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  • 1
    Publication Date: 2023-03-16
    Keywords: Archive of Ocean Data; ARCOD; Area/locality; Badain Jaran Desert; Bicarbonate ion; BJD-1; BJD-10; BJD-11; BJD-12; BJD-13; BJD-14; BJD-15; BJD-16; BJD-17; BJD-18; BJD-19; BJD-2; BJD-20; BJD-21; BJD-22; BJD-23; BJD-24; BJD-25; BJD-26; BJD-27; BJD-28; BJD-29; BJD-3; BJD-30; BJD-31; BJD-32; BJD-33; BJD-34; BJD-35; BJD-36; BJD-37; BJD-38; BJD-4; BJD-5; BJD-6; BJD-7; BJD-8; BJD-9; Calcium; Calculated; Carbonate; Chloride; Da Tong River; Elevation of event; Event label; Gu Ri Nai; Hei He River; Helium-3/Helium-4; Helium-4/Neon-20; Huang Shui River; Latitude of event; Longitude of event; Magnesium; Mass spectrometry; Nitrate; pH; Potassium; Ratio; Sample type; Shi Yang River; Shi You River; Shu Le River; Sodium; Sulfate; Tao LaiRiver; Total dissolved solids; Tritium; Tritium, standard deviation; Water sample; Wen Tu Gao Le; WS; δ18O, water; δ Deuterium
    Type: Dataset
    Format: text/tab-separated-values, 601 data points
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  • 2
    Publication Date: 2023-03-16
    Keywords: Archive of Ocean Data; ARCOD; Badain Jaran Desert; BJD-P1; BJD-P2; BJD-P3; Date; Depth, bottom/max; DEPTH, sediment/rock; Depth, top/min; Elevation of event; Event label; Latitude of event; Longitude of event; Mass spectrometry; SOIL; Soil profile; Water content, wet mass; δ18O, water; δ Deuterium
    Type: Dataset
    Format: text/tab-separated-values, 174 data points
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  • 3
    Publication Date: 2023-03-16
    Keywords: Archive of Ocean Data; ARCOD; Badain Jaran Desert; BJD-P1; BJD-P2; BJD-P3; Chloride; Date; Depth, bottom/max; DEPTH, sediment/rock; Depth, top/min; Elevation of event; Event label; Ion chromatograph, Dionex Corporation, DX-300; Latitude of event; Longitude of event; SOIL; Soil profile; Sulfate; Water content, wet mass
    Type: Dataset
    Format: text/tab-separated-values, 174 data points
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  • 4
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    Unknown
    PANGAEA
    In:  Supplement to: Chen, J S; Sun, X X; Gu, W Z; Tan, H B; Rao, W B; Dong, H Z; Liu, X Y; Su, Z G (2012): Isotopic and hydrochemical data to restrict the origin of the groundwater in the Badain Jaran Desert, Northern China. Geokhimiya, 2012, 50(5), 502-512, Geochemistry International, 50(5), 455-465, https://doi.org/10.1134/S0016702912030044
    Publication Date: 2023-03-16
    Description: Despite its extreme aridity the Badain Jaran Desert is rich in groundwater. In the southeastern part of this desert it is characterized by coexistence of high megadunes and a great number of lakes. Deuterium and oxygen 18 isotope compositions as well as hydrochemistry of groundwater, lake water, soil water and river water were investigated in detail to gain an insight into their relationships and the origin of the groundwater. The results show that the groundwater and the lake water are genetically related, but unrelated to local precipitation and the leakage of Heine River at the northern slope of the Qilian mountain. dD and d18O values of deep soil water (deeper than 40 cm) and groundwater plot on the same evaporation line E11, which shows that they have the same recharge source. The point of intersection between E11 and LMWL suggests that the groundwater originates from a water resource, which has a weighted mean value that is lighter by some 6 per mil d18O than local precipitation in Badain Jaran Desert. 3H data of water samples show that the groundwater in the Badain Jaran Desert originates from water recharged after the nuclear test. The deep fault zone underground maybe a water circulation channel based on helium analysis of groundwater. The result has guiding significance to rational exploitation and utilization of the local groundwater.
    Keywords: Archive of Ocean Data; ARCOD
    Type: Dataset
    Format: application/zip, 3 datasets
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4249-4252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conversion of the carbon-interstitial–phosphorous-substitutional (Ci-Ps) pairs from configuration M4 to M1 is shown to have a strong dependence on the method of sample fabrication. This conversion can be observed only in samples that have been contaminated by boron during sample fabrication. The temperature at which the conversion to M1 occurs is closely related to the level of boron contamination. In addition, it is shown that the M1 peak is not a single defect level. M1 consists of at least two overlapping levels that have similar properties but which are clearly related to different configurations. It is proposed that the conversion of M4 to M1 involves long-range migration of boron interstitials and that the M1 configurations involve a boron interstitial trapped at an isolated Ci-Ps pair.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4068-4070 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new single scan method for obtaining deep level trap parameters is presented. This method represents an improvement over previous single scan approaches because it does not involve numerical analysis and it uses data over the entire temperature range of the deep-level transient spectroscopy peak. Data are presented for an isolated deep level, the E center. The usefulness of this new method is also demonstrated by an example of successful analysis of overlapping deep level signals. The new single scan method maintains the simplicity of the traditional method of data collection. However, the single temperature scan saves time and more important, is often more accurate than the traditional multitemperature scan technique.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of ultrafast (〈1 ps) recovery of all-optical modulation based on below band gap, optically induced excess absorption using pump pulse energies of less than 4 pJ. At higher pump pulse energies, the hot carriers produced by two-photon absorption significantly reduce the recovery rate. The increase in absorption recovery times at the higher densities of hot carriers is consistent with a contribution to the nonlinear absorption change from hot electron assisted absorption. The measured hot electron assisted absorption cross section of 2×10−20 m2 is in good agreement with the theoretical value.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1362-1364 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that the electron capture transients of the individual DX levels in Si-doped AlGaAs include two regimes: net capture and redistribution. In this letter, by analyzing both of these regimes, the electron capture kinetics of DX centers are determined for the first time. It is found that the capture rate for an empty state is proportional to the square of the free carrier concentration. These kinetics are predicted only by the negative U model in which two electrons are captured sequentially via an intermediate one-electron state.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1746-1748 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multiple DX levels are studied by using the rate-window scan method of deep level transient spectroscopy. It is found that the electron concentrations in the individual DX levels do not always increase monotonically with filling time, showing a charge redistribution effect. This charge redistribution in the DX levels indicates that the DX center is negatively charged and that each defect site is able to generate multiple states in different levels. The charge redistribution effect unambiguously rules out all existing small lattice relaxation models, while it is understood within the broken-bond negative U model.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1984-1986 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The precipitation of arsenic in superlattice structures of alternately undoped and [Be]=2.4×1019 cm−3 doped GaAs grown at low temperatures has been studied using transmission electron microscopy. Novel precipitate microstructures were observed in annealed samples, including preferential accumulation of precipitates toward each interface of Be-doped GaAs and the following grown undoped GaAs. Specifically, after 800 °C annealing, the precipitates are totally confined in Be-doped regions, forming two-dimensional dot arrays near the aforementioned interfaces. Data are also presented to show that the heavily Be-doped GaAs has a smaller lattice constant than the undoped GaAs. A strain-induced mechanism was proposed to account for the segregation of As clusters. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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