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  • 1
    Electronic Resource
    Electronic Resource
    The effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal-organic chemical-vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6726-6733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al0.48In0.52As layers grown on n+-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical-vapor deposition (MOCVD), as a function of substrate temperature, have been characterized by current-voltage-temperature, capacitance-voltage, deep-level transient spectroscopy, and admittance spectroscopy measurements. It was found that for diodes formed on MOCVD-AlInAs the current in forward bias is dominated by thermionic emission and the reverse current by recombination through the residual midgap states; whereas, for MBE-AlInAs diodes, the respective currents are dominated by defect-assisted tunneling at low forward and reverse biases. Schottky barrier heights were found to decrease with decreasing growth temperature. Three defect levels E1, E2, and E3 were observed in both material systems, and their densities were found to increase rapidly from ∼1012 to ∼1016 cm−3 as the growth temperature decreased from 740 to 500 °C. The decrease of barrier height and the appearance of the defect-assisted tunneling current at low bias were found to correlate with the increase of defect density. The high density of defects may be responsible for the low barrier heights and higher leakage currents previously observed in AlInAs/InGaAs/InP high electron mobility transistors though MOCVD growth provided high quality AlInAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355069
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  • 2
    Electronic Resource
    Electronic Resource
    Fine speckle contrast in InGaAs/InP systems: Influence of layer thickness, mismatch, and growth temperature (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4319-4323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work is focused on the study of the fine speckle contrast present in planar view observations of matched and mismatched InGaAs layers grown by molecular beam epitaxy on InP substrates. Our results provide experimental evidence of the evolution of this fine structure with the mismatch, layer thickness, and growth temperature. The correlation of the influence of all these parameters on the appearance of the contrast modulation points to the development of the fine structure during the growth. Moreover, as growth proceeds, this structure shows a dynamic behavior which depends on the intrinsic layer substrate stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352815
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  • 3
    Electronic Resource
    Electronic Resource
    Far-infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si(100) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 631-637 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers with thicknesses from 1 to 8 μm were grown by molecular-beam epitaxy onto Si(100) substrates. These epitaxial layers were lightly doped with Si (ND(approximately-equal-to)2×1016 cm−3). The determination of accurate numbers for the carrier concentrations and mobilities in the GaAs is complicated by the low doping and the dimensions of the films. However, a new approach in IR spectroscopy that combines a conventional reflectance measurement from 50 to 500 cm−1 with a transmittance measurement in the very far-infrared range from 12 to 62 cm−1 is demonstrated to provide precise information on both carrier concentrations and mobilities. A comparison of the results obtained at room temperature from IR and Hall measurements reveals that the nondestructive IR technique is an easy to perform and excellent characterization tool for the Ga As layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351845
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  • 4
    Electronic Resource
    Electronic Resource
    Alloy inhomogeneities in InAlAs strained layers grown by molecular-beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2470-2471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular-beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351083
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of pseudomorphic insulating HoF3 layers on Si(111) (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1858-1860 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of pseudomorphic, trigonal structured HoF3 insulating layers, stable at room temperature, on the Si(111) surface. Normally the tysonite structure is only stable at temperatures above 1070 °C [R. E. Thoma and G. D. Brunton, Sov. Phys. Crystallogr. 18, 473 (1966)]. A phase transition to the lower-temperature orthorhombic structure is observed for a thickness of around 12 A(ring), consistent with the relaxation of elastic strain in the insulating layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349506
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  • 6
    Electronic Resource
    Electronic Resource
    The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4908-4915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of investigations are presented which address various aspects of the growth, by molecular beam epitaxy, of n-type (Si doped) on-axis GaAs/GaAs(111)B. In situ characterization by reflection high-energy electron diffraction has identified four surface phases on the static (zero growth rate) surface, and three reconstructions which occur, depending upon the substrate temperature, during growth. The n-type doping properties of GaAs/GaAs(111)B epilayers have been compared with n-GaAs/GaAs(100) structures. Hall effect and low-temperature photoluminescence measurements have demonstrated that it is possible to dope GaAs/GaAs(111)B with Si in the 6×1014 to 1018 cm−3 range. A variable growth temperature study is also presented which examines the surface structural, electrical, optical, and surface morphological properties of n-GaAs/GaAs(111)B grown in the 400 to 650 °C temperature range. The onset of electrical conduction, and optically active material, was found to be directly related to changes in the dynamic surface structure. The variable growth temperature study also revealed a temperature regime within which it was possible to significantly improve the surface morphology of on-axis GaAs/GaAs(111)B structures whilst retaining good electrical and optical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350638
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  • 7
    Electronic Resource
    Electronic Resource
    The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5636-5641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope (STM) has been used to study the structural formation of silicon overlayers deposited at room temperature on GaAs(110). In addition spectroscopic measurements were obtained simultaneously to reveal electrical properties associated with the interface and overlayer formation. The Si coverage varied in thickness from submonolayer growth up to ∼16 monolayers. The height variations of the STM images indicate that silicon islands did not exceed ∼3 Å at either submonolayer growth or thicker coverages. The lack of atomic resolution of the adsorbed silicon suggests that the silicon overlayers are amorphous in nature, confirming soft x-ray photoelectron spectroscopy (SXPS) measurements. The scanning tunneling spectroscopy measurements clearly indicate a Fermi shift of 0.8 eV when silicon was deposited on the clean cleaved surface of p+ GaAs(110). This shift is also observed on regions of the substrate which remained exposed after the silicon deposition. The Fermi shifts and resultant band bending are attributed to the formation of the Si–GaAs heterojunction and correlation with earlier SXPS measurements prove favorable. The possibilities of measuring the band offsets are also considered. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371573
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  • 8
    Electronic Resource
    Electronic Resource
    INACTIVATION OF INSULIN BY RAT LIVER EXTRACTS1 (1954)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 76 (1954), S. 3357-3358 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01641a092
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  • 9
    Electronic Resource
    Electronic Resource
    Strain, alloy composition, and lattice relaxation measured by optical-absorption spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3393-3398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The validity of optical absorption (OA) as a technique for the measurement of strain e11, alloy composition x, and relaxation in InxGa1−xAs epilayers on InP has been examined by comparison with similar measurements by double-crystal x-ray diffraction (DCXD). Provided that the strain arising from differences in the thermal contraction of the substrate and epilayer are taken into account, measurements of strain by OA show good agreement with DCXD results, with a dispersion of Δe11=±0.27×10−3. Comparison of alloy compositions given by the two techniques shows similarly good agreement, with a dispersion in the values of x of less than Δx=±0.7%. OA may also be used to determine lattice relaxation. The degree of uncertainty in the measurement of this parameter increases as lattice match is approached and decreases as the lattice relaxes. Our studies indicate that OA may be used as an independent technique to evaluate strain, alloy composition, and the degree of lattice relaxation in InxGa1−xAs epilayers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358629
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  • 10
    Electronic Resource
    Electronic Resource
    In situ reflectance anisotropy studies of AlxGa1−xAs layers grown on GaAs(001) by molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3115-3120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflectance anisotropy spectroscopy was used to examine the surfaces of AlxGa1−xAs layers grown on GaAs(001) by molecular beam epitaxy, where the Al mole fraction was varied across the whole composition range x=(0.0,0.25,0.50,0.75,1.0). All surfaces were also independently characterized using reflection high-energy electron diffraction, and were found to exhibit a c(4×4) reconstruction. After initial changes in the spectra were observed on depositing very thin layers (≤20 monolayers), in the intermediate thickness range a regime was entered in which strong optical interference effects appeared. These effects are accurately accounted for using a four-media model. For thicker layers (≥8000 monolayers), interference effects were seen to diminish and spectra representative of the surfaces of bulk AlxGa1−xAs were obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358663
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