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  • 1
    Electronic Resource
    Electronic Resource
    Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2635-2637 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched (Δa/a=0.09%) ScAlMgO4(0001) substrates were employed to grow single crystalline quality ZnO films by laser molecular-beam epitaxy. Extremely smooth surface represented by atomically flat terraces and half unit cell (0.26 nm) high steps and extremely small orientation fluctuations both in-plane (〈0.02°) and out-of-plane (〈0.01°) are achieved. The films have high mobility (∼100 cm2/V s) together with low residual carrier concentration (∼1015 cm−3). Excellent optical properties, including a clear doublet of A and B exciton peaks in absorption spectra, were also observed. These features could not be simultaneously achieved for ZnO films grown on sapphire(0001) having a large lattice mismatch (Δa/a=18%). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125102
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 824-826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have identified the surface polar structure of wurtzite-type ZnO films by coaxial impact-collision ion scattering spectroscopy. High-quality ZnO epitaxial films were prepared on sapphire (α-Al2O3) (0001) substrates by laser molecular beam epitaxy using a ZnO ceramic target. The (0001¯) crystallographic plane (the O face) was found to terminate the top surface of the ZnO film by comparing spectra of the films with those of well-defined (0001) and (0001¯) surfaces of bulk single crystals. The preferential [0001¯] growth direction of ZnO films is discussed from the viewpoints of the chemical interaction at the interface and surface stability against sublimation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120905
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  • 3
    Electronic Resource
    Electronic Resource
    MgxZn1−xO as a II–VI widegap semiconductor alloy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2466-2468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a widegap II–VI semiconductor alloy, MgxZn1−xO, for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO. The c-axis oriented MgxZn1−xO films were epitaxially grown by pulsed laser deposition on ZnO epitaxial films and sapphire (0001) substrates using ceramic targets. Solid solution films were prepared with Mg content up to x=0.33, achieving a band gap of 3.99 eV at room temperature. MgO impurity phase segregated at x≥0.36. Lattice constants of MgxZn1−xO films changed slightly (∼1%), increasing in a axis and decreasing in c-axis direction with increasing x. These films showed ultraviolet photoluminescence at energies from 3.36 (x=0) to 3.87 eV (x=0.33) at 4.2 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121384
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal stability of supersaturated MgxZn1−xO alloy films and MgxZn1−xO/ZnO heterointerfaces (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4088-4090 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the thermal stability of wurtzite-phase MgxZn1−xO alloy films and ZnO/MgxZn1−xO bilayer films with x exceeding the reported solubility limit of 0.04. When a Mg0.23Zn0.78O film was annealed, the segregation of MgO started at 850 °C and the band gap was reduced to the value of that for an x=0.15 film after annealing at 1000 °C. Mg0.15Zn0.85O films showed no change of the band gap even after annealing at 1000 °C. Therefore, we conclude that the thermodynamic solubility limit of MgO in MgxZn1−xO epitaxial film is about x=0.15. The thermal diffusion of Mg across the MgxZn1−xO/ZnO interface was observed only after annealing above 700 °C. Unlike other II–VI semiconductors, ZnO-based alloy films and heterointerfaces are stable enough for the fabrication of high-crystallinity heterostructures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125545
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  • 5
    Electronic Resource
    Electronic Resource
    An oxide-diluted magnetic semiconductor: Mn-doped ZnO (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3366-3368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn1−xMnxO films (x〈0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 1019 cm−3 can be doped into the Zn1−xMnxO films by Al doping, in contrast to low carrier density in the other II–VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125353
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  • 6
    Electronic Resource
    Electronic Resource
    Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 980-982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO/Mg0.2Zn0.8O superlattices with a band-gap offset of about 0.5 eV were epitaxially grown by laser molecular-beam epitaxy on a sapphire(0001) substrate using a ZnO buffer layer. The superlattice structure with a period ranging from 8 to 18 nm was clearly verified by cross-sectional transmission electron microscopy, Auger depth profile, and x-ray diffraction. As the well layer thickness decreased below 5 nm, the photoluminescence peak and absorption edge in the photoluminescence excitation spectra showed a blueshift, indicating a quantum-size effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124573
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  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature stimulated emission of excitons in ZnO/(Mg, Zn)O superlattices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2204-2206 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of stimulated emission in ZnO/MgxZn1−xO superlattices well above room temperature. Two kinds of superlattices grown by laser molecular-beam epitaxy showed clear systematics on the quantum subband levels in absorption and spontaneous emission spectra. Stimulated emission with excitonic origin could be observed at very low optical pumping levels. The threshold excitation intensity changed from 11 to 40 kW/cm2, and the emission energy could be tuned between 3.2 and 3.4 eV, depending on the well thickness and/or the Mg content in the barrier layers. The excitonic stimulated emission could be observed up to 373 K and the characteristic temperature was as high as 87 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315340
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  • 8
    Electronic Resource
    Electronic Resource
    Artificial charge-modulationin atomic-scale perovskite titanate superlattices (2002)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 419 (2002), S. 378-380 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The nature and length scales of charge screening in complex oxides are fundamental to a wide range of systems, spanning ceramic voltage-dependent resistors (varistors), oxide tunnel junctions and charge ordering in mixed-valence compounds. There are wide variations in the degree of charge ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature00977
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  • 9
    Electronic Resource
    Electronic Resource
    A high-mobility electron gas at the LaAlO 3 /SrTiO 3 heterointerface (2004)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 427 (2004), S. 423-426 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations. These discontinuities often arise in naturally layered ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02308
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  • 10
    Electronic Resource
    Electronic Resource
    Ultraviolet Excitonic Laser Action at Room Temperature in ZnO Nanocrystalline Epitaxial Films (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 264-268 (Feb. 1998), p. 1459-1462 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.264-268.1459.pdf
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