Resource
    Sensitivity of ion induced charge pulses to the electrical and crystallographic properties of 60° dislocations (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3227-3229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports evidence that the size of MeV ion induced charge pulses measured from epitaxial Si0.875Ge0.125/Si depends on both the crystallographic and electrical properties of the 60° misfit dislocations present. The results are correlated with both backscattered and transmission ion channeling analysis. With the sample in nonchanneled alignment the measured ion induced charge pulses depend on the number of charge carriers which recombine at the dislocations. With the sample in channeled alignment the rotated (110) and (11¯0) planes around the 60° dislocations affect the local rate of carrier generation and so alter the size of the measured ion induced charge pulses. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112420
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