ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Classroom Innovation: Games to Make Chemistry More Interesting and Fun (2000)
    Springer
    The chemical educator 5 (2000), S. 167-170 
    Details
    ISSN: 1430-4171
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Many students of agronomy engineering, who are required to take organic chemistry, find the class unpleasant and uninteresting because they feel forced to learn concepts that they regard as irrelevant to their career plans. When this lack of motivation is combined with limited self-discipline, students don’t study and, thus, fail to learn the subject. This paper presents a method of adapting the course materials and methodology to the student’s needs by the inclusion of appropriate games. These games help to create a less formal atmosphere and add variety to the class, and they can even be used as methods of evaluation. Students exposed to this method are more apt to experiment and participate freely in class.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s00897000393a
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    T helper and T suppressor cells are restricted by the A and E molecules, respectively, in the F antigen system (1985)
    Springer
    Immunogenetics 22 (1985), S. 169-175 
    Details
    ISSN: 1432-1211
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract The role of the A and E molecules as restriction elements was examined in the F antigen system. In the mouse the only responder haplotype known to date isk, and blocking studies with a monoclonal antibody show that in vitro T-cell proliferation is restricted by the Ak molecule. The (CBA × DBA/2) F1 hybrid, which is a responder x nonresponder cross, is itself a nonresponder in terms of E-specific antibody production. Up to 10 days after priming, (CBA × DBA/2) F1 T cells exhibited an E-specific proliferative response, but this diminished rapidly at later times. This diminution could be blocked with an E-specific monoclonal antibody, suggesting that suppression is restricted by the E molecule.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00563514
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Wage policy in high inflation countries: The role of indexation in Latin America during the 1980s (1997)
    [S.l.] : Emerald
    Journal of economic studies 24 (1997), S. 356-378 
    Details
    ISSN: 0144-3585
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Economics
    Notes: During the 1980s Latin America's inflation problem worsened and successive stabilization programmes failed in many countries. This led to an increasing concern about the degree of rigidity imposed on the economy by different labour market structures built up over many decades. Wage indexation, in particular, was often blamed for the failure of stabilization and adjustment programmes. Examines the different components of an indexing system and assesses the degree of flexibility that the systems implemented in some countries brought to the labour market. While a particular indexing system may have the effect of reducing wage flexibility in certain periods, the analysis of data at the macro level shows that in the long term wage indexation has not been insurmountable obstacle. Stresses that wage determination is just one of the key processes with a substantial influence on inflation. In the case of high inflationary countries, the existence of various key prices draw attention to the need for co-ordination in the adjustment of different prices during the application of a stabilization programme.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/01443589710185914
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Intramolecular Electron Transfer Reactions Catalyzed by .alpha.-Oxo and .beta.-Oxo Substituents in the 1-Chlorobicyclo[2.2.1]heptane System (1995)
    s.l. : American Chemical Society
    The @journal of organic chemistry 60 (1995), S. 1000-1004 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00109a035
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Fast neurotransmitter release triggered by Ca influx through AMPA-type glutamate receptors (2006)
    [s.l.] : Nature Publishing Group
    Nature 443 (2006), S. 705-708 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Feedback inhibition at reciprocal synapses between A17 amacrine cells and rod bipolar cells (RBCs) shapes light-evoked responses in the retina. Glutamate-mediated excitation of A17 cells elicits GABA (γ-aminobutyric acid)-mediated inhibitory feedback onto RBCs, but the mechanisms that ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature05123
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Self-assembly of amphiphilic dendritic dipeptides into helical pores (2004)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 430 (2004), S. 764-768 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Natural pore-forming proteins act as viral helical coats and transmembrane channels, exhibit antibacterial activity and are used in synthetic systems, such as for reversible encapsulation or stochastic sensing. These diverse functions are intimately linked to protein structure. The close link ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02770
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Observation of high-energy neutrinos using Čerenkov detectors embedded deep in Antarctic ice (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 410 (2001), S. 441-443 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Neutrinos are elementary particles that carry no electric charge and have little mass. As they interact only weakly with other particles, they can penetrate enormous amounts of matter, and therefore have the potential to directly convey astrophysical information from the edge of the Universe ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35068509
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1187-1192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing processes on the properties of SiO2.0 and SiN1.55 films was studied. The films were deposited at room temperature from N2 and SiH4 gas mixtures, and N2, O2, and SiH4 gas mixtures, respectively, using the electron cyclotron resonance technique. The films were characterized by Fourier transform infrared spectroscopy (FTIR) and electron paramagnetic resonance spectroscopy. According to the FTIR characterization, the SiO2.0 films show continuous stress relaxation for annealing temperatures between 600 and 1000 °C. The properties of the films annealed at 900–1000 °C are comparable to those of thermally grown ones. The density of defects shows a minimum value for annealing temperatures around 300–400 °C, which is tentatively attributed to the passivation of the well-known E′ center Si dangling bonds due to the formation of Si–H bonds. A very low density of defects (5×1016 cm−3) is observed over the whole annealing temperature range. For the SiN1.55 films, the highest structural order is achieved for annealing temperatures of 900 °C. For higher temperatures, there is a significant release of H from N–H bonds without any subsequent Si–N bond healing, which results in degradation of the structural properties of the film. A minimum in the density of defects is observed for annealing temperatures of 600 °C. The behavior of the density of defects is governed by the presence of non-bonded H and Si–H bonds below the IR detection limit. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371996
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx:H/Si devices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1573-1581 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk properties of SiNx:H thin film dielectrics and interface characteristics of SiNx:H/Si devices are studied by a combination of electrical measurements (capacitance–voltage and current–voltage characteristics) and defect spectroscopy (electron spin resonance). The SiNx:H films were deposited by an electron cyclotron resonance plasma method and subjected to rapid thermal annealing postdeposition treatments at temperatures between 300 and 1050 °C for 30 s. It is found that the response of the dielectric to the thermal treatments is strongly affected by its nitrogen to silicon ratio (N/Si=x) being above or below the percolation threshold of the Si–Si bonds in the SiNx:H lattice, and by the amount and distribution of the hydrogen content. The density of Si dangling bond defects decreases at moderate annealing temperatures (below 600 °C) in one order of magnitude for the compositions above the percolation threshold (nitrogen rich, x=1.55, and near stoichiometric, x=1.43). For the nitrogen rich films, a good correlation exists between the Si dangling bond density and the interface trap density, obtained from the capacitance measurements. This suggests that the observed behavior is mainly determined by the removal of states from the band tails associated to Si–Si weak bonds, because of the thermal relaxation of the bonding strain. At higher annealing temperatures the deterioration of the electrical properties and the increase of the Si dangling bonds seem to be associated with a release of trapped hydrogen from microvoids of the structure. For the silicon rich samples rigidity percolates in the network resulting in a rigid and strained structure for which the degradation phenomena starts at lower temperatures than for the other two types of samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380992
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1906-1913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost at annealing temperatures below 600 °C without any change in the oxygen to silicon ratio of the films. The activation energy of the hydrogen release is in the 0.21–0.41 eV range independently of film composition, suggesting that the process occurs via network bond reactions. For annealing temperatures higher than 700 °C, a change in the Si–O–Si stretching wave number from the initial unannealed value to the 1070–1080 cm−1 range was promoted, independently of the initial film composition. Electron spin resonance measurements showed that all the films contain two type of bulk paramagnetic defects: the E′ center (•Si(Triple Bond)O3) and the silicon dangling bond center (•Si(Triple Bond)Si3). The RTA process promotes a general decrease of defect concentration for annealing temperatures below 400 °C. At higher temperatures, E′ center disappears, and the •Si(Triple Bond)Si3 center increases its concentration up to the 1017–1018 cm−3 range. This suggests that the RTA at higher temperatures promotes the formation of a high-quality, almost defect-free, SiO2 matrix in which highly defective Si nanocrystals are also formed, where the •Si(Triple Bond)Si3 centers are located. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1495068
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...