Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 494-496
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A silicon surface tunneling transistor structure, based on lateral band-to-band tunneling, is presented. The theory, fabrication, and operation of the device is described. Band-to-band tunneling is controlled by the bias on the gate of the device which modulates the width of the tunneling barrier. The operation of the device is confirmed in both experimental results and two-dimensional computer simulations. Dramatic differences in drain current are observed for different gate bias. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114547
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