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  • 1
    Electronic Resource
    Electronic Resource
    Electrical and microstructural properties of highly boron-implantation doped 6H–SiC (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3162-3167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron was implanted with four energies and doses at 400 °C into 6H–SiC epilayers to form a 500 nm thick doped layer with a mean concentration between 1×1018 and 1.5×1021 cm−3. Two annealing techniques were used: furnace and flash lamp annealing. The electrical and microstructural effects were investigated using temperature dependent Hall measurements, cross sectional electron microscopy, and secondary ion mass spectrometry. During the annealing two competing processes occurred: boron outdiffusion and growth of boron containing precipitates. The efficiency of these individual processes is different for varying dopant concentrations as well as annealing techniques. After furnace annealing at temperatures between 1550 and 1750 °C and for a mean boron concentration of 5×1019 cm−3 boron containing clusters are found mainly around the region of the three deeper implantation peaks. In the surface region boron outdiffusion is observed adjusting a concentration of 1.5×1019 cm−3. Using flash lamp annealing, the outdiffusion is negligible. For high dopant concentrations (1.5×1021 cm−3) the growth of random distributed boron precipitates is the dominating effect independent of the used annealing techniques. The electrical activation is limited due to the solubility of boron in SiC. After furnace annealing Hall effect measurements show a maximum hole concentration of about 2×1016 cm−3 for the boron concentration of about 5×1018 cm−3. Alternative to the furnace annealing, the electrical properties after flash lamp annealing at about 2000 °C, 20 ms show a slight enhancement of the maximum hole concentration for boron concentrations 〈3×1020 cm−3. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333743
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  • 2
    Electronic Resource
    Electronic Resource
    Trans-projected-range gettering of copper in high-energy ion-implanted silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6934-6936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong gettering of Cu atoms beyond the projected ion range RP has been found in single-crystal Si implanted with P+ and As+ ions at MeV energies. We call this phenomenon the "trans-RP effect." The formation of a separate Cu gettering band below RP, as detected by secondary ion mass spectrometry, indicates the presence of a significant amount of defects therein. These defects have not been detected by transmission electron microscopy and we suggest that they are small interstitial clusters. The amount of Cu atoms gettered beyond RP is, particularly for the P implants, much greater than that in the gettering layer at RP, indicating that the gettering ability of the point defects beyond RP is higher than that of the extended defects at RP. A mechanism responsible for their formation and clustering in the trans-RP region is proposed, and an explanation is given of the differences in the results for the P and As implants. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311823
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  • 3
    Electronic Resource
    Electronic Resource
    High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The trans-projected-range effect (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5645-5652 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Five different species, namely B, Si, P, Ge, and As, were implanted at MeV energies into (100)-oriented n-type Czohralski Si, in order to form deep gettering layers during the subsequent annealing. Then the samples were contaminated with Cu by implanting the impurity on the backface and performing additional annealing. The resulting Cu depth distributions were measured by secondary ion mass spectrometry. Strong gettering of Cu atoms beyond the projected ion range RP and formation of a well-defined separate Cu gettering band therein is found for P and As implants. We call this phenomenon the "trans-RP effect." It arises from the presence of a significant amount of defects in the regions much deeper than RP. Their gettering ability is higher than that of the extended defects around RP, as the amount of Cu atoms gettered beyond RP is, especially for the P implants, much greater than that in the implanted gettering layer at RP. These deep defects have not been detected by transmission electron microscopy, and we suggest that they are small interstitial clusters. A mechanism responsible for the migration of self-interstitials from RP into the trans-RP region and their clustering therein is proposed. An explanation is given of the possible reasons for the differences in the results for the P+ and As+ implants. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316054
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  • 4
    Electronic Resource
    Electronic Resource
    In situ laser reflectometry study of the amorphization of silicon carbide by MeV ion implantation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3090-3097 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ laser reflectometry and ex situ Rutherford backscattering spectrometry have been used to investigate the ion fluence and temperature dependence of the amorphization process in silicon carbide induced by 3 MeV I2+ irradiation. A comparative study in silicon showed that damage accumulation in silicon carbide proceeds more gradually in the preliminary stage of amorphization. The amorphization fluence depends weakly on temperature below 300 K but strongly above 300 K. Silicon carbide is amorphized more quickly than silicon at elevated temperatures. At very low temperatures a higher ion fluence for the amorphization of silicon carbide is required in comparison to silicon. Owing to this behavior, different mechanisms of damage growth are assumed to be present in these semiconductors. A critical energy density of 5.6×1024 eV/cm3 for the amorphization of the silicon carbide crystal up to the surface has been found at room temperature. Experimental results are compared with predictions of the models proposed by Carter as well as by Morehead and Crowder. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368508
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  • 5
    Electronic Resource
    Electronic Resource
    Formation and characterization of Si/SiO2 multilayer structures by oxygen ion implantation into silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4960-4970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried double oxide structures in Si have been produced by the sequential high- and low-energy implantation of oxygen ions at 2 MeV and 90 keV, respectively. Each implantation step was followed by a high-temperature anneal at 1300 °C for 6 h. Fourier transform infrared reflection spectroscopy has been used in order to characterize the as-implanted and annealed samples. Rutherford backscattering spectroscopy/channeling analysis was also carried out for selected samples. The morphology of the two buried layers is the same as for the single energy implants. No interaction or transport of oxygen between the two layers is observed. The in-between buried Si layer as well as the Si overlayer are of high crystal quality and could be potentially used as waveguiding layers, in a Si-based optical waveguiding structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363540
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  • 6
    Electronic Resource
    Electronic Resource
    Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2978-2984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-dose carbon-ion-implanted Si samples have been analyzed by infrared spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy (XPS) correlated with transmission electron microscopy. Samples were implanted at room temperature and 500 °C with doses between 1017 and 1018 C+/cm2. Some of the samples were implanted at room temperature with the surface covered by a capping oxide layer. Implanting at room temperature leads to the formation of a surface carbon-rich amorphous layer, in addition to the buried implanted layer. The dependence of this layer on the capping oxide suggests this layer to be determined by carbon migration toward the surface, rather than surface contamination. Implanting at 500 °C, no carbon-rich surface layer is observed and the SiC buried layer is formed by crystalline β-SiC precipitates aligned with the Si matrix. The concentration of SiC in this region as measured by XPS is higher than for the room-temperature implantation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358714
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  • 7
    Electronic Resource
    Electronic Resource
    Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6907-6913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of SiC films obtained by carbon ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x-ray photoelectron spectroscopy (XPS). The data obtained show the formation of an amorphous Si1−xCx layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si–C bonds in addition to the Si–Si and C–C ones in the implanted region, with a composition in the range 0.35〈x〈0.6. This points out the existence of a partial chemical order in the layer, in between the cases of perfect mixing and complete chemical order. Recrystallization of the layers has been achieved by ion-beam induced epitaxial crystallization (IBIEC), which gives rise to a nanocrystalline SiC layer. However, recrystallization is not complete, observing still the presence of Si–Si and C–C bonds in an amorphous phase. Moreover, the distribution of the different bonds in the IBIEC processed samples is similar to that from the as-implanted ones. This suggests that during IBIEC homopolar bonds are not broken, and only regions with dominant Si–C heteropolar bonds recrystallize. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361514
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  • 8
    Electronic Resource
    Electronic Resource
    Amorphization and recrystallization of 6H-SiC by ion-beam irradiation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2999-3009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphization of 6H-SiC with 200 keV Ge+ ions at room temperature and subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 300 keV Si+ ions at 480 °C have been studied by Rutherford backscattering spectrometry/channeling and transmission electron microscopy analysis. Experimental results on amorphous layer thicknesses have been compared with trim calculations in association with the critical energy density model. Density changes during amorphization have been observed by step height measurements. Particular attention has been directed to the crystal quality and a possible polytype transformation during the IBIEC regrowth. The IBIEC process consists of two stages and results in a multilayer structure. In the initial phase an epitaxial growth of 6H-SiC has been obtained. With increasing IBIEC dose the epitaxial growth changes to columnar growth and is stopped by polycrystallization of 3C polytype in the near-surface region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358649
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  • 9
    Electronic Resource
    Electronic Resource
    Enhancement of the intensity of the short-wavelength visible photoluminescence from silicon-implanted silicon-dioxide films caused by hydrostatic pressure during annealing (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1418-1420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of the hydrostatic pressure during annealing on the intensity of the visible photoluminescence (PL) from thermally grown SiO2 films irradiated with Si+ ions using double-energy implants at 100 and 200 keV and ion doses ranging from 1.2×1016 to 6.3×1016 cm−2. Postimplantation anneals have been carried out in an Ar ambient at temperatures Ta of 400 and 450 °C for 10 h at both atmospheric pressure and hydrostatic pressures of 0.1, 10, 12, and 15 kbar. It has been found that the intensity of the ultraviolet (∼360 nm), blue (∼460 nm), and red (∼600 nm) PL emission bands increases with raising hydrostatic pressure whereby the PL peaks retain their wavelength positions. The results obtained have been interpreted in terms of enhanced, pressure-mediated formation of ≡Si–Si≡ centers and small Si clusters within metastable regions of the ion-implanted SiO2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121962
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  • 10
    Electronic Resource
    Electronic Resource
    Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3215-3217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth distribution of Ge implanted into thermally grown SiO2 films has been studied after annealing using transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction. At annealing temperatures above 900 °C a significant redistribution of the as-implanted Ge profile was found. Crystalline Ge nanoclusters embedded in the SiO2 matrix are formed within a cluster band with well defined boundaries. The evolution of nanoclusters can be explained qualitatively by a model based on nucleation, growth and Ostwald ripening of Ge precipitates. Besides, chemical and interface reactions lead to the formation of additional Ge peaks near the surface and at the Si/SiO2 interface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120294
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