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  • 1
    Monograph available for loan
    Monograph available for loan
    Thermoluminescence of Solids (1988)
    Cambridge ; New York : Cambridge University Press
    Details Availability
    Call number: AWI G6-98-0145
    Type of Medium: Monograph available for loan
    Pages: XIV, 376 S. : Abb. ; 23 cm
    ISBN: 0521368111
    Series Statement: Cambridge Solid State Science Series
    Branch Library: AWI Library
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  • 2
    Electronic Resource
    Electronic Resource
    Linearly modulated photoconductivity and linearly modulated optically stimulated luminescence measurements on Al2O3:C (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6073-6083 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measurement technique is introduced which involves linearly modulating the power of the stimulation light while measuring the photoconductivity in Al2O3:C. This produces peaks in the measured photoconductivity instead of the typical exponential decay seen when using a constant power stimulation light. The technique, called linearly modulated photoconductivity (LM-PC), is the conductivity equivalent of linearly modulated optically stimulated luminescence (LM-OSL). Two peaks are seen in the LM-PC measurements that correspond to the same charge residing in the 450 and 600 K thermally stimulated conductivity peaks, respectively. Simultaneous measurements on both the LM-PC and LM-OSL reveal that the second peak in the LM-PC is not present in the LM-OSL. Deconvolutions are performed on the LM-OSL to determine the underlying components that make up the detected OSL emissions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415761
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  • 3
    Electronic Resource
    Electronic Resource
    Trap level spectroscopy of undoped and Ga-doped Bi12GeO20 using thermally stimulated conductivity (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6521-6533 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of thermally stimulated conductivity (TSC) measurements performed on "pure'' Bi12GeO20 (BGO) and BGO doped with gallium is presented. The TSC data show many overlapping TSC peaks in the temperature range of interest (80–300 K) which arise from a complex array of trapping states. The TSC signals from both pure BGO and Ga-doped BGO are similar, consisting of a series of large peaks below 160 K and many smaller overlapping peaks between 180 and 300 K. The analysis shows that the large peaks below 160 K in undoped BGO arise from two trapping centers, each characterized by a distribution of activation energies centered at ∼0.24 and ∼0.29 eV, with distribution widths of ∼0.065 eV. In the Ga-doped BGO sample the large peak seen below 180 K arises from a single trapping center at ∼0.29 eV with a distribution width of ∼0.085 eV. Activation energies, frequency factors, and concentrations of trapping states have been determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359061
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  • 4
    Electronic Resource
    Electronic Resource
    Trapping of photocarriers in Ga-doped Bi12GeO20 at 80 K (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6511-6520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data from measurements of optical absorption, photoconductivity, dark conductivity, thermally stimulated conductivity (TSC), and thermoluminescence (TL) on samples of undoped and Ga-doped, Czochralski-grown Bi12GeO20 single crystals are reported. The photoconductivity is n type, and the dark conductivity is p type. Undoped BGO exhibits a broad, band-edge absorption due to the optical excitation of electrons to the conduction band which gives the samples a yellow coloration. This absorption is reduced by the addition of Ga which acts as a compensating acceptor. When illuminated with light into this absorption band, but with photons of energy less than the band gap, photoexcitation of electrons occurs. These become trapped, inducing additional absorption and photoconductivity bands and TSC signals, but not TL. Excitation with photons of energy greater than the band gap induces both TSC and TL. Examination of the TSC and TL signals as a function of excitation wavelength allows the distinction between electron and hole trapping states for which trapping parameters have been determined. In addition, dark conductivity reveals three major hole states at energies of ∼Ev+1.41, ∼Ev+0.86, and ∼Ev+0.54 eV. These are believed to be empty donor states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359060
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  • 5
    Electronic Resource
    Electronic Resource
    Trapping parameters in CdTe single crystals determined by thermally stimulated conductivity (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2196-2205 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally stimulated conductivity (TSC) data on high-resistivity, p-type CdTe single crystals are presented. The CdTe samples under study were either nominally undoped or doped with Mn or Fe. Deconvolution and peak fitting analysis of the TSC curves consistently revealed the presence of traps at approximately Ev+0.16, Ec−0.24, Ev+0.23, Ev+0.32, Ev+0.39, Ev+0.40, and Ev+0.47 eV in etched samples corresponding to TSC maxima at approximately 95, 110, 120, 145, 165, 170, and 190 K, respectively. An additional TSC peak, believed to be related to surface damage caused by mechanical polishing, is observed at approximately 105 K corresponding to electron traps at Ec−0.21 eV. The evidence indicates that the TSC curve from 80 to 200 K may be best described as a superposition of first-order (slow-retrapping) processes. Frequency factors and capture cross sections are calculated as temperature-dependent power-law functions. Some of the traps have been associated with particular defect structures, however, no clear correlation with the presence of Mn or Fe is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346522
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  • 6
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy of irradiated p-type InP grown by metalorganic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1435-1439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented of a deep level transient spectroscopy study of radiation-induced defects in p-type (Zn-doped) InP grown by metalorganic chemical vapor deposition. Three major hole traps (H3, H4, and H5) and two electron traps (EA and EB) were observed. The electron trap structure in particular is significantly different from that reported in the literature for p-type InP grown by other methods. Activation energies of 0.22 eV (EA) and 0.76 eV (EB) have been measured, and capture cross sections (σ∞) of 4.4×10−15 cm2 (EA), and 1.4×10−12 cm−2 (EB) have been determined. The H5 center has a thermally activated capture cross section with an energy barrier of 0.35 eV. The measured injection annealing rate of the primary hole trap (H4) was different than previously observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347284
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  • 7
    Electronic Resource
    Electronic Resource
    5.5 eV optical absorption, supralinearity, and sensitization of thermoluminescence in LiF TLD-100 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 724-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concept of competition-during-heating as a mechanism for TL supralinearity and sensitization in TLD-100 is re-examined. It is demonstrated that with this model it is not necessary that the competing traps be removed by radiation in order for supralinearity to be obtained. Furthermore, the arguments for and against the proposal that the precursors to the 5.5 eV centers are the required competing centers are reviewed. It is shown that those experiments which are cited as arguments against this proposal have other interpretations different from those published so far. These new interpretations are consistent with the original view that the 5.5 eV centers' precursors are indeed competitors to the main TL process. MgOH centers are also likely competitors in samples with substantial OH contents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346805
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  • 8
    Electronic Resource
    Electronic Resource
    1.4-eV photoluminescence and thermally stimulated conductivity in cadmium telluride (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 975-982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and thermally stimulated conductivity (TSC) data on high-resistivity, p-type CdTe single crystals are presented. The PL emission in these samples consists of two closely overlapping components peaking at approximately 1.47 and 1.49 eV. Thermal quenching of these signals reveals activation energies of ∼0.02 and ∼0.13 eV for the former component, and ∼0.11 eV for the latter. TSC signals at temperatures corresponding to those over which thermal quenching occurs are observed. The TSC peaks are due to hole release with activation energies which agree with those obtained from the thermal quenching studies. Etching of the samples removes surface damage caused by mechanical polishing. The surface damage produces nonradiative pathways by which electron-hole recombination can take place without luminescence. A model based on free-electron to trapped-hole recombination is presented to account for the data. It is shown, from numerical solutions of the rate equations describing the model, that by explicitly incorporating into the model more than one hole state at which radiative recombination can occur, shifts in the emission energy during time-resolved and intensity-dependence studies can be expected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345707
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  • 9
    Electronic Resource
    Electronic Resource
    Growth and characterization of substrate-quality ZnSe single crystals using seeded physical vapor transport (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2931-2936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystallographic and optical characterization techniques were carried out on ZnSe single-crystal samples grown by the seeded physical vapor transport (SPVT) and by high-pressure Bridgman techniques. A comparison of etch pit densities shows much lower values for the SPVT material. The distribution of etch pits across a wafer is uniform in SPVT samples but extremely nonuniform in the Bridgman samples. X-ray topography studies reveal that the SPVT material has few defects and no grain boundaries while the Bridgman material shows both low and high angle grain boundaries. Photoluminescence (PL) data at 12 K on the SPVT material reveal an absence of donor acceptor pair (DAP) emissions. The spectrum is dominated by the Id1 Cu-related line and its phonon replicas and only weak Cug and Cur emissions are observed. No thermoluminescence (TL) is seen from the SPVT samples but they do give thermally stimulated conductivity (TSC) signals due to the release of holes from CuZn centers with activation energies of 0.33 eV and 0.71 eV. Only hole states are seen in the SPVT material. In contrast the Bridgman samples show intense DAP PL lines, as well as Id1 lines. They show Cug and Cur emission, give strong TL and TSC signals, and reveal an array of both electron and hole states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351026
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  • 10
    Electronic Resource
    Electronic Resource
    Photoionization of deep centers in Al2O3 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 249-256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical threshold energies for photoionization of several different electron traps in Al2O3 have been determined using photoconductivity and optically stimulated luminescence (OSL). Stimulation of the photoconductivity and OSL is observed over a wide range of optical energies. The localized trapping states giving rise to the signals are found to be distributed in energy over a wide energy range, with major distributions between 1.7 and 2.5, 3.0 and 3.8, and 3.8 and 4.9 eV. From annealing measurements we show that the lowest energy distribution (1.7–2.5 eV) correlates with the thermoluminescence and thermally stimulated conductivity signals appearing in the temperature range of 400–500 K. The annealing measurements show that these traps contribute 〉90% of the OSL signal. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371853
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