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  • 1
    Electronic Resource
    Electronic Resource
    Microwave dielectric loss studies on lithium-zinc ferrites (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4053-4055 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave dielectric parameters are measured for lithium-zinc ferrites with chemical formula Li0.5−x/2Fe2.5−x/2ZnxO4 (x=0.0, 0.1, 0.3, 0.5, 0.6). All the samples except x=0.5, show an increase in the dielectric loss with temperature. A relaxation-type mechanism is observed for x=0.5. The results are compared with the low-frequency dielectric constant and loss.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348415
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  • 2
    Electronic Resource
    Electronic Resource
    Current drive experiments in the helicity injected torus (HIT-II) : Review,Tutorial and Invited Papers from the 43rd Annual Meeting of the APS Division of Plasma Physics (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 2006-2013 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Helicity Injected Torus [HIT-II: T. Jarboe et al., Phys. Plasmas 5, 1807 (1998)] is a low-aspect-ratio tokamak capable of both inductive (ohmic) and Coaxial Helicity Injection (CHI) current drive. HIT-II is modest in size (major radius R=0.3 m, minor radius a=0.2 m, and on-axis toroidal field of up to 0.5 T), but has demonstrated 200 kA of toroidal plasma current, using either CHI or induction separately. The loop voltage, boundary flux, and plasma equilibrium are controlled by a real-time flux feedback system. HIT-II ohmic plasmas exhibit reconnection events during both the current ramp-up and decay, events that relax the current profile while conserving the magnetic helicity. A new operating regime for CHI plasmas, using a double-null divertor (DND) boundary flux, has been explored. DND CHI plasmas exhibit good shot-to-shot reproducibility, low impurity content, minimal shorting current in the absorber region, and EFIT-reconstructed equilibria consistent with significant closed-flux core regions [EFIT: L. Lao et al., Nucl. Fusion 25, 1611 (1985)]. HIT-II DND CHI discharges also exhibit a continuous n=1 mode at the outer midplane, a mode that has been correlated experimentally with current-profile relaxation. A detailed explanation of helicity injection current drive has been developed, which is consistent with experimental observations of HIT and HIT-II discharges. According to this mechanism, asymmetric distortion of the n=1 mode structure generates current drive in the core plasma by dynamo action, relaxing the CHI-driven current profile. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448832
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  • 3
    Electronic Resource
    Electronic Resource
    A simple fast pulse gas valve using a dynamic pressure differential as the primary closing mechanism (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1410-1413 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article we describe a simple fast pulse gas valve developed for use in a plasma discharge experiment. The valve delivers 1017–1019 molecules per pulse varied by changing the voltage on the electromagnetic driver power supply. Valve pulse widths are observed to be less than 300 μs full width at half maximum with a rise time of less than 100 μs resulting in a maximum gas flow rate of ∼1022 molecules per second. An optical transmission technique was used to determine the mechanical opening and closing characteristics of the valve piston. A fast ionization gauge (FIG) was used for diagnosis of the temporal character of the gas pulse while the total gas throughput was determined by measuring the change in pressure per pulse in a small test chamber with a convectron tube gauge. Calibration of the FIG was accomplished by comparing the net change in pressure in a large chamber as measured by the FIG to the net change in pressure in a small test chamber as measured by the convectron tube gauge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144053
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  • 4
    Electronic Resource
    Electronic Resource
    Synthesis of .DELTA.9-isoambrettolide and its isomers from 1,9-cyclohexadecadiene (1972)
    s.l. : American Chemical Society
    The @journal of organic chemistry 37 (1972), S. 3846-3848 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00797a017
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of surface proximity on end-of-range loop dissolution in silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1591-1593 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface proximity on the dissolution of end-of-range dislocation loops in silicon was investigated by transmission electron microscopy (TEM). A layer of dislocation loops was formed at a depth of 2600 Å by annealing a Si wafer amorphized by a 1015 cm−2, 120 keV, and a 1015 cm−2, 30 keV dual Si+ implant for 30 min at 850 °C. The wafer was diced into 1 cm×1 cm pieces and polished by a chemical–mechanical polishing technique to decrease the loop depth to 1800 and 1000 Å. The samples were then furnace annealed at 900 and 1000 °C in N2 gas. Quantitative TEM analysis revealed that the density of small loops decreases as the loop band is brought closer to the surface. The flux of interstitials to the surface varied inversely with loop depth, indicating that the loop dissolution is diffusion limited. Assuming that the loops maintain a supersaturation of interstitials (CIL) around them, and by integrating the measured interstitial flux from the loop layer to the surface, the relative supersaturation of interstitials near the loop layer (CIL/CI*) was extracted 900 and 1000 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123626
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of the end-of-range loop layer depth on the evolution of {311} defects (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 700-702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interactions between end-of-range dislocation loops and {311} defects as a function of their proximity were studied. The dislocation loops were introduced at 2600 Å by a dual 1×1015 cm−2, 30 keV and a 1×1015 cm−2, 120 keV Si+ implantation into silicon followed by an anneal at 850 °C for 30 min. The depth of the loop layer from the surface was varied from 2600 to 1800 Å and 1000 Å by polishing off the Si surface using a chemical–mechanical polishing (CMP) technique. A post-CMP 1×1014 cm−2, 40 keV Si+ implantation was used to create point defects at the projected range of 580 Å. The wafers were annealed at 700, 800, and 900 °C, and plan-view transmission electron microscopy study was performed. It was found that the number of interstitials in {311} defects decreased as the projected range damage was brought closer to the loop layer, while the number of rectangular elongated defects (REDs) increased. Experimental investigation showed that REDs are formed at the end of range. It is concluded that the interstitials introduced at the projected range are trapped at the end of range. The REDs are formed due to the interactions between the interstitials and the pre-existing dislocation loops. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122992
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  • 7
    Electronic Resource
    Electronic Resource
    An investigation of genetic variation in Carthamus lanatus in New South Wales, Australia, using intersimple sequence repeats (ISSR) analysis (2003)
    Oxford, UK : Blackwell Science Ltd
    Weed research 43 (2003), S. 0 
    Details
    ISSN: 1365-3180
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Summary Carthamus lanatus is a widespread and troublesome weed of crops and pastures in Australia. It is viewed as a target for both inundative and classical biological control. As fungal biological control agents are often specific in terms of their host range, the genetic variation within the host may be important in their successful deployment. The detection of genetic variation in populations of C. lanatus from New South Wales was studied using polymerase chain reaction (PCR)-based, intersimple sequence repeats (ISSR) analysis. DNA extracted from plant samples from 11 locations in New South Wales was compared with one sample from Western Australia and one accession of the closely related crop plant, safflower. The analysis indicated that there were two distinct groups of C. lanatus that correlated with location (northern and southern regions). Within-group genetic diversity, as determined by the Shannon genetic diversity index, was low at 0.33 in the southern group and 0.22 in the northern group. The presence of these groups may have implications for the biological control of C. lanatus using exotic fungi. In any screening of candidate agents, representatives of these populations should be included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3180.2003.00335.x
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  • 8
    Electronic Resource
    Electronic Resource
    Identification of Serum Albumin in Protein Complexes Resistant to Dissociation by Sodium Dodecyl Sulfate (1981)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 46 (1981), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Bovine serum albumin has been identified by specific antibody in complexes resistant to dissociation by sodium dodecyl sulfate. Serum albumin containing aggregates were first separated fron other proteins by electrophoresis in a sodium dodecyl sulfate gel system and then reacted with specific antibody by electroimmuno-diffusion on cellulose acetate plates. The antibody retained its ability to recognize serum albumin after the complexes had been exposed to detergent and electrophoresis. The procedure is rapid and complexes can be visualized within 2 hr of the completion of the gel electrophoretic run.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1981.tb15406.x
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  • 9
    Electronic Resource
    Electronic Resource
    A neutron sensor based on superheated droplets
    Amsterdam : Elsevier
    Radiation Measurements 23 (1994), S. 753-755 
    Details
    ISSN: 1350-4487
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1350-4487(94)90014-0
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  • 10
    Electronic Resource
    Electronic Resource
    Do sister forks of bidirectionally growing replicons proceed at unequal rates?
    Amsterdam : Elsevier
    Experimental Cell Research 168 (1987), S. 555-560 
    Details
    ISSN: 0014-4827
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0014-4827(87)90028-0
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