ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
We describe a new dilatometric device for internal stress measurements of thin binary-alloy films, able to operate in ultrahigh vacuum in the temperature range 20–750 K. Using a three-terminal capacitor method, the displacement of the free end of a thin cantilever substrate is monitored by the capacitance change. With a sensitivity of 1 nm for substrate displacements, the resolution for stress detection is 105 Pa in a 100-nm-thick film. Simultaneously with the stress measurement, the electrical resistivity of the film can be determined on the same substrate. The direct comparison of electrical and mechanical thin-film properties gives the ability to obtain additional information on the growth process and on the thin-film structure. Measurements of a crystalline Cu film and an amorphous Zr20 Co80 alloy film are shown.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1140017
Permalink