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  • 1
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    A simple rule for determining the band offset at CH3NH3PbI3/organic semiconductor heterojunctions (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-01-12
    Description: Organo-metal halide perovskites have recently emerged as a highly promising class of semiconductors for optoelectronic device applications. Integrating these hybrid materials within organic molecular thin film devices is key to fabricate functional devices. By evaporating ultra-thin films of organic semiconductor on thermally evaporated CH 3 NH 3 PbI 3 and using in-situ ultraviolet photoemission spectroscopy, we directly measure the interfacial energy offset between CH 3 NH 3 PbI 3 valence band maximum and the highest occupied molecular orbital for 5 different archetypal organic semiconductors. It is found that the energy offsets scale linearly as a function of the ionization energies of the organic semiconductors. The experimental data are in excellent agreement with a theoretical model for ideal semiconductor heterojunctions.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Design of blade-shaped-electrode linear ion traps with reduced anharmonic contributions (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-09-20
    Description: RF quadrupole linear Paul traps are versatile tools in quantum physics experiments. Linear Paul traps with blade-shaped electrodes have the advantages of larger solid angles for fluorescence collection. But with these kinds of traps, the existence of higher-order anharmonic terms of the trap potentials can cause large heating rate for the trapped ions. In this paper, we theoretically investigate the dependence of higher-order terms of trap potentials on the geometry of blade-shaped traps, and offer an optimized design. A modified blade electrodes trap is proposed to further reduce higher-order anharmonic terms while still retaining large fluorescence collection angle.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    Experimental demonstration of the universal energy level alignment rule at oxide/organic semiconductor interfaces (2014)
    American Physical Society (APS)
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    Publication Date: 2014-01-11
    Description: Author(s): L. Chai, R. T. White, M. T. Greiner, and Z. H. Lu In this work, our experimental demonstration of the universal energy level alignment rule at oxide/organic semiconductor interfaces is reported. Photoemission spectroscopy is used to show the three different regimes of the energy level alignment: the lowest unoccupied molecular orbital (LUMO) is pin... [Phys. Rev. B 89, 035202] Published Fri Jan 10, 2014
    Keywords: Semiconductors I: bulk
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
    Published by American Physical Society (APS)
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  • 4
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    A modified model of helical resonator with predictable loaded resonant frequency and Q-factor (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-10-16
    Description: High voltage radio frequency (RF) supply is a critical part in an ion trapping system. The RF supply should have high Q-factor and relatively high driving frequency. A frequently used RF supply for an ion trap system is a helical resonator. In certain applications, it is advantageous to have a predictable resonant frequency and Q-factor when the helical resonator is connected to a capacitive load. We develop a model to describe the behavior of a helical resonator with capacitive load. With this model, we can correctly predict the loaded resonant frequency and the loaded Q-factor. To test our prediction, we construct a helical resonator, and measure its resonant frequencies and Q-factors under different capacitive loads. The experimental results agree with our prediction.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 5
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    Design verification of large time constant thermal shields for optical reference cavities (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-02-13
    Description: In order to achieve high frequency stability in ultra-stable lasers, the Fabry-Pérot reference cavities shall be put inside vacuum chambers with large thermal time constants to reduce the sensitivity to external temperature fluctuations. Currently, the determination of thermal time constants of vacuum chambers is based either on theoretical calculation or time-consuming experiments. The first method can only apply to simple system, while the second method will take a lot of time to try out different designs. To overcome these limitations, we present thermal time constant simulation using finite element analysis (FEA) based on complete vacuum chamber models and verify the results with measured time constants. We measure the thermal time constants using ultrastable laser systems and a frequency comb. The thermal expansion coefficients of optical reference cavities are precisely measured to reduce the measurement error of time constants. The simulation results and the experimental results agree very well. With this knowledge, we simulate several simplified design models using FEA to obtain larger vacuum thermal time constants at room temperature, taking into account vacuum pressure, shielding layers, and support structure. We adopt the Taguchi method for shielding layer optimization and demonstrate that layer material and layer number dominate the contributions to the thermal time constant, compared with layer thickness and layer spacing.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Precision measurement of the light shift of $^{25}\mathrm{Mg}^{+}$ ions (2018)
    American Physical Society (APS)
    Details
    Publication Date: 2018-11-16
    Description: Author(s): W. H. Yuan, K. Deng, Z. Y. Ma, H. Che, Z. T. Xu, H. L. Liu, J. Zhang, and Z. H. Lu We calculate the polarizabilities of the Zeeman sublevels of Mg + 25 ion hyperfine ground states. To verify the calculation result, a single Mg + 25 ion is trapped in a Paul trap and a microwave resonance measurement is carried out on the ground states with and without the light shift. A good agreement ... [Phys. Rev. A 98, 052507] Published Thu Nov 15, 2018
    Keywords: Atomic and molecular structure and dynamics ; high-precision measurements
    Print ISSN: 1050-2947
    Electronic ISSN: 1094-1622
    Topics: Physics
    Published by American Physical Society (APS)
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  • 7
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    Chlorinated indium tin oxide electrodes with high work function for organic device compatibility (2011)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2011-04-16
    Description: In organic light-emitting diodes (OLEDs), a stack of multiple organic layers facilitates charge flow from the low work function [~4.7 electron volts (eV)] of the transparent electrode (tin-doped indium oxide, ITO) to the deep energy levels (~6 eV) of the active light-emitting organic materials. We demonstrate a chlorinated ITO transparent electrode with a work function of 〉6.1 eV that provides a direct match to the energy levels of the active light-emitting materials in state-of-the art OLEDs. A highly simplified green OLED with a maximum external quantum efficiency (EQE) of 54% and power efficiency of 230 lumens per watt using outcoupling enhancement was demonstrated, as were EQE of 50% and power efficiency of 110 lumens per watt at 10,000 candelas per square meter.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Helander, M G -- Wang, Z B -- Qiu, J -- Greiner, M T -- Puzzo, D P -- Liu, Z W -- Lu, Z H -- New York, N.Y. -- Science. 2011 May 20;332(6032):944-7. doi: 10.1126/science.1202992. Epub 2011 Apr 14.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, Canada M5S 3E4. michael.helander@utoronto.ca〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/21493822" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 8
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    Efficient Raman sideband cooling of trapped ions to their motional ground state (2017)
    American Physical Society (APS)
    Details
    Publication Date: 2017-07-18
    Description: Author(s): H. Che, K. Deng, Z. T. Xu, W. H. Yuan, J. Zhang, and Z. H. Lu Efficient cooling of trapped ions is a prerequisite for various applications of the ions in precision spectroscopy, quantum information, and coherence control. Raman sideband cooling is an effective method to cool the ions to their motional ground state. We investigate both numerically and experimen... [Phys. Rev. A 96, 013417] Published Mon Jul 17, 2017
    Keywords: Atomic and molecular processes in external fields, including interactions with strong fields and short pulses
    Print ISSN: 1050-2947
    Electronic ISSN: 1094-1622
    Topics: Physics
    Published by American Physical Society (APS)
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  • 9
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    Precision measurement of the $^{25}\mathrm{Mg}^{+}$ ground-state hyperfine constant (2017)
    American Physical Society (APS)
    Details
    Publication Date: 2017-11-22
    Description: Author(s): Z. T. Xu, K. Deng, H. Che, W. H. Yuan, J. Zhang, and Z. H. Lu We report an experimental determination of the ground-state hyperfine constant A of the Mg + 25 ions by measuring the | S 1 / 2 , F = 2 , m = 0 〉 to | S 1 / 2 , F = 3 , m = 0 〉 transition (0-0 transition) frequency of the two ground-state hyperfine energy levels. The frequency is measured by rf resonant method in a Paul trap u... [Phys. Rev. A 96, 052507] Published Tue Nov 21, 2017
    Keywords: Atomic and molecular structure and dynamics
    Print ISSN: 1050-2947
    Electronic ISSN: 1094-1622
    Topics: Physics
    Published by American Physical Society (APS)
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  • 10
    Electronic Resource
    Electronic Resource
    Properties of the deep donor states of AlxGa1−xAs:Se (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1057-1071 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the electrical and optical properties of the Se deep donor states in AlxGa1−xAs:Se grown by metalorganic vapor phase epitaxy (MOVPE) process is reported. A novel experimental technique is presented to determine the absolute energy and the true density of the deep donor. The characteristics of the Se deep donor states are obtained from deep level transient spectroscopy, photoluminescence, photocapacitance, Hall effect measurements, isothermal capacitance transient measurements, and a quasistatic capacitance voltage technique. It is found that the Se dopant gives rise to at least two energy levels in the band gap. One is the generally observed deep donor level, commonly called the DX level and the other is a new shallower donor state which also exhibits DX-like properties. The concentration of the shallower state is less than 5% of the deep donor density. The densities of both donors increase with the mole fraction of H2Se used during MOVPE growth. Thermal emission activation energies of 0.29±0.01 and 0.24±0.01 eV were found for the deep and shallower donor states, respectively, for 0.23≤x≤0.41. The Se donor ionization energies relative to the Γ minimum are determined for samples with different AlAs mole fractions, and also, the true densities of Se donors are obtained. We propose a macroscopic model for the emission and capture mechanisms of Se donors in AlxGa1−xAs, which allows a consistent interpretation of the results obtained by different measurement techniques and provides a natural explanation for the low temperature Hall density saturation phenomenon and the persistent photoconductivity effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354953
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    Paper (German National Licenses)
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