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  • 1
    Electronic Resource
    Electronic Resource
    Theoretical study of the Pd-B complex in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7139-7141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results for the electronic structure of the interstitial Pd-substitutional B complex in silicon. The self-consistent field calculations were performed within the framework of scattered-wave Xα cluster method. Compared with the electronic structures of the isolated substitutional B in silicon and of the isolated interstitial Pd in silicon, we found that the shallow acceptor B impurity state is deepened by the perturbation from the Pd atom. The ionic model, which is currently accepted to describe interstitial 3d transition metal-III A group shallow acceptor impurity pair, is not quite suitable to deal with the system of Pd-B complex in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344537
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  • 2
    Electronic Resource
    Electronic Resource
    Identification of the energy levels of Si:Rh (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2251-2255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two thermostable levels E(0.31) and E(0.58) related to Rh in Si were observed using deep level transient spectroscopy and double correlation deep level transient spectroscopy techniques. By means of thermal annealing and electron irradiation, the microscopic natures of these levels were identified for the first time. The levels E(0.31) and E(0.58) arise from by the same impurity center but have different charge states. Their microstructures are not related to a pure substitutional Rh atom, but correspond to a complex. This result is compared to our self-consistent theoretical calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348704
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  • 3
    Electronic Resource
    Electronic Resource
    Physical behavior of ruthenium in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2746-2748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the physical behavior of Ru atom in silicon in this paper. Two energy levels E(0.58) and H(0.34) were observed. The pure substitutional Ru in silicon was responsible for the H(0.34), and the E(0.58) was introduced by a complex of a Ru atom and a vacancy (or vacancies). By use of scattered wave-Xα (SW-Xα) cluster method the theoretical calculation of electronic states for substitutional Ru atom in silicon has been performed. The results obtained were compared with those of experimental measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348632
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  • 4
    Electronic Resource
    Electronic Resource
    A variant in CDKAL1 influences insulin response and risk of type 2 diabetes (2007)
    [s.l.] : Nature Publishing Group
    Nature genetics 39 (2007), S. 770-775 
    Details
    ISSN: 1546-1718
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Medicine
    Notes: [Auszug] We conducted a genome-wide association study for type 2 diabetes (T2D) in Icelandic cases and controls, and we found that a previously described variant in the transcription factor 7-like 2 gene (TCF7L2) gene conferred the most significant risk. In addition to confirming two recently identified ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/ng2043
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  • 5
    Electronic Resource
    Electronic Resource
    Refining the impact of TCF7L2 gene variants on type 2 diabetes and adaptive evolution (2007)
    [s.l.] : Nature Publishing Group
    Nature genetics 39 (2007), S. 218-225 
    Details
    ISSN: 1546-1718
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Medicine
    Notes: [Auszug] We recently described an association between risk of type 2diabetes and variants in the transcription factor 7-like 2 gene (TCF7L2; formerly TCF4), with a population attributable risk (PAR) of 17%–28% in three populations of European ancestry. Here, we refine the definition of the TCF7L2 type ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/ng1960
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructure Prediction of Hot-Deformed Aluminium Alloys (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 367 (Feb. 2008), p. 107-116 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this paper, a deformation test method to reproduce, on a laboratory scale, themicrostructure evolution of aluminium alloys occurring during industrial forming processes with alimited number of tests is presented. A hot inverse extrusion setup was designed in order togenerate, inside one single specimen, a wide range of strains at a given temperature and ram speed.Two commercial aluminium alloys (AA6060 and AA6082) were investigated at different processingconditions (temperatures and forming rates). Detailed optical microstructures were examined andgrain sizes were determined at different spots of each specimen. Thermo-mechanical coupledsimulations of the deformation tests were performed using the DEFORM 3D FEM code. On thebasis of recrystallization equations, the distributions of strains, strain rates and temperatures werecorrelated to the grain sizes measured through linear regression. Finally, FEM simulations were runagain with the established recrystallization model, and the results were compared with theexperimental data
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.367.107.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    FE Simulation of Extrusion to Produce a Thin-Walled Wide Profile through a Spreading Pocket Die (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 367 (Feb. 2008), p. 63-70 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In the present case study, finite element (FE) simulation was performed to evaluate thedesign of a spreading pocket die by analysing the metal flow during the extrusion of the 6061 alloy toproduce a thin-walled wide profile for ground transportation applications. The results obtained fromthe FE simulation were in good agreement with those from industrial extrusion trials. The velocityand temperature non-uniformities on the profile cross section, revealed from the FE simulation,suggested the die bearing area for die correction. The FE simulation also showed that ram speed hadlittle influence on the velocity non-uniformity but a marked effect on the temperature and temperaturedistribution of the profile. In the case of extrusion through the spreading pocket die, more heatdissipation from the hotter billet to the die took place, especially when ram speed was low. Therefore,to reach a temperature sufficient for the dissolution of Mg and Si, ram speed must be raised. The FEsimulation in the transient state of the extrusion process could give an indicative ram speed for trialextrusion to reach a sufficiently high temperature for the solution treatment on the one hand and toavoid hot shortness on the other hand. It also showed that ram speed had a moderate effect on thebreakthrough pressure. Therefore, in the selection of ram speed, attention should be paid to its effecton the maximum profile temperature and temperature distribution
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.367.63.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Controlled Plasma Nitriding for an Optimum Balance between PACVD TiBN Coating Scratch Resistance and Substrate Toughness (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 373-374 (Mar. 2008), p. 312-317 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The plasma nitriding (PN) process in the duplex surface treatment was controlled to createnitrided diffusion layers with depths of 0, 5, 15 and 80 m in the substrate of the DIN 1.2367 hot-worktool steel with the maximum microhardness values of 600, 700, 820 and 1000 HV, respectively. Thescratch properties, i.e. the critical loads of cohesion (LC1), adhesion (LC2), breakthrough (LC3) andworn out (LC4), of the PACVD TiBN coating (boride, 5-7 at.%) on these substrates increased linearlywith the maximum hardness of the PN diffusion layer. Instead of the composite hardness, the peakscratch hardness was used to describe the load-carrying capacity of the TiBN coating and PN substrate.Deep tensile cracks in the PN substrate with a hardness value of 1000 HV formed during the scratchtest at a load as low as 90 N, indicating the low fracture toughness of the substrate. Therefore, anoptimum balance between the scratch properties of the coating and the good fracture toughness of thenitrided substrate must be achieved through exercising the control of the PN and PACVD duplexprocess
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/57/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.373-374.312.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Analysis of Metal Flow through a Porthole Die to Produce a Rectangular Hollow Profile with Longitudinal Weld Seams (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 367 (Feb. 2008), p. 145-152 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A detailed analysis of metal flow through a porthole die to produce a rectangular hollowaluminium profile was performed by means of three-dimensional FE simulation using DEFORM3D. It was aimed at revealing the flow patterns of a medium-strength aluminium alloy 7020 througha porthole die and gaining an insight into the formation of longitudinal weld seams inside thewelding chamber during extrusion. In the case of extruding a rectangular hollow profile through aporthole die with four ports, two neighbouring ports were different from each other. Using an FEmodel including these two ports, different flow patterns of two individual metal streams wererevealed. The 3D FE simulation also showed how two unequal metal streams contacted each otherand became bonded in the welding chamber under a certain hydrostatic pressure and at a certaintemperature, before the metal flew through the die bearing. The difference in velocity between themetal streams led to uneven flow at the die bearing and thus a wavy extrusion nose
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.367.145.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Simulation-Based Design of Ram Speed Profile for Isothermal Extrusion (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 367 (Feb. 2008), p. 153-160 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Isothermal extrusion is a very much desired technology. However, its implementation inthe light-metal extrusion practice has, up till now, been technologically constrained. In an attempt torealise isothermal extrusion, a simulation model based on the PID control algorithms was developedto establish ram speed profiles that could prevent extrudate temperature from further increase after aninitial rise during an extrusion cycle. With this simulation model, extrusion ram speed could beadjusted in real time according to the simulated exit temperature. A case study was conducted on thesimulated extrusion of a magnesium alloy AZ31B into a hollow profile. The results showedsignificantly improved temperature homogeneity not only along the extrudate length but also on itscross section in the case of extrusion in the isothermal mode with a designed ram speed profile. Inaddition, die temperature varied over a narrower range and the force acting on the die face was morestable over the process cycle, in comparison with extrusion in the conventional iso-speed mode
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.367.153.pdf
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