Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Advances in science and technology
Vol. 48 (Oct. 2006), p. 1-8
ISSN:
1662-0356
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Natural Sciences in General
,
Technology
Notes:
We have succeeded to grow high quality phosphorus doped n-type diamond thin films on{111} diamond substrates. Although the ionization energy of phosphorus donor is large (0.57 eV),the n-type conductivity is clearly observed by Hall measurements. The Hall mobility is as high as660 cm2/V-sec at room temperature. In this paper, current status of n-type diamond research arementioned mainly focused on the growth of high mobility n-type diamond and its electricalproperties. High quality diamond growth has been carried out by surface pre-treatment of diamondsubstrate. The Hall measurements performed in a wide temperature range gives detailed informationabout the n-type conductivity nature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.48.1.pdf
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