ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The reaction mechanism of titanium silicide was investigated for varying amounts, of BF2 dopant on a Si-substrate. Titanium thin films were prepared by direct current sputtering on non-doped and BF2-implanted silicon wafers. The heat treatment temperatures, by rapid thermal annealing (RTA), were varied in the range 600–800 °C for 20 s. C49 TiSi2 forms at 700 °C and almost all of its phase is transformed into C54 TiSi2 with a very low resistivity value (16 μΩ cm) at 800 °C. When the amount of impurities is increased, the sheet resistance of Ti-silicides also increased while its thickness decreased. The main cause of the thickness reduction of Ti-silicide is the growth of enhanced native oxide. Dopants are chiefly redistributed in the interface between the Ti-silicide and the Si-substrate. It is believed that the formation of titanium boride increases the contact resistance during the Ti-silicide formation for samples annealed at 750 °C and 800 °C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00361150
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