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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence study of acceptor-carbon complexes in irradiated silicon: Aluminum-related defects (1989)
    Springer
    Applied physics 48 (1989), S. 25-30 
    Details
    ISSN: 1432-0630
    Keywords: 71.55Ht ; 78.55-m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper reports photoluminescence studies on two defects, All at 0.836 eV and Al2 at 0.886 eV, created by aluminum complexing in irradiated silicon after thermal annealing at around 300 °C. The optical data include perturbation spectroscopy (uniaxial stress and magnetic field) revealing rhombic I (Al1) or monoclinic I (Al2) site symmetry of the defects. For Al a carbon isotope shift in the no-phonon line is detected. These and other data are discussed in conjunction with Ga- or B-related defects exhibiting similar optical features.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617760
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  • 2
    Electronic Resource
    Electronic Resource
    Origin of the 1.080 eV (I"2) photolumiscence line in irradiated silicon
    Amsterdam : Elsevier
    Physica B+C 116 (1983), S. 252-257 
    Details
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4363(83)90255-3
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature-dependent lifetime distribution of the photoluminescence S-band in porous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4167-4170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the recombination mechanism of the visible photoluminescence (PL) S-band in p-doped porous Si layers by time-resolved photoluminescence. From the observed "stretched-exponential'' PL decays we present a simple yet accurate evaluation method for lifetime distributions G(τ) and average recombination lifetimes 〈τ〉. The average lifetimes feature a strong temperature dependence and a characteristic thermal activation energy of 10–20 meV for low temperatures. Our results are discussed within the models of quantum-confined exciton recombination and surface state recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355999
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  • 4
    Electronic Resource
    Electronic Resource
    Photocurrent and photoluminescence measurements in the near-band-edge region of 6H GaN (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4397-4402 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical transitions near the band edge in molecular-beam epitaxy grown 6H GaN films on sapphire have been studied by photocurrent (PC) and photoluminescence (PL) measurements. The low-temperature PC spectra show well-resolved free-exciton transitions, which allow us to determine the A, B, and C free-exciton energies and the corresponding direct band gaps. PL measurements were performed to check the assignment of the excitonic transitions and to derive strain-dependent excitonic parameters from the energetic position of the free A exciton transition, which serve as an input to the fit function for the PC spectra. Variation of the sample temperature between 5 and 300 K allows us to extract the temperature dependence of the band gap. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367232
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  • 5
    Electronic Resource
    Electronic Resource
    The influence of temperature, humidity and simulated rain on the performance of thiameturon-methyl (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Weed research 30 (1990), S. 0 
    Details
    ISSN: 1365-3180
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The influence of temperature, humidity and simulated rain on thiameturon-methyl activity was examined on white mustard (Sinapis alba L.) plants grown in controlled environment cabinets or in a glasshouse. The performance of thiameturon-methyl was markedly improved with increasing temperature and humidity. Addition of a non-ionic surfactant increased the activity of thiameturon-methyl, reduced the in fluence of humidity on herbicide performance but had no effect on the influence of tempera ture on herbicide activity. Increasing the amount of simulated rain from 0.11 to 3 mm reduced the activity of thiameturon-methyl. However, reduction in activity by 3 mm rain became less pronounced as the interval between herbicide application and rain treatment was in creased from 0.5 to 6 h. With a 6-h interval 3 mm rain had little effect. Rain intensity was found only to have a minor influence on the rainfast-ness of thiameturon-methyl.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3180.1990.tb01712.x
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  • 6
    Electronic Resource
    Electronic Resource
    Method for assessing the influence of additives on the effect of foliar-applied herbicides (1987)
    Oxford, UK : Blackwell Publishing Ltd
    Weed research 27 (1987), S. 0 
    Details
    ISSN: 1365-3180
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The principles of parallel-line assay were employed lo assess the influence of various additives on the herbicidal activity of alloxydim-sodium, fluazifop-butyl and sethoxydim on winter barley (Hordeum vulgare L. cv. Igri). The dose-response curves of the herbicides were parallel, only differing in their horizontal location, i.e., the relative potencies of the herbicide preparations were independent of the dose-response level considered. Except for one herbicide-additive combination, increasing the concentration of the additives in the spray solution increased herbicide activity. The prospects of using the parallel-line assay in studies examining the effect of additives on the activity of herbicides and its application in other kinds of herbicide studies are discussed. Méthode d'estimation de l'influence d'adjuvants sur l'efficacite de certains herbicides appliqués en pulvérisation foliaireLe principe d'essai des lignes parallèles a été utilise pour estimer l'influence d'adjuvants variés sur l'activité herbicide de l'alloxydine sodium, le fluazifop-butyl et la séthoxydine en orge d'hiver (Hordeum vulgare L. cv. Igri). Les courbes de réponse à la dose entre les herbicides étaient parallèles, différant seulement dans leur localisation horizontale, par exemple les puissances relatives des préparations herbicides étaient indépendantes du niveau de la réponse à la dose pris en considération. Excepté pour un mélange herbicide-adjuvant, l'activité des herbicides a augmenté quand on a augmenté la concentration en adjuvants dans la bouillie de pulvérisation. Les possibilités d'utilisation de cette méthode des parallèles pour étudier l'effet des adjuvants sur l'activité des herbicides, et son application à d'autres secteurs d'étude des herbicides, fait l'objet d'une discussion. Eine Methode zur Beurteilung des Einflusses von Additiven auf die Wirkung von blattwirksamen HerbizidenBasierend auf den Grundlagen von ‘parallel line’-Bioassays wurde der Einfluss verschiedener Additive auf die herbizide Wirkung von Alloydim-Natrium, Fluazifop-Butyl und Sethoxydim auf Wintergerste (Hordeum vulgare L. cv. Igri) untersucht. Die Dosis/Wirkungs—Kurven waren parallel; sie unterschieden sich nur in ihrer horizontalen Lage, d.h. die relative Wirksamkeit der Herbizidformulierungen war unabhängig von einem bestimmten Dosis/Wirkungs–Niveau. Nur für eine Herbizid/Additiv—Kombination wurde eine zunchmende Aktivität der Herbizide mit steigender Additivkonzentration in der Spritzbrühe gefunden. Es werden die Möglichkeiten der Verwendung von ‘parallel line’-Bioassays zum Studium des Einflusses von Additiven auf den Effekt von Herbiziden sowie für andere Herbziduntersuchungen diskutiert.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3180.1987.tb01593.x
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  • 7
    Electronic Resource
    Electronic Resource
    A model for the Fe-related emission at 3057 cm−1 in GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5703-5705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present Fourier transform infrared photoluminescence (PL) and absorption studies on GaAs:Fe to analyze the origin of the Fe-related emission at 3057 cm−1. Temperature-dependent PL spectra show additional hot lines and a characteristic phonon sideband linked to this Fe-related peak. Time-resolved studies, using the 1.06 μm line of a Nd:YAG laser for excitation, reveal a decay time of 1.9±0.3 ms. The long lifetime and the fine-structure splitting fit a model where the transitions take place between the 4T1 excited state and the 6A1 ground state of Fe3+ (3d5) in tetrahedral environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350504
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  • 8
    Electronic Resource
    Electronic Resource
    Measurement of time-resolved photoluminescence of semiconductors using correlational analysis (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2890-2893 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a new method for measuring time-resolved photoluminescence on a time scale of microseconds and milliseconds using correlational analysis, and we demonstrate it to work on porous silicon and GaP:Fe. We modulate the pumping laser with a pseudorandom binary sequence which yields correlational properties similar to white noise. The photoluminescence decay is computed via cross correlation of the detector signal with the pumping sequence. The presented method is highly sensitive, simple in application, and inexpensive.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144633
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  • 9
    Electronic Resource
    Electronic Resource
    Semiconductor nanostructures defined with self-organizing polymers (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6057-6059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a technique to create very small semiconductor nanostructures, with sizes far beyond the limit of conventional optical lithography processes, by the use self-assembling diblock copolymers as nanolithographic masks. Quantum structures with very high aspect ratio of 1:10 were fabricated by dry etching. In a first step, so-called diblock copolymer micelles were generated in a toluene solution. These micelles were loaded by a noble-metal salt. After dipping a substrate into this solution, a monolayer of ordered micelles is generated, covering almost the complete surface. After treatment in a hydrogen plasma all of the organic components are removed and only crystalline metal clusters of (approximate)12 nm size remain. This metal cluster mask can be used directly in a chlorine dry etching process to etch cylinders in GaAs and its alloys of In and Al. It is also possible to etch through a quantum well layer underneath the surface in order to produce quantum dots. The resulting nanostructures were investigated by scanning force microscopy, by high resolution transmission electron microscopy, and also by low temperature photoluminescence spectroscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465117
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of boron bound excitons in boron-implanted and annealed natural IIa diamonds (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2668-2670 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence at 77 K was used to study the optical properties of ion-implanted and annealed natural type IIa diamonds. The substrates were implanted at room temperature with 12C+, 11B+, 31P+, and 75As+ -ions with energies of up to 350 keV and doses of up to 3×1013 cm−2. After annealing at 1200 °C, the cathodoluminescence spectra show a number of transitions which are induced by the radiation damage independent of the implanted ion species. Only in the B+implanted samples are there two transitions related to the implanted ion species: the 4.5 eV band and the boron bound exciton. The appearance of the bound exciton spectrum demonstrates the presence of isolated boron on substitutional lattice sites implying electrical acceptor activity. Our annealing studies indicate a minimum annealing temperature of 1000 °C for the activation of the implanted boron atoms onto the acceptor states. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120173
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