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  • 1
    Monograph available for loan
    Monograph available for loan
    The history of hydrosphere (1998)
    Moskau : Scientific World
    Details Availability
    Call number: PIK N 454-00-0293
    Type of Medium: Monograph available for loan
    Pages: 368 p.
    ISBN: 5891760290
    Language: English
    Location: A 18 - must be ordered
    Branch Library: PIK Library
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  • 2
    Monograph available for loan
    Monograph available for loan
    Metodika kriolitologicheskikh issledovanij (1983)
    Moskva : Nedra
    Details Availability
    Call number: AWI G3-96-0447
    Type of Medium: Monograph available for loan
    Pages: 199 S. : graph. Darst.
    Language: Russian
    Branch Library: AWI Library
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical isolation and transparency in ion-irradiated p-InGaP/GaAs/InGaAs structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7354-7356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: He+-ion irradiation was applied for electrical isolation of p-In0.49Ga0.51P in InGaP/GaAs/InGaAs structures. Sheet resistance of approximately 1×106 Ω/(square, open) was achieved with doses above 1×1013 cm−2 at 100 keV. Thermal stability of isolation was maintained for annealing temperatures up to 500 °C. Photoluminescence results show that InGaP transparency to InGaAs/GaAs quantum-well emission is closely related to sheet resistance changes in the irradiated structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326462
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical isolation of n-type GaAs layers by proton bombardment: Effects of the irradiation temperature (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4757-4760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from −100 to 300 °C was investigated. The threshold dose for the isolation (Dth) was found almost identical for irradiation at temperatures from −100 to 220 °C. At 300 °C, a dose of ≅1.3 times higher is required for the isolation threshold. In samples irradiated to a dose of Dth at −100 °C or nominal room temperature, the isolation is maintained up to a temperature of (approximate)250 °C. In those samples irradiated at 300 °C it persists up to (approximate)350 °C. For doses of 3Dth or above, the stability of the isolation is limited to temperatures of 450–650 °C, irrespective of the irradiation temperature (Ti). For practical applications where doses in excess to 5Dth are usually employed, the irradiation temperature (from −100 to 300 °C) has only a minor effect on the formation and thermal stability of the electrical isolation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368817
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical isolation of a silicon δ-doped layer in GaAs by ion irradiation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1917-1919 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical isolation of a n-type δ-doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the δ-doped layer was found to be (approximate)2 times higher than that predicted for thick doped layers of similar carrier concentration. The thermal stability of the isolation, i.e., the persistence of sheet resistance Rs at values 〉109Ω/(square, open) after subsequent thermal annealing, is limited to temperatures below 400 °C. This temperature limit for the thermal stability Tsm is markedly lower than those observed in wider doped layers in which Tsm is ≅650 °C. A previously isolated δ-doped layer presents p-type conductivity after annealing at temperatures 〉600 °C . © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124870
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical activation of carbon in GaAs: Implantation temperature effects (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1700-1702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon was implanted into GaAs at the energy of 1 MeV with doses between 1×1013 and 2×1015 cm−2 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at 80 K compared to those implanted at RT or 300 °C, attaining a maximum hole concentration of 2×1019 cm−3. The redistribution of the C profile during rapid thermal annealing at temperatures from 700 to 950 °C for 10 s was found negligible, independently of the implantation temperature. Similar improvements in the electrical properties were also verified in samples implanted at 80 K with a lower energy of 60 keV. We consider that despite the light mass of C ions, the reduced dynamic annealing at 80 K allows the accumulation of an abundance of As vacancies, which assist the C activation as a p-type dopant. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356729
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ions (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 650-655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of the electrical isolation in n-type GaAs layers irradiated with ions of different mass is compared. The irradiations were performed with proper doses of 1H+, 4He+, or 11B+ ions to create specific damage concentration level which lead to: (i) the trapping of practically all the carriers (Rs (approximate)108 Ω/(square, open)), (ii) the onset of hopping conduction (Rs (approximate)108 Ω/(square, open)), and (iii) a significant hopping conduction (Rs (approximate)106 Ω/(square, open)). Irrespectively of the ion mass, the temperature range for which the isolation is preserved, i.e., Rs 〉108 Ω/(square, open), extends up to 200 or (approximate) 600 °C, respectively, for the cases (i) and (ii). In case (iii), this range comprises temperatures from (approximate) 400 to 650 °C. Annealing stages at 200 and 400 °C recover in a great extent the conductivity and improve the carrier mobility in low dose irradiated samples [case (i)]. In samples irradiated to higher doses [cases (ii) and (iii)], the conductivity recovers in a single stage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364229
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical isolation in GaAs by light ion irradiation: The role of antisite defects (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 535-537 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning of the irradiation, Rs increases with the accumulation of the dose. After reaching ≈109 Ω/(D'Alembertian), Rs saturates, forming a plateau. This plateau is succeeded by a decreasing of Rs with the increase of the dose, denoting that conduction via damage-related mechanisms is taking place. The threshold dose to convert the conductive layer to a highly resistive one at room temperature or at 100 °C is found to scale with the inverse of the estimated number of displaced lattice atoms along the depth of the doped layer. Antisite defects formed by the replacement collisions are invoked to play the major role in isolation formation in GaAs by virtue of their lower sensitivity to dynamic annealing compared to other point defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116391
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of ultrasound on the process of mass transfer in cement mortar and concrete (1976)
    Springer
    Journal of engineering physics and thermophysics 31 (1976), S. 1162-1168 
    Details
    ISSN: 1573-871X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We present new results in the investigation of the depth and rate of impregnation of cement mortar and concrete. We show the effect of ultrasound on the process of mass transfer in concrete. We establish the possibility of using ultrasound for accelerating the impregnation of concrete and also of other capillary-porous materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00861064
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  • 10
    Electronic Resource
    Electronic Resource
    Operating experience on IT9-2 and IT9-6 units [knock engines] equipped with DP-60 electronic detonation meters (1965)
    Springer
    Chemistry and technology of fuels and oils 1 (1965), S. 573-576 
    Details
    ISSN: 1573-8310
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00731406
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