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  • 1
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    Coseismic and post-seismic slip of the 2009 L'Aquila (central Italy) MW 6.3 earthquake and implications for seismic potential along the Campotosto fault from joint inversion of high-precision levelling, InSAR and GPS data (2014)
    Elsevier Science Limited
    Details
    Publication Date: 2021-06-07
    Description: After the April 6th 2009 MW 6.3 (ML 5.9) L'Aquila earthquake (central Italy), we re-measured more than 100 km of high-precision levelling lines in the epicentral area. The joint inversion of the levelling measurements with InSAR and GPS measurements, allowed us to derive new coseismic and post-seismic slip distributions and to de- scribe, with high resolution details on surface displacements, the activation and the slip distribution of a second- ary fault during the aftershock sequence that struck the Campotosto area (major event MW 5.2). Coseismic slip on the Paganica fault occurred on one main asperity, while the afterslip distribution shows a more complex pattern, occurring on three main patches, including both slips on the shallow portions and on the deeper parts of the rup- ture plane. The comparison between coseismic and post-seismic slip distributions strongly suggests that afterslip was triggered at the edges of the coseismic asperity. The activation of a segment of the Campotosto fault during the aftershock sequence, with a good correlation between the estimated slipping area, moment release and distribution of aftershocks, raises the opportunity to discuss the local seismic hazard following the occurrence of the 2009 L'Aquila mainshock. The Campotosto fault appears capable of generating earthquakes as large as his- torical events in the region (M N 6.5) or as small as the ones associated with the 2009 sequence. In the case that the Campotosto fault is accumulating a significant portion of the current interseismic deformation, the 2009 MW N 5 events will have released only a small amount of the accumulated elastic strain, and then a significant hazard still remains in the area. Continuing geodetic monitoring and a densification of the GPS networks in the region are therefore needed to estimate the tectonic loading across the different recognized active fault systems in this part of the Apennines.
    Description: Published
    Description: 168-185
    Description: 2T. Tettonica attiva
    Description: JCR Journal
    Description: restricted
    Keywords: High-precision leveling; InSAR; GPS; Earthquake source; Normal faulting; Seismic hazard ; 04. Solid Earth::04.03. Geodesy::04.03.01. Crustal deformations ; 04. Solid Earth::04.03. Geodesy::04.03.07. Satellite geodesy ; 04. Solid Earth::04.06. Seismology::04.06.01. Earthquake faults: properties and evolution ; 04. Solid Earth::04.06. Seismology::04.06.11. Seismic risk ; 04. Solid Earth::04.07. Tectonophysics::04.07.01. Continents
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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  • 2
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    The 2009 L’Aquila earthquake (central Italy): A source mechanism and implications for seismic hazard (2010)
    AGU Journal
    Details
    Publication Date: 2017-04-04
    Description: An edited version of this paper was published by AGU. Copyright (2009) American Geophysical Union.
    Description: We use InSAR and body-wave seismology to determine independent source parameters for the 6th April 2009 Mw 6.3 L’Aquila earthquake and confirm that the earthquake ruptured a SW-dipping normal fault with 0.6–0.8 m slip. The causative Paganica fault had been neglected relative to other nearby range-frontal faults, partly because it has a subdued geomorphological expression in comparison with these faults. The L’Aquila earthquake occurred in an area with a marked seismic deficit relative to geodetically determined strain accumulation. We use our source model to calculate stress changes on nearby faults produced by the L’Aquila earthquake and we find that several of these faults have been brought closer to failure.
    Description: Published
    Description: L17312
    Description: 3.2. Tettonica attiva
    Description: JCR Journal
    Description: reserved
    Keywords: L'Aquila earthquake ; InSAR ; 04. Solid Earth::04.06. Seismology::04.06.01. Earthquake faults: properties and evolution
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
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  • 3
    Electronic Resource
    Electronic Resource
    Annealing of irradiated epitaxial InP solar cells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4315-4321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of electron, proton, and alpha particle irradiated, epitaxial n+p InP solar cells has been characterized using several techniques. Current–voltage measurements were made under simulated 1 sun, AM0 solar illumination and in the dark. The radiation-induced defect spectra were monitored using deep level transient spectroscopy and the base carrier concentration profiles were determined through capacitance–voltage measurements. The irradiated cells were annealed at temperatures ranging from 300 up to 500 K. Some cells were annealed while under illumination at short circuit while others were annealed in the dark. These experiments produced essentially the same results independent of illumination and independent of the irradiating particle. An annealing stage was observed between 400 and 500 K, in which the radiation-induced defects labeled H3 and H4 were removed and the carrier concentration recovered slightly. Concurrently there was a small reduction in the junction recombination current and a slight increase in the photovoltaic (PV) output of the cell; however, most of the radiation-induced defects did not anneal, and the overall PV recovery was very small. A full analysis of the annealing data is given, and a model for the radiation response and annealing behavior of the cells is presented. The results are compared to those reported previously for irradiated, diffused junction InP solar cells. Although the radiation-induced degradation mechanisms appear to be essentially the same in the two cell types, the recovery of the PV output is found to be quite different. This difference in cell recovery is explained in terms of the defect annealing characteristics in the individual cell types. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363380
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  • 4
    Electronic Resource
    Electronic Resource
    Degradation and annealing of electron-irradiated diffused junction InP solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7368-7375 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation and annealing properties of 1 MeV electron-irradiated n+p diffused junction InP solar cells are reported in detail. The solar cells were characterized through current–voltage measurements under simulated solar illumination at 1 sun, AM0. The radiation-induced defect spectra were characterized through deep level transient spectroscopy. At fluences up to 1015 cm−2, cell degradation was primarily due to a decrease in the short-circuit current Isc which occurred during the introduction of the hole trap, H4. Most of this degradation could be removed by minority-carrier injection annealing of the H4 defect at temperatures as low as 225 K. At higher irradiation fluences, up to 1016 cm−2, cell degradation was dominated by a decrease in both the open-circuit voltage Voc and the fill factor. This degradation was caused by a large radiation-induced recombination current and by carrier removal which was associated with the introduction of the hole trap H5 and the electron traps EA, EC, and ED. Most of the effects of the recombination current and some of the carrier removal were removed by concurrent injection and thermal annealing between 373 and 400 K where the residual H4 defect concentration and the H5 defect were removed. Essentially full cell recovery was achieved after subsequent annealing between 450 and 500 K where the electron traps also showed a partial annealing stage. Thermal annealing without illumination in the range of 350–500 K showed the same defect annealing stages suggesting that the cell recovery in this temperature range is due solely to thermal annealing. The data are summarized to give a model for the radiation-induced degradation and annealing of these InP solar cells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360386
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  • 5
    Electronic Resource
    Electronic Resource
    Electron irradiation of two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2173-2176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented for 1 MeV electron-irradiated, two terminal, monolithic InP/Ga0.47In0.53As tandem solar cells. These highly efficient prototype cells show radiation resistance that is comparable to single junction InP cells. A current mismatch between the subcells does not occur until high fluence levels, that is, near 3×1015 e−/cm2. This value for the onset of current mismatch and the measured remaining absolute efficiency of 9.4% at 1×1016 e−/cm2 are excellent results reported for a tandem cell designed for space applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358795
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  • 6
    Electronic Resource
    Electronic Resource
    Detailed defect study in proton irradiated InP/Si solar cells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3584-3589 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of the effects of proton irradiation-induced defects in heteroepitaxially grown InP/Si solar cells has been made through a combination of cathodoluminescence (CL), electron beam induced current (EBIC), and electrochemical capacitance versus voltage (ECV) carrier profiling measurements. The CL data indicate the distribution of nonradiative recombination centers both before and after proton irradiation, and temperature dependent and spectroscopic analysis of the CL signal give an estimate of the energies of the dominant defect levels. The EBIC data yield an estimate of the magnitude and spatial variation of the minority carrier diffusion length (L) in the base region. Values of L determined from EBIC measurements made on solar cells irradiated by protons ranging in energy from 0.1 up to 4.5 MeV follow a single curve when plotted versus displacement dose, Dd, allowing a single proton damage coefficient to be determined. The ECV measurements show the evolution of the carrier concentration profile in the cell under irradiation, as carrier removal first depletes and eventually type converts the base region. From an in-depth analysis of the combined data, the physical defects that give rise the radiation-induced energy levels are suggested, and a detailed understanding of the physical mechanisms causing the radiation response of InP/Si solar cells is developed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371262
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  • 7
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy study of proton irradiated p-type InP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6488-6494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A deep level transient spectroscopy study of proton irradiation induced defects in n+p InP mesa diodes grown by metalorganic chemical vapor deposition is reported. In contrast to results reported for InP grown by other methods, 3 MeV proton irradiation produced a DLTS spectrum similar to 1 MeV electron irradiation with the addition of two new peaks. Six majority carrier peaks: HP1(Ea=0.15 eV), H2(Ea=0.20 eV), H3(Ea=0.30 eV), H4(Ea=0.37 eV), H5(Ea=0.54 eV), and H7(Ea=0.61 eV) and three minority carrier peaks: EA(Ea=0.26 eV), EB(Ea=0.74 eV), and EC(Ea=0.16 eV) were detected. The H5 peak displayed a thermally activated capture cross section and a dependence of peak height on injection level. Isothermal annealing at 375 K was performed and thermal annealing rates are presented. Low temperature (200 K), minority carrier injection annealing rates are also presented. For most of the defects, a significant residual concentration remained after injection which could not be annealed further. An equation was developed for the annealing rate of the major defect, H4, as a function of injection level, carrier concentration, and temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348856
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  • 8
    Electronic Resource
    Electronic Resource
    Time dependence of radiation-induced generation currents in irradiated InGaAs photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1629-1635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of the reverse bias current-voltage curves of 1 MeV electron irradiated In0.53Ga0.47As photodiodes has been measured at 300 K. The observed decay is shown to be correlated with the reduction of the E2 peak height with time, as measured by deep level transient spectroscopy. The reverse current is found to decay with a logarithmic time dependence, which can be explained by a model in which the annealing of the E2 defects is controlled by a distribution of thermal energy barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354812
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  • 9
    Electronic Resource
    Electronic Resource
    Radiation-induced reverse dark currents in In0.53Ga0.47As photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7244-7249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse dark current-voltage (dark I-V) curves of InGaAs photodiodes have been measured as a function of temperature following irradiation with 1-MeV electrons. Prior to irradiation, the I-V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generation current which can be modelled as resulting from a single defect center with an energy Ec−0.29 eV. Such a defect center called E2 has been detected using deep level transient spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354012
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  • 10
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy of irradiated p-type InP grown by metalorganic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1435-1439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented of a deep level transient spectroscopy study of radiation-induced defects in p-type (Zn-doped) InP grown by metalorganic chemical vapor deposition. Three major hole traps (H3, H4, and H5) and two electron traps (EA and EB) were observed. The electron trap structure in particular is significantly different from that reported in the literature for p-type InP grown by other methods. Activation energies of 0.22 eV (EA) and 0.76 eV (EB) have been measured, and capture cross sections (σ∞) of 4.4×10−15 cm2 (EA), and 1.4×10−12 cm−2 (EB) have been determined. The H5 center has a thermally activated capture cross section with an energy barrier of 0.35 eV. The measured injection annealing rate of the primary hole trap (H4) was different than previously observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347284
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