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  • 1
    Electronic Resource
    Electronic Resource
    The mixing of iron and cobalt during mechanical alloying (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2978-2983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At the early stage of mechanical alloying of α-Fe and ε-Co lamellar layers of the initial phases are formed. As the thickness of the layers decreases the interdiffusion of the elements starts and a disordered crystalline Fe-Co solid solution is formed. The progress of the solid state reaction has been monitored by Mössbauer spectroscopy, x-ray diffraction, and measurements of the saturation magnetization. The experimental data allow calculation of the change of fractions of material with different local compositions as the alloying proceeds. The main results are that Co diffuses into the α-Fe while Fe does not diffuse into the ε-Co. In spite of a much lower negative heat of mixing, the reaction proceeds in a similar way to the formation of amorphous NiZr during mechanical alloying.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351504
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  • 2
    Electronic Resource
    Electronic Resource
    Phase formation and thermal stability of mechanical alloyed iron–tantalum (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3512-3518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron-rich iron–tantalum solid solutions were prepared by mechanical alloying of elemental powder mixtures. At low Ta concentrations the alloys form a crystalline solid solution with bcc structure. At higher contents additionally an amorphous phase appears. The phase fractions and their compositions were determined by x-ray diffraction and Mössbauer spectroscopy. The thermal stability of the supersaturated solid solutions was investigated by differential scanning calorimetry measurements. Upon annealing, the solid solutions are found to establish a metastable equilibrium by precipitation of the amorphous phase before transformation to the equilibrium phases sets in. The results are discussed on the basis of the phase stabilities of the participating stable and metastable phases. It is concluded that the phase formation in this system during milling can be described by a smeared-out polymorphous transition to the amorphous phase with increasing solute content rather than by a metastable phase equilibrium. The possibility of grain boundary wetting with the amorphous phase is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369710
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  • 3
    Electronic Resource
    Electronic Resource
    Tailoring the surface morphology of amorphous thin films by appropriately chosen deposition conditions (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2779-2784 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous thin film growth on a substrate by cocondensation is dominated by growth instabilities arising from self shadowing and surface diffusion, and these lead to pronounced three dimensional growth. It is possible to influence structure formation profoundly through systematic variation of the deposition characteristics of the particles, i.e., the deposition energy, the deposition angle, and the angle distribution. Experimentally, this can be achieved by varying the deposition technique from vapor deposition to sputtering, and changing the deposition angle with or without simultaneous rotation of the substrate. While roughening can be enhanced by oblique particle incidence, sputtered amorphous films have smooth surfaces. This behavior can be understood in terms of shadowing and energy transfer effects as illustrated by Monte Carlo and continuum growth models. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446235
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal expansion measurements of liquid metallic samples measured under microgravity conditions (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2110-2113 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report the method and first examples of thermal expansion measurements of liquid metallic samples measured under μg conditions. The experiments were performed in an electromagnetic levitation facility (TEMPUS facility) on board the space orbiter Columbia (mission MSL-1). The sample was imaged by a high-resolution CCD camera with on-board recording. After the mission the video tapes were analyzed by digital image processing. First measurements were made with a molten Pd78Cu6Si16 sample in the temperature range of about 800 to 1150 °C. The measured value of the coefficient of volume expansion is 8.9×10−5/°C in this temperature range. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148906
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetization, magnetoresistance, and x-ray diffraction measurements of discontinuous [Ni80Fe20/Ag] multilayers (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4765-4765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films for magnetic sensor application require a high sensitivity at low magnetic fields, for example, realized by Permalloy films. Promising candidates for a further improvement are discontinuous multilayers, first reported by Hylton et al. In our study, we report on [2.5 nm Ni80Fe20/y nm Ag] multilayers with the spacer layer thickness y ranging from 1.2 nm to 6.0 nm. The multilayers were electron beam deposited in UHV at different temperatures. The substrates used are thermally oxidized silicon wafers. The magnetization is obtained using a vibrating sample magnetometer (VSM), the magnetoresistance is measured at room temperature with the Montgomery method. Low and high angle x-ray diffraction measurements are performed in a Siemens D-5000 diffractometer. The samples are annealed ex situ between room temperature and 340 °C. The magnetoresistance is maximal after annealing the samples at a specific temperature, which decreases with increasing Ag-spacer thickness y. Moreover, the GMR decreases if the multilayers are deposited at elevated temperatures (100–200 °C). We also report on the dependence of the GMR on the interface roughness (σ≈0.5 nm rms) which we deduce from the small angle x-ray diffraction measurements. For a characterization of the reliability, we also investigated the dependence of the GMR on aging at 100 °C for several hours. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361665
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  • 6
    Electronic Resource
    Electronic Resource
    Intrinsic giant magnetoresistance of mixed valence La-A-Mn oxide (A=Ca,Sr,Ba) (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6925-6928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large intrinsic magnetoresistance has been found near the ferromagnetic transition of metallic manganese oxides with perovskite-type crystal structure. The magnetic and transport properties were measured on bulk and thin-film La1−xAxMnO3+δ with A=Ca,Sr,Ba. Assuming the double-exchange model proposed by Zener [Phys. Rev. 81, 440 (1951); 82, 403 (1951)], the strong dependence of the transport properties on the magnetic field and also on the chemical composition is attributed to the mixed Mn3+/Mn4+ valence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358118
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetoresistance of granular Cu-(Co,Fe) and Cu-Co-B (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6824-6824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Giant magnetoresistance (GMR) is known to occur in alloys consisting of superparamagnetic precipitates in a metallic matrix. This had been demonstrated for the first time for Cu-Co prepared as co-sputtered thin films and later for rapidly quenched alloys. For Cu-Fe no GMR has been reported even in multilayer systems. In order to study the transition from Cu-Co to Cu-Fe in more detail we prepared quasibinary Cu90Co10−xFex ribbons by conventional melt spinning followed by an annealing treatment to precipitate Co-Fe clusters in the Cu matrix. The particle sizes of the ferromagnetic phase have been determined by fitting the magnetization and magnetoresistance curves with a Langevin function. The saturation magnetization increases with increasing Fe content x for x≤4 as expected from the Slater–Pauling curve. However, a strong decrease of the magnetization is observed at high Fe contents. The GMR effect continuously decreases with increasing Fe content and for x(approximately-greater-than)0.7 no GMR is observed, similar to Cu-Fe multilayers. Small B additions were added to Cu-Co in order to improve the homogeneity of the as-quenched ribbons. For these samples the magnetoresistance is suppressed even by small B additions below 3 at. %. This is different from the Au-Co system, where B additions of up to 20% enhance the GMR effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358142
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  • 8
    Electronic Resource
    Electronic Resource
    Initial stages of epitaxial growth of Y-stabilized ZrO2 thin films on a-SiOx/Si(001) substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2902-2910 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial stages of crystallization and growth of epitaxial Y-stabilized ZrO2 (YSZ) thin films on Si (001) substrates covered with amorphous native oxide were investigated by transmission electron microscopy (TEM) and reflection high-energy electron diffraction (RHEED). The YSZ crystallizes by solid-phase epitaxy with an initial thickness of 1 nm. The crystallization is initially incomplete, yielding both epitaxial and disordered regions of the YSZ film. In situ RHEED measurements showed the lattice parameter of the YSZ gradually decreased during growth, reaching the bulk value at a film thickness of 5–7 nm. For a larger thickness, the film is fully elastically relaxed. TEM revealed misfit dislocations at the YSZ/Si interface. The average spacing between misfit dislocations with Burgers vector b=1/2 〈110〉 was measured as 8.3 nm, showing epitaxial misfit strain to be fully accommodated by misfit dislocations. Thermal strain introduced during cooldown from the deposition temperature is fully elastically accommodated. For YSZ thicknesses below 7 nm, the thickness of the regrown layer of silicon oxide at the YSZ/Si interface is 0–0.5 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356183
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  • 9
    Electronic Resource
    Electronic Resource
    Tunnel-magnetoresistance system with an amorphous detection layer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1701-1703 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied magnetic tunnel junctions using an amorphous CoFeNiSiB soft magnetic layer. At room temperature a tunnel-magnetoresistance ratio of 12% was achieved with a switching field of the amorphous layer of 12 Oe. The effect could be enhanced up to 22% by annealing. Investigations on single amorphous layers show a thermal stability up to 350 °C annealing temperature even for very thin layers. Due to the special preparation technique, an in-plane anisotropy is induced resulting from an oblique-incidence effect which presumably affects the short-range order of the amorphous phase. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1426236
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  • 10
    Electronic Resource
    Electronic Resource
    New UHV dilatometer for precise measurement of internal stresses in thin binary-alloy films from 20 to 750 K (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 2012-2017 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a new dilatometric device for internal stress measurements of thin binary-alloy films, able to operate in ultrahigh vacuum in the temperature range 20–750 K. Using a three-terminal capacitor method, the displacement of the free end of a thin cantilever substrate is monitored by the capacitance change. With a sensitivity of 1 nm for substrate displacements, the resolution for stress detection is 105 Pa in a 100-nm-thick film. Simultaneously with the stress measurement, the electrical resistivity of the film can be determined on the same substrate. The direct comparison of electrical and mechanical thin-film properties gives the ability to obtain additional information on the growth process and on the thin-film structure. Measurements of a crystalline Cu film and an amorphous Zr20 Co80 alloy film are shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140017
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