Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2214-2215
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Oxynitride (SiOxNy) insulators have been obtained by low-energy nitric oxide ion (NO+) implantation in Si substrates prior to thermal oxidation. Characterization by Fourier transform infrared (FTIR) and secondary ion mass spectrometry (SIMS) analyses reveal the presence of Si–O, Si–N, and Si–N–O bonds in the high quality 37 nm silicon oxynitride films. The dielectric constant=5.5, effective charge density=7×1010 cm−2 and breakdown E-fields of 3 MV/cm were determined by capacitance–voltage (C–V) and current–voltage (I–V) measurements, respectively, indicating that the SiOxNy films formed are suitable gate insulators for metal-oxide-semiconductor (MOS) devices. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117169
Permalink
|
Location |
Call Number |
Expected |
Availability |