ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A metal-oxide-semiconductor (MOS) capacitor was fabricated using 4H-SiC epitaxiallayer, and the interface state was evaluated in oxygen and hydrogen ambient under high-temperatureconditions by the AC conductance technique. The relationships between interface state density (Dit),and corresponding time constant (tit) were obtained. Influences of oxide thickness and of gate metal(Pt or Al) were studied. Dit of Pt gate capacitor is influenced by ambient gas at higher temperature butDit of Al gate capacitor is little affected by ambient gas. Dit of capacitor with thicker oxide layer tendsto be lower than that of capacitor with thinner oxide layer. Interface states with larger time constantare decreased for hydrogen ambient comparing with oxygen ambient in the Pt gate capacitor
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.735.pdf
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