Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2635-2637
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Lattice-matched (Δa/a=0.09%) ScAlMgO4(0001) substrates were employed to grow single crystalline quality ZnO films by laser molecular-beam epitaxy. Extremely smooth surface represented by atomically flat terraces and half unit cell (0.26 nm) high steps and extremely small orientation fluctuations both in-plane (〈0.02°) and out-of-plane (〈0.01°) are achieved. The films have high mobility (∼100 cm2/V s) together with low residual carrier concentration (∼1015 cm−3). Excellent optical properties, including a clear doublet of A and B exciton peaks in absorption spectra, were also observed. These features could not be simultaneously achieved for ZnO films grown on sapphire(0001) having a large lattice mismatch (Δa/a=18%). © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125102
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