ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Mechanism on the formation of two-dimensional electron gas (2DEG) at the interface of undoped AlxGa1−xN with undoped GaN was interpreted through surface band bending observed using synchrotron radiation photoemission spectroscopy. The surface Fermi level was independent of AlxGa1−xN thickness and Al content in AlxGa1−xN, showing Fermi pinning to surface states at 1.6 eV below conduction band minimum. Oxygen donor impurities in undoped AlxGa1−xN, unintentionally doped during the growth, led to the formation of large density of 2DEG (〉∼1013/cm3) at the AlxGa1−xN/GaN interface via electron generation. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1501162
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