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  • 1
    Electronic Resource
    Electronic Resource
    Electroluminescence, photoluminescence, and photocurrent studies of Si/SiGe p-i-n heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3017-3023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparative electroluminescence and photoluminescence measurements were performed on Si/Si0.7Ge0.3 p-i-n single quantum well structures, and on one p-i-n and one undoped multiple quantum well structure in a wide temperature range. The samples were grown pseudomorphically by molecular beam epitaxy, and mesa diodes for electroluminescence and photocurrent measurements were fabricated. In electroluminescence, optical emission comes primarily from the SiGe quantum wells whereas no emission from Si is observed except for high temperatures of ≈200 K and up. All p-i-n structures exhibit maximum emission intensities in a temperature range between 80 K and 220 K, depending on the quantum well width. This temperature characteristic is very different from undoped quantum well samples. A model is discussed that accounts satisfactorily for all observed temperature dependent data. As an essential feature, the model includes Auger recombination in addition to radiative recombination in the n+ and p+ sides of the junctions and in the SiGe quantum well due to the high electron or hole densities in these regions. Photocurrent spectra due to single quantum wells are measured showing the SiGe absorption threshold in addition to the Si threshold. Quantitative fits to these spectra yield threshold energies for SiGe and Si consistent with the electroluminescence spectra. The question of how photogenerated excess holes that are bound in a quantum well can escape the well at 4.2 K to yield the measured photocurrents is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363129
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature-dependent lifetime distribution of the photoluminescence S-band in porous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4167-4170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the recombination mechanism of the visible photoluminescence (PL) S-band in p-doped porous Si layers by time-resolved photoluminescence. From the observed "stretched-exponential'' PL decays we present a simple yet accurate evaluation method for lifetime distributions G(τ) and average recombination lifetimes 〈τ〉. The average lifetimes feature a strong temperature dependence and a characteristic thermal activation energy of 10–20 meV for low temperatures. Our results are discussed within the models of quantum-confined exciton recombination and surface state recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355999
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  • 3
    Electronic Resource
    Electronic Resource
    Nitrogen Compounds in Domestic Heating Oil Distillate (1952)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 44 (1952), S. 2606-2609 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50515a038
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  • 4
    Electronic Resource
    Electronic Resource
    Amino-terminal arm of the repressor: a proton NMR study (1984)
    s.l. : American Chemical Society
    Biochemistry 23 (1984), S. 5090-5095 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00317a002
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  • 5
    Electronic Resource
    Electronic Resource
    An engineered intersubunit disulfide enhances the stability and DNA binding of the N-terminal domain of .lambda. repressor (1986)
    s.l. : American Chemical Society
    Biochemistry 25 (1986), S. 5992-5998 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00368a024
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  • 6
    Electronic Resource
    Electronic Resource
    Semiconductor nanostructures defined with self-organizing polymers (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6057-6059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a technique to create very small semiconductor nanostructures, with sizes far beyond the limit of conventional optical lithography processes, by the use self-assembling diblock copolymers as nanolithographic masks. Quantum structures with very high aspect ratio of 1:10 were fabricated by dry etching. In a first step, so-called diblock copolymer micelles were generated in a toluene solution. These micelles were loaded by a noble-metal salt. After dipping a substrate into this solution, a monolayer of ordered micelles is generated, covering almost the complete surface. After treatment in a hydrogen plasma all of the organic components are removed and only crystalline metal clusters of (approximate)12 nm size remain. This metal cluster mask can be used directly in a chlorine dry etching process to etch cylinders in GaAs and its alloys of In and Al. It is also possible to etch through a quantum well layer underneath the surface in order to produce quantum dots. The resulting nanostructures were investigated by scanning force microscopy, by high resolution transmission electron microscopy, and also by low temperature photoluminescence spectroscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465117
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  • 7
    Electronic Resource
    Electronic Resource
    Measurement of time-resolved photoluminescence of semiconductors using correlational analysis (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2890-2893 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a new method for measuring time-resolved photoluminescence on a time scale of microseconds and milliseconds using correlational analysis, and we demonstrate it to work on porous silicon and GaP:Fe. We modulate the pumping laser with a pseudorandom binary sequence which yields correlational properties similar to white noise. The photoluminescence decay is computed via cross correlation of the detector signal with the pumping sequence. The presented method is highly sensitive, simple in application, and inexpensive.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144633
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6256-6260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The frequencies and dampings of the zone-center optical phonons E2 and A1(LO) in wurtzite-type GaN and AlN layers have been measured by Raman spectroscopy in the temperature range from 85 to 760 K. The GaN layer was grown by metalorganic vapor phase epitaxy and the AlN layer by molecular beam epitaxy both on sapphire substrate. The experimentally obtained frequencies and dampings are modeled by a theory taking into account the thermal expansion of the lattice, a symmetric decay of the optical phonons into two and three phonons of lower energy, and the strain in the layers induced by the different thermal expansion coefficients of layer and substrate. The results were used to determine the local temperature of a GaN pn diode in dependence on the applied voltage. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371681
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  • 9
    Electronic Resource
    Electronic Resource
    Optical investigation of quantum-well fluctuations in In0.53Ga0.47As/InP superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3374-3379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence spectra of In0.53Ga0.47As/InP multiple quantum wells with well widths of 70–160 A(ring) and barrier widths of 20–400 A(ring) exhibit narrow doublet lines or more complex line structure. Such spectra are studied as a function of temperature, excitation level, and wavelength, and by photoluminescence excitation spectroscopy. It is shown that all lines are due to intrinsic excitons and that the multiplicity of the spectra arises from fluctuations in the quantum wells along the growth direction, which we identify with compositional changes of the InGaAs. The multiline spectra offer a convenient way to study interwell electron-hole transfer, and this process is shown to be efficient in the present crystals up to barrier widths of at least 200 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339843
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  • 10
    Electronic Resource
    Electronic Resource
    Near-gap photoluminescence of GaAs grown directly on silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5110-5116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a detailed study using photoluminescence and photoluminescence excitation of metalorganic chemical vapor deposition GaAs grown directly on Si substrates. Temperature variation and selective excitation allow reliable assignment of spectral features. This assignment permits measurements of strain and strain uniformity, identification of impurities, and assessment of general material quality. In 2–5-μm-thick layers similar spectra are observed with little variation from substrate character. Near 4 K, most samples show one of the two split valence-band features plus defect recombination, always including carbon. Strain uniformity varies widely and correlates with substrate thickness. The range of spectra observed from a variety of samples and guidelines for interpretation of nonresonantly excited spectra are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342418
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