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  • 1
    Electronic Resource
    Electronic Resource
    Thermal stability of W ohmic contacts to n-type GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 278-281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+-GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β–W2N and W–N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 A(ring)) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+-GaN for high temperature applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362816
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  • 2
    Electronic Resource
    Electronic Resource
    Ion implantation doping and isolation of GaN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1435-1437 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: N- and p-type regions have been produced in GaN using Si+ and Mg+/P+ implantation, respectively, and subsequent annealing at ∼1100 °C. Carrier activation percentages of 93% for Si and 62% for Mg were obtained for implant doses of 5×1014 cm−2 of each element. Conversely, highly resistive regions ((approximately-greater-than)5×109 Ω/(D'Alembertian)) can be produced in initially n- or p- type GaN by N+ implantation and subsequent annealing at ∼750 °C. The activation energy of the deep states controlling the resistivity of these implant-isolated materials is in the range 0.8–0.9 eV. These process modules are applicable to the fabrication of a variety of different GaN-based electronic and photonic devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114518
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  • 3
    Electronic Resource
    Electronic Resource
    Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3315-3317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of optical studies of InxGa1−xN alloys (0〈x〈0.2) grown by metalorganic chemical vapor deposition on top of thick GaN epitaxial layers with sapphire as substrates. Photoluminescence (PL) and photoreflectance measurements were performed at various temperatures to determine the band gap and its variation as a function of temperature for samples with different indium concentrations. Carrier recombination dynamics in the alloy samples were studied using time-resolved luminescence spectroscopy. While the measured decay time for the alloy near-band-edge PL emissions was observed to be generally around a few hundred picoseconds at 10 K, it was found that the decay time decreased rapidly as the sample temperatures increased. This indicates a strong influence of temperature on the processes of trapping and recombination of excited carriers at impurities and defects in the InGaN alloys. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117291
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  • 4
    Electronic Resource
    Electronic Resource
    Damage to epitaxial GaN layers by silicon implantation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion channeling and cross-sectional transmission electron microscopy were used to study the extent and nature of Si ion implantation damage in epitaxial GaN layers at liquid nitrogen temperature. Results indicate that displacement damage produced by the implantation undergoes substantial dynamic annealing during implantation. As a result, at moderate implantation doses residual implantation damage consists of a dense network of secondary defects, such as clusters and loops, which are a consequence of incomplete annihilation of implantation-produced defects. Amorphous layers can be produced, but the doses required are extremely high ((approximately-greater-than)1016 cm−2) and amorphization appears to "nucleate'' at the surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117526
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  • 5
    Electronic Resource
    Electronic Resource
    Study of nonlinear optical effects in GaN:Mg epitaxial film (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2953-2955 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The second-order nonlinear optical coefficients d33, d31, and d15 of GaN:Mg epitaxial film were studied by the standard Maker fringe of an anisotropic medium. The measured d33=−(16.5±1.3) pm/V which is 55 times of the d11 of quartz. The measured ratios of d33/d31 and d31/d15 showed that the crystalline film is close to an ideal wurzite structure. The refractive indices and the dispersive curves of ne, n0 were also determined by TM and TE waveguide mode measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117741
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  • 6
    Electronic Resource
    Electronic Resource
    Ca and O ion implantation doping of GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1945-1947 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p- and n-type doping of GaN have been realized by ion implantation of Ca and O, respectively. Rapid thermal annealing at 1100 °C or higher is required to achieve p-type conduction in Ca or Ca+P implanted samples with an estimated ionization level of 169 meV and a corresponding activation efficiency of ∼100%. This is the first experimental report of an acceptor species in GaN, other than Mg, with an ionization energy level less than 180 meV. O-implanted GaN displays an ionization level of ∼29 meV but with an activation efficiency of only 3.6% after a 1050 °C anneal that may result from insufficient vacancy generation for the lighter O ion or from the existence of a second, deeper O energy level. Neither Ca or O displayed measurable redistribution, based on secondary ion mass spectrometry measurements, even after a 1125 °C anneal. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115634
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  • 7
    Electronic Resource
    Electronic Resource
    Sputtered AlN encapsulant for high-temperature annealing of GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 538-540 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactively sputtered AlN is shown by electrical characterization of Pt/Au Schottky diodes to be an effect encapsulant for GaN annealed at 1100 °C. Schottky diodes formed on GaN encapsulated with AlN during the anneal had low reverse leakage currents with breakdown voltages in excess of 40 V. In contrast, samples annealed without the AlN layer had 3–4 orders-of-magnitude higher reverse leakage currents. Atomic force microscopy images of as-grown and annealed samples also demonstrate an increase in surface roughness and a change in morphology of the uncapped samples following annealing. Auger electron spectroscopy supports the hypothesis that the AlN encapsulant is reducing N loss from the GaN substrate. N loss in the uncapped samples is expected to create an n+-region at the surface that accounts for the high reverse leakage current and improved Ohmic behavior for the uncapped samples. The use of AlN encapsulation will enable the realization of all ion implanted GaN metal semiconductor field effect transistors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117779
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  • 8
    Electronic Resource
    Electronic Resource
    SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent metalorganic chemical vapor deposition of GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2264-2266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si (111) semiconductor-on-insulator (SOI) structures have been converted to SiC by carbonization of the thin (〈100 nm) Si layer using rapid thermal chemical vapor deposition with mixtures of propane and H2 at atmospheric pressure. Carbonization temperatures around 1225–1250 °C produced SiC films with optimum structural properties. X-ray diffraction (XRD) reveals a single SiC peak at 2θ=35.7° corresponding to the (111) reflection, with an uncorrected full width at half-maximum (FWHM) of ∼0.24°. Infrared spectroscopy of SiC SOI structures obtained under optimum carbonization conditions exhibited a sharp absorbtion peak produced by the Si–C bond at 795 cm−1, with FWHM=22–25 cm−1. Metalorganic chemical vapor deposition growth of GaN on the (111) SiC SOI was carried out with trimethylgallium and NH3 precursors at 1000 °C. XRD indicates highly oriented hexagonal GaN, with FWHM of the (0002) peak of ∼0.15°. The 300 °K photoluminescence (PL) spectrum of GaN films exhibits a strong near band-edge peak (at λp∼371 nm, with FWHM=100–150 meV) and weak yellow emission. Under low power excitation, the 370 nm PL emission from the GaN/SiC SOI structure displays an emission intensity ∼10× higher than that of equivalent GaN films grown on sapphire. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117528
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  • 9
    Electronic Resource
    Electronic Resource
    Ion-implanted GaN junction field effect transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2273-2275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). p-type and n-type doping was achieved with Ca and Si implantation, respectively, followed by a 1150 °C rapid thermal anneal. A refractory W gate contact was employed that allows the p-gate region to be self-aligned to the gate contact. A gate turn-on voltage of 1.84 V at 1 mA/mm of gate current was achieved. For a ∼1.7 μm×50 μm JFET with a −6 V threshold voltage, a maximum transconductance of 7 mS/mm at VGS=− 2V and saturation current of 33 mA/mm at VGS=0 V were measured. These results were limited by excess access resistance and can be expected to be improved with optimized n+ implants in the source and drain regions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115882
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  • 10
    Electronic Resource
    Electronic Resource
    Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1879-1881 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The apparent thermal stability of hydrogen passivated Mg acceptors in GaN is a function of the annealing ambient employed, with H2 leading to a reactivation temperature approximately 150 °C higher than N2. The dissociation of Mg–H complexes and the loss of hydrogen from GaN are sequential processes, with reactivation occurring at ≤700 °C for annealing under N2, while significant concentrations of hydrogen remain in the crystal even at 900 °C in implanted samples. The hydrogen is gettered to regions of highest defect density such as the InGaN layer in GaN/InGaN double heterostructure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117464
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