Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 2688-2690
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigated the interface roughness of InP/As quantum wells using photoluminescence and secondary ion mass spectroscopy. Typical photoluminescence spectra consist of multiple lines. The energies of the observed peaks have a remarkable behavior; namely, both the peak energies and the separations between peaks change from sample to sample. We discuss the interpretation of the observed emission lines in connection with questions such as interface roughness, island formation and lateral confinement. We also discuss the strong influence of parameters such as the growth temperature and the substrate orientation on the interface roughness.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110421
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